Silicon carbide ingot and method for manufacturing silicon carbide substrate

Patent metadata

Field	Value
Publication number	US-10427324-B2
Application number	US-201415027059-A
Country	US
Kind code	B2
Filing date	Oct 14, 2014
Priority date	Nov 20, 2013
Publication date	Oct 1, 2019
Grant date	Oct 1, 2019

Abstract

A silicon carbide ingot includes an end surface and an end surface opposite to the end surface. In the silicon carbide ingot, the end surface and the end surface face each other in a growth direction, and a gradient of a nitrogen concentration in the growth direction is not less than 1×1016 cm−4 and not more than 1×1018 cm−4.

First claim

The invention claimed is:

1. A silicon carbide ingot comprising a first end surface and a second end surface opposite to the first end surface,
the first end surface and the second end surface facing each other in a growth direction, the growth direction extending from the first end surface to the second end surface, a gradient of a nitrogen concentration in the growth direction being not less than 1×10 16 cm −4 and not more than 1×10 18 cm −4 ,
the first end surface being a (0001) plane, the second end surface being a (000-1) plane, the nitrogen concentration increasing along the growth direction from the first end surface to the second end surface.

2. The silicon carbide ingot according to claim 1 , wherein the silicon carbide ingot has a width of not less than 100 mm when viewed in the growth direction.

3. The silicon carbide ingot according to claim 1 , wherein the nitrogen concentration is changed monotonously in the growth direction.

4. The silicon carbide ingot according to claim 1 , wherein the gradient of the nitrogen concentration in the growth direction linearly increases from the first end surface toward the second end surface.

5. A method for manufacturing a silicon carbide substrate comprising steps of:
preparing the silicon carbide ingot recited in claim 1 ; and
obtaining a silicon carbide substrate by cutting the silicon carbide ingot.

6. The method for manufacturing the silicon carbide substrate according to claim 5 , wherein in the step of obtaining the silicon carbide substrate, the silicon carbide ingot is cut by causing a wire to travel in contact with the silicon carbide ingot at a plurality of cut portions lined up in the growth direction, the wire having a surface to which an abrasive grain is fixed.

7. The method for manufacturing the silicon carbide substrate according to claim 6 , wherein
the nitrogen concentration in a portion of the silicon carbide ingot at the second end surface side is higher than the nitrogen concentration in a portion of the silicon carbide ingot at the first end surface side, and
a second cut portion located at the second end surface side among the plurality of cut portions is brought into contact with a portion of the wire at a downstream side in the travel direction as compared with a first cut portion located at the first end surface side among the plurality of cut portions.

8. The method for manufacturing the silicon carbide substrate according to claim 6 , wherein the abrasive grain includes a diamond abrasive grain.

9. The method for manufacturing the silicon carbide substrate according to claim 5 , wherein in the step of obtaining the silicon carbide substrate, the silicon carbide ingot is cut to provide the silicon carbide substrate with a thickness of not more than 1 mm.

Assignees

• Sumitomo Electric Industries

Inventors

• Hori Tsutomu
• Sasaki Makoto
• Honke Tsubasa
• Kawase Tomohiro

Classifications

• B24B27/0633

  using a cutting wire · CPC title

• C30B33/00

  After-treatment of single crystals or homogeneous polycrystalline material with defined structure (C30B31/00 takes precedence) · CPC title

• C30B29/36

  Carbides · CPC title

• C30B23/02

  Epitaxial-layer growth · CPC title

• C30B23/025

  characterised by the substrate · CPC title