Substrate processing method and template

Patent metadata

Field	Value
Publication number	US-10428438-B2
Application number	US-201414892236-A
Country	US
Kind code	B2
Filing date	May 12, 2014
Priority date	May 20, 2013
Publication date	Oct 1, 2019
Grant date	Oct 1, 2019

Abstract

A substrate processing method of performing a predetermined processing by supplying a processing liquid to a processing region of a substrate and using processing target ions in the processing liquid, includes: arranging a template to face the substrate, the template including a passage configured to distribute the processing liquid, a direct electrode, and an indirect electrode, and the substrate including a counter electrode, which matches with the direct electrode, installed in the processing region; supplying the processing liquid to the processing region through the passage; and performing the predetermined processing on the substrate by applying a voltage to the indirect electrode to cause the processing target ions to migrate to the counter electrode side while applying a voltage between the direct electrode and the counter electrode to oxidize or reduce the processing target ions that have migrated to the counter electrode side.

First claim

What is claimed is:

1. A substrate processing method of performing a predetermined processing on a processing region of a substrate, the method comprising:
providing a template comprising:
a template body configured to face the processing region of the substrate;
a passage formed in the template body and configured to distribute a processing liquid to the processing region of the substrate, the passage including a surface which defines the passage;
a first insulating material provided either on the surface of the passage or within the passage;
a first indirect electrode to which a first voltage from a power source connected between the first indirect electrode and a counter electrode that is provided in the processing region of the substrate is applied in order to cause processing target ions included in the processing liquid to migrate to the counter electrode, wherein the first indirect electrode is disposed on the first insulating material such that the first insulating material covers the first indirect electrode and the first indirect electrode does not come into contact with the processing liquid flowing through the passage; and
a direct electrode connected to the counter electrode through the power source, and to which the first voltage from the power source is applied in order to cause the processing target ions that have migrated to the counter electrode to be oxidized or reduced, wherein the direct electrode is provided on the surface of the passage above the first insulating material and the first indirect electrode or provided on the first insulating material within the passage,
arranging the template to face the substrate;
supplying the processing liquid to the processing region through the passage;
applying the first voltage from the power source to the first indirect electrode in order to cause the processing target ions to migrate to the counter electrode; and
applying the first voltage from the power source to the direct electrode in order to cause the processing target ions that have migrated to the counter electrode to be oxidized or reduced.

2. The substrate processing method of claim 1 , wherein the passage is formed to extend in a thickness direction of the template and through the template.

3. The substrate processing method of claim 2 , wherein
the applying the first voltage to the direct electrode is terminated when the processing liquid in the passage is positioned at a height which is not in contact with the direct electrode.

4. The substrate processing method of claim 1 , wherein the template includes a second indirect electrode disposed on a second insulating material which is provided on the surface of the passage below the first insulating material, and the second indirect electrode has a polarity different from that of the indirect electrode, and
the applying the first voltage to the first indirect electrode includes applying a second voltage to the second indirect electrode.

5. The substrate processing method of claim 1 , wherein the substrate includes a second indirect electrode disposed on a second insulating material which is provided on the surface of the passage below the first insulating material within the substrate, and the second indirect electrode has a polarity different from that of the indirect electrode, and
the applying the first voltage to the first indirect electrode includes applying a second voltage to the second indirect electrode.

6. The substrate processing method of claim 1 , wherein the first indirect electrode is stacked on the direct electrode via the first insulating material within the passage.

7. The substrate processing method of claim 6 , wherein a surface of the direct electrode is exposed to the inside of the passage,
the direct electrode includes a plurality of first planar fins which are arranged in parallel on the surface, and
the first indirect electrode includes a plurality of second planar fins, each of which is arranged inside the first fin.

8. The substrate processing method of claim 6 , wherein the direct electrode is provided within the passage, and
the first insulating material and the first indirect electrode are provided within the direct electrode.

9. The substrate processing method of claim 6 , wherein the indirect electrode, the first insulating material and the direct electrode are stacked in sequence inside of the passage, with at least part of the first indirect electrode above the first insulating material and at least part of the first insulating material above the direct electrode.

10. The substrate processing method of claim 6 , wherein a bottom portion of the direct electrode is provided facing the counter electrode, and
a central portion of the bottom portion of the counter electrode protrudes in an upper direction.

11. The substrate processing method of claim 6 , wherein the passage includes an injection hole configured to inject the processing liquid and a discharge hole configured to discharge the processing liquid, and
the direct electrode, the first insulating material, and the first indirect electrode are provided between the injection hole and the discharge hole.

12. The substrate processing method of claim 6 , wherein a bottom portion of the direct electrode is provided facing the counter electrode, and
a contact electrode, which is different from the direct electrode, is provided on the bottom portion of the direct electrode to protrude toward the counter electrode provided in the processing region of the substrate.

13. The substrate processing method of claim 1 , wherein a DC voltage is continuously applied to the first indirect electrode in the applying the first voltage to the first indirect electrode, and a pulse voltage is applied to the direct electrode in the applying the first voltage to the direct electrode.

14. The substrate processing method of claim 1 , wherein the template includes a monitor electrode that is provided on the surface of the passage below the first insulating material and the first indirect electrode, and configured to inspect a predetermined processing state, and
in the applying the first voltage to the first indirect electrode and the applying the first voltage to the direct electrode, a current value of a current flowing between the counter electrode and the monitor electrode is measured, and the processing state is inspected by a change of the measured current value.

15. A template for use in performing a predetermined processing on a processing region of a substrate, the template comprising:
a template body configured to face the processing region of the substrate;
a passage formed in the template body and configured to distribute a processing liquid to the processing region of the substrate, the passage including a surface which defines the passage;
a first insulating material provided either on the surface of the passage or within the passage;
a first indirect electrode to which a first voltage from a power source connected between the first indirect electrode and a counter electrode that is provided in the processing region of the substrate is applied in order to cause processing target ions included in the processing liquid to migrate to the counter electrode, wherein the first indirect electrode is disposed on the first insulating material such that the first insulating material covers the first indirect electrode and the first indirect electrode does not come into contact with the processing liquid flowing through the passage; and
a direct electrode connected to the counter electrode through the power source, and to which the first voltage from the powe

Assignees

• Tokyo Electron Ltd

Inventors

• Iwatsu Haruo
• Hoshino Tomohisa
• Matsumoto Toshiyuki

Classifications

• H10P14/47

  Electrolytic deposition, i.e. electroplating; Electroless plating · CPC title

• H10W20/023

  the interconnections being through-semiconductor vias · CPC title

• H10W20/0261

  characterised by the filling method or the material of the conductive fill · CPC title

• C25D17/008

  Current shielding devices · CPC title

• C25D17/001 Primary

  Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells · CPC title