Compound for forming organic film, composition for forming organic film, method for forming organic film, and patterning process

Patent metadata

Field	Value
Publication number	US-10429739-B2
Application number	US-201615359323-A
Country	US
Kind code	B2
Filing date	Nov 22, 2016
Priority date	Dec 24, 2015
Publication date	Oct 1, 2019
Grant date	Oct 1, 2019

Abstract

The present invention provides a compound for forming an organic film which has a minimum complex viscosity of 10 Pa·s or less when the complex viscosity is measured within a range of 50° C. to 300° C. This compound for forming an organic film can provide an organic film composition having high filling and planarizing properties.

First claim

The invention claimed is:

1. A compound for forming an organic film which has a minimum complex viscosity of 10 Pa·s or less when the complex viscosity is measured within a range of 50° C. to 300° C.,
wherein the compound is shown by the formula (1A),
R R 1 ) (m1+m2)   (1A)

wherein R represents a single bond, an organic group having 1 to 50 carbon atoms, an ether bond, a —SO— group, or a —SO 2 — group; R 1 represents a group shown by the formula (1B); and m1 and m2 represent an integer satisfying 1≤m1≤5, 1≤m2≤5, and 2≤m1+m2≤8,
—R 1 =—X 1 —X  (1B)

wherein X 1 represents a group shown by the formula (1C); and X represents a group shown by the formula (1D),

wherein (X) represents a bonding site to X,

wherein X 2 represents a divalent organic group having 1 to 10 carbon atoms; n1 represents 0 or 1; n2 represents 1 or 2; X 3 represents a group shown by the formula (1E); and n5 represents 0, 1, or 2,

wherein R 10 represents a hydrogen atom or a saturated or unsaturated hydrocarbon group having 1 to 10 carbon atoms, in which a hydrogen atom of the benzene ring in the formula (1E) may be substituted with a methyl group or methoxy group.

2. The compound for forming an organic film according to claim 1 , wherein the compound has a complex viscosity of 1,000 Pa·s or less at 100° C.

3. The compound for forming an organic film according to claim 1 , wherein the compound has a molecular weight of 2,500 or less.

4. A composition for forming an organic film, comprising the compound according to claim 1 and an organic solvent.

5. A composition for forming an organic film, comprising:
a compound for forming an organic film which has a minimum complex viscosity of 10 Pa·s or less when the complex viscosity is measured within a range of 50° C. to 300° C.;
an organic solvent; and
either or both of a compound shown by the formula (2A) and a compound shown by the formula (3A),
R R 2 ) (m3+m4)   (2A)

wherein R represents a single bond, an organic group having 1 to 50 carbon atoms, an ether bond, a —SO— group, or a —SO 2 — group; R 2 represents a group shown by the formula (2B); and m3 and m4 represent an integer satisfying 1≤m3≤5, 1≤m4≤5, and 2≤m3+m4≤8,
—R 2 =—X 11 —X′  (2B)

wherein X 11 represents a group shown by the formula (2C); and X′ represents a group shown by the formula (2D),

wherein (X′) represents a bonding site to X′,

wherein n3 represents 0 or 1; n4 represents 1 or 2; X 4 represents a group shown by the formula (2E); and n6 represents 0, 1, or 2,

wherein R 11 represents a hydrogen atom or a saturated or unsaturated hydrocarbon group having 1 to 10 carbon atoms, in which a hydrogen atom of the benzene ring in the formula (2E) may be substituted with a methyl group or methoxy group,

wherein R 101 , R 102 , R 103 , and R 104 independently represent a hydroxyl group; m100 represents 1, 2, or 3; R 100 represents a hydrogen atom or a hydroxyl group when m100 is 1, R 100 represents a single bond or a group shown by the formula (3B) when m100 is 2, and R 100 represents a group shown by the formula (3C) when m100 is 3; a hydrogen atom of the aromatic ring in the formula (3A) may be substituted with a methyl group or a methoxy group; m101 represents 0 or 1, m102 represents 1 or 2; m103 represents 0 or 1; m104 represents 1 or 2; m105 represents 0 or 1; when m101 is 0, n101 and n102 represent an integer satisfying 0≤n101≤3, 0≤n102≤3, and 1≤n101+n102≤4, and when m101 is 1, n101, n102, n103, and n104 represent an integer satisfying 0≤n101≤2, 0≤n102≤2, 0≤n103≤2, 0≤n104≤2, and 2≤n101+n102+n103+n104≤8,

wherein * represents a bonding site; R 106 and R 107 represent a hydrogen atom or an organic group having 1 to 24 carbon atoms and no ester bond, and R 106 and R 107 may be bonded to form a cyclic structure,

wherein * represents a bonding site; and R 108 represents a hydrogen atom or an organic group having 1 to 15 carbon atoms.

6. A composition for forming an organic film, comprising:
a compound for forming an organic film which has a minimum complex viscosity of 10 Pa·s or less when the complex viscosity is measured within a range of 50° C. to 300° C.; and
an organic solvent that is a mixture of one or more organic solvents having a boiling point of lower than 180° C. and one or more organic solvents having a boiling point of 180° C. or higher.

7. A method for forming an organic film that functions as an organic planarizing film used in a semiconductor apparatus manufacturing process, the method comprising: applying the composition for forming an organic film according to claim 4 on a substrate to be processed by spin coating; and heating the substrate, on which the composition has been applied, at 100° C. to 600° C. for 10 to 600 seconds to form a cured film.

8. The method for forming an organic film according to claim 7 , wherein the substrate to be processed has steps or a structure with a height of 30 nm or more.

9. A method for forming an organic film that functions as an organic planarizing film used in a semiconductor apparatus manufacturing process, the method comprising: applying the composition for forming an organic film according to claim 4 on a substrate to be processed by spin coating; and heating the substrate, on which the composition has been applied, under an atmosphere having an oxygen concentration of 0.1% to 21% to form a cured film.

10. A patterning process comprising: forming an organic film on a body to be processed from the composition for forming an organic film according to claim 4 ; forming a resist underlayer film on the organic film from a resist underlayer film composition containing a silicon atom; forming a resist upper layer film on the resist underlayer film from a resist upper layer film composition composed of a photoresist composition; forming a circuit pattern in the resist upper layer film; transferring the pattern to the resist underlayer film by etching using the resist upper layer film having the formed circuit pattern as a mask; transferring the pattern to the organic film by etching using the resist underlayer film having the transferred pattern as a mask; and further transferring the pattern to the body to be processed by etching using the organic film having the transferred pattern as a mask.

11. The patterning process according to claim 10 , the circuit pattern is formed by a photolithography with a wavelength ranging from 10 nm to 300 nm, a direct drawing with electron beam, a nanoimprinting, or a combination thereof.

12. The patterning process according to claim 10 , the circuit pattern is developed by alkaline development or development with an organic solvent.

13. The patterning process a

Assignees

• Shinetsu Chemical Co

Inventors

• Kori Daisuke
• Ogihara Tsutomu
• Watanabe Takeru
• Taneda Yoshinori
• Kikuchi Rie

Classifications

• H10P95/06

  Planarisation of inorganic insulating materials · CPC title

• H10P76/2043

  using an anti-reflective coating · CPC title

• H10P76/2041

  Photolithographic processes · CPC title

• H10P76/405

  characterised by their composition, e.g. multilayer masks · CPC title

• H10P14/6342

  Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating · CPC title