Selective deposition of metals, metal oxides, and dielectrics

Patent metadata

Field	Value
Publication number	US-10456808-B2
Application number	US-201815877632-A
Country	US
Kind code	B2
Filing date	Jan 23, 2018
Priority date	Feb 4, 2014
Publication date	Oct 29, 2019
Grant date	Oct 29, 2019

Abstract

Methods are provided for selectively depositing a material on a first surface of a substrate relative to a second, different surface of the substrate. The selectively deposited material can be, for example, a metal, metal oxide, or dielectric material.

First claim

We claim:

1. A method for selectively depositing a dielectric material on a dielectric surface of a substrate relative to a metal surface of the same substrate, the method comprising:
at least one deposition cycle comprising alternately and sequentially contacting the substrate with a precursor and a reactant, and
wherein the metal surface is treated to inhibit deposition of the dielectric material thereon prior to the at least one deposition cycle, and
wherein the dielectric material is selectively deposited on the dielectric surface relative to the metal surface with a selectivity of at least 80%.

2. The method of claim 1 , wherein the precursor comprises an aminosilane precursor and the reactant comprises ozone.

3. The method of claim 1 , wherein the precursor comprises Ge, Sb, Si or Mg.

4. The method of claim 3 , wherein the precursor comprises a Ge-alkylamine and the reactant is water.

5. The method of claim 3 , wherein the precursor comprises Mg(Cp) 2 and the reactant is selected from water, ozone and a combination of water and ozone.

6. The method of claim 1 , wherein the dielectric material is selected from GeO 2 , SiO 2 and MgO.

7. The method of claim 1 , wherein the dielectric surface comprises a low-k surface.

8. The method of claim 1 , wherein the metal surface comprises Cu.

9. The method of claim 1 , wherein the metal surface is oxidized prior to the at least one deposition cycle.

10. The method of claim 1 , wherein the dielectric material is selectively deposited on the dielectric surface relative to the metal surface with a selectivity of at least 90%.

11. The method of claim 1 , wherein the selectivity is retained for up to 20 deposition cycles.

12. A method for selectively depositing a metal on a first metal surface of a substrate relative to a second, different surface of the same substrate, the method comprising:
treating the second surface to provide OH, NH x , or SH x terminations; and
subsequently carrying out at least one deposition cycle comprising alternately and sequentially contacting the substrate with a metal precursor and a reactant,
wherein the metal is selectively deposited on the first surface relative to the second, different surface with a selectivity of at least 80%.

13. The method of claim 12 , wherein the metal is selected from Sb and Ge.

14. The method of claim 12 , wherein the first metal surface comprises Ni, Co, Cu, Al or Ru.

15. The method of claim 12 , wherein the second surface is a dielectric surface.

16. The method of claim 12 , wherein the metal precursor comprises a Sb reactant having the formula SbX 3 , where X is a halogen.

17. A method for selectively depositing a metal or metal oxide material on a first dielectric surface of a substrate relative to a second, different surface of the same substrate, the method comprising:
at least one deposition cycle comprising alternately and sequentially contacting the substrate with a precursor comprising a metal and a reactant, and
wherein the second different surface is treated to inhibit deposition of the metal or metal oxide material thereon prior to the at least one deposition cycle, and
wherein the metal or metal oxide material is selectively deposited on the first dielectric surface relative to the second, different surface with a selectivity of at least 90%.

18. The method of claim 17 , wherein the precursor comprises Ni, Fe or Co.

19. The method of claim 17 , wherein the metal or metal oxide is selected from Ni, Fe, Co, Ni oxide, Fe oxide and Co oxide.

20. The method of claim 17 , wherein the first dielectric surface comprises SiO 2 , GeO 2 or a low-k surface.

Assignees

• Asm Ip Holding Bv

Inventors

• Haukka Suvi P
• Matero Raija H
• Tois Eva
• Niskanen Antti
• Tuominen Marko
• Huotari Hannu
• Pore Viljami J
• Raaijmakers Ivo

Classifications

• C23C16/045

  Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates · CPC title

• C23C16/14

  Deposition of only one other metal element · CPC title

• C23C16/40

  Oxides · CPC title

• C23C18/1212

  Zeolites, glasses · CPC title

• C23C16/28

  Deposition of only one other non-metal element · CPC title