Apparatus and method for bonding substrates

Patent metadata

Field	Value
Publication number	US-10438798-B2
Application number	US-201815862678-A
Country	US
Kind code	B2
Filing date	Jan 5, 2018
Priority date	Sep 25, 2013
Publication date	Oct 8, 2019
Grant date	Oct 8, 2019

Abstract

A device and method is described for producing an electrically conductive direct bond between a bonding side of a first substrate and a bonding side of a second substrate. A workspace is included that can be closed, gas-tight, against the environment and can be supplied with a vacuum. The workspace includes a) at least one plasma chamber for modifying at least one of the bonding sides and at least one bonding chamber for bonding the bonding sides, and/or b) at least one combined bonding/plasma chamber for modifying at least one of the bonding sides and for bonding the bonding sides.

First claim

Having described the invention, the following is claimed:

1. A method for producing a direct bond between a bonding side of a first substrate and a bonding side of a second substrate in a workspace, the method comprising:
modifying at least one of the bonding sides of the first and second substrates in one of a plasma chamber and a bonding/plasma chamber, the modifying comprising:
changing a stoichiometry of an oxide layer on the at least one of the bonding sides of the first and second substrates;
introducing, into the one of the plasma chamber and the bonding/plasma chamber, one or more reducing gases selected from the group consisting of hydrogen, nitrogen oxide, carbon monoxide, and methane; and
mixing the one or more reducing gases with one or more inert gases selected from the group consisting of xenon, argon, helium, nitrogen, and carbon dioxide; and

subsequently bonding the bonding side of the first substrate with the bonding side of the second substrate in one of a bonding chamber corresponding with the plasma chamber or the bonding/plasma chamber, the bonding comprising closing nano-gaps between the bonding side of the first substrate and the bonding side of the second substrate by applying a high pressing force to the first and second substrates after the bonding side of the first substrate contacts the bonding side of the second substrate, the high pressing force being in a range from 1 kN to 320 kN.

2. The method according to claim 1 , wherein the modifying further comprises at least one of:
a) altering the oxide layer on the at least one of the bonding sides of the first and second substrates; and
b) at least partially removing part of the oxide layer from the at least one of the bonding sides of the first and second substrates.

3. The method according to claim 2 , wherein said part of the oxide layer is completely removed from the at least one of the bonding sides of the first and second substrates.

4. The method according to claim 1 , further comprising:
applying an ion energy of less than 1000 eV between an upper electrode and a lower electrode of the one of the plasma chamber and the bonding/plasma chamber to expose the first and second substrate to the ion energy.

5. The method according to claim 4 , wherein an AC voltage with a frequency greater than a frequency of an AC voltage applied to the lower electrode is supplied to the upper electrode.

6. The method according to claim 1 , wherein a pressure applied by the high pressing force is in a range from 0.01 MPa to 10 MPa.

7. The method according to claim 1 , wherein a pressure applied by the high pressing force is in a range from 0.1 MPa to 8 MPa.

8. The method according to claim 1 , wherein a pressure applied by the high pressing force is in a range from 1 MPa to 5 MPa.

9. The method according to claim 1 , wherein a pressure applied by the high pressing force is in a range from 1.5 MPa to 3 MPa.

10. A method for producing a direct bond between a bonding side of a first substrate and a bonding side of a second substrate in a workspace, the method comprising:
modifying at least one of the bonding sides of the first and second substrates in one of a plasma chamber and a bonding/plasma chamber, the modifying comprising:
changing a stoichiometry of an oxide layer on the at least one of the bonding sides of the first and second substrates;
introducing, into the one of the plasma chamber and the bonding/plasma chamber, one or more reducing gases selected from the group consisting of hydrogen, nitrogen oxide, carbon monoxide, and methane; and
mixing the one or more reducing gases with one or more inert gases selected from the group consisting of xenon, argon, helium, nitrogen, and carbon dioxide to form a gas mixture, the gas mixture having a concentration value between 100% of hydrogen and 0% of argon and 0% of hydrogen and 100% of argon, the gas mixture containing other gases in an amount less than or equal to 1%, the gas mixture containing less than 80% of hydrogen; and

subsequently bonding the bonding side of the first substrate with the bonding side of the second substrate in one of a bonding chamber corresponding with the plasma chamber or the bonding/plasma chamber, the bonding comprising closing nano-gaps between the bonding side of the first substrate and the bonding side of the second substrate by applying a high pressing force to the first and second substrates after the bonding side of the first substrate contacts the bonding side of the second substrate, the high pressing force being in a range from 1 kN to 320 kN.

11. The method according to claim 10 , wherein the gas mixture contains less than 60% of hydrogen.

12. The method according to claim 10 , wherein the gas mixture contains less than 40% of hydrogen.

13. The method according to claim 10 , wherein the gas mixture contains less than 20% of hydrogen.

14. A method for producing a direct bond between a bonding side of a first substrate and a bonding side of a second substrate in a workspace, the method comprising:
modifying at least one of the bonding sides of the first and second substrates in one of a plasma chamber and a bonding/plasma chamber, the bonding side of the first substrate and the bonding side of the second substrate being composed of conductive regions and nonconductive regions, the modifying comprising:
modifying an oxide layer by changing a stoichiometry of the oxide layer on the at least one of the bonding sides of the first and second substrates;
introducing, into the one of the plasma chamber and the bonding/plasma chamber, one or more reducing gases selected from the group consisting of hydrogen, nitrogen oxide, carbon monoxide, and methane; and
mixing the one or more reducing gases with one or more inert gases selected from the group consisting of xenon, argon, helium, nitrogen, and carbon dioxide; and

subsequently bonding the bonding side of the first substrate with the bonding side of the second substrate in one of a bonding chamber corresponding with the plasma chamber or the bonding/plasma chamber, the subsequent bonding being enhanced by the modified oxide layer to form a hybrid bond between the conductive regions and the nonconductive regions of the first and second substrates.

15. The method according to claim 14 , wherein the conductive regions are composed of metallic, and
wherein the nonconductive regions are composed of dielectric.

16. The method according to claim 15 , wherein the nonconductive regions surround the conductive regions.

17. The method according to claim 14 , wherein the conductive regions are composed of copper, and
wherein the nonconductive regions are composed of silicon oxide.

Assignees

• Ev Group E Thallner Gmbh

Inventors

• Wimplinger Markus
• Dragoi Viorel
• Flotgen Christoph

Classifications

• H10P72/0428

  Apparatus for mechanical treatment or grinding or cutting · CPC title

• H10P34/40

  with high-energy radiation · CPC title

• H10P10/128 Primary

  by direct semiconductor to semiconductor bonding · CPC title

• H10P90/1914 Primary

  using bonding · CPC title

• H01L21/187 Primary

  Electricity · mapped topic