Semiconductor laser diode

Patent metadata

Field	Value
Publication number	US-10424898-B2
Application number	US-201615774417-A
Country	US
Kind code	B2
Filing date	Nov 8, 2016
Priority date	Nov 9, 2015
Publication date	Sep 24, 2019
Grant date	Sep 24, 2019

Abstract

A semiconductor laser diode includes a layer sequence including a plurality of layers arranged one above another in a growth direction, wherein the semiconductor laser diode includes a first facet and a second facet between which a resonator extending in a longitudinal direction is formed, the layer sequence includes an active layer in which an active region is formed, the layer sequence includes waveguide layers, and the layer sequence includes a stressed layer arranged above the active layer in the growth direction, the stressed layer being provided for influencing a refractive index profile in the waveguide layers at least to partly compensate for an inhomogeneous variation of a refractive index in the waveguide layers, the inhomogeneous variation being brought about by an inhomogeneous temperature distribution during operation of the semiconductor laser diode.

First claim

The invention claimed is:

1. A semiconductor laser diode comprising a layer sequence comprising a plurality of layers arranged one above another in a growth direction,
wherein the semiconductor laser diode comprises a first facet and a second facet between which a resonator extending in a longitudinal direction is formed,
the layer sequence comprises an active layer in which an active region is formed,
the layer sequence comprises waveguide layers, and
the layer sequence comprises a stressed layer arranged above the active layer in the growth direction, said stressed layer being provided for influencing a refractive index profile in the waveguide layers at least to partly compensate for an inhomogeneous variation of a refractive index in the waveguide layers, said inhomogeneous variation being brought about by an inhomogeneous temperature distribution during operation of the semiconductor laser diode,
wherein the stressed layer is compressively stressed, and
the stressed layer comprises a cutout arranged above the active region in the growth direction.

2. The semiconductor laser diode according to claim 1 , wherein the stressed layer is structured in a lateral plane perpendicular to the growth direction.

3. The semiconductor laser diode according to claim 2 , wherein the stressed layer is centered above the active region in a transverse direction perpendicular to the growth direction and the longitudinal direction.

4. The semiconductor laser diode according to claim 2 , wherein the stressed layer is formed symmetrically with respect to an axis of symmetry parallel to the longitudinal direction.

5. The semiconductor laser diode according to claim 1 , wherein the stressed layer is tensile-stressed.

6. The semiconductor laser diode according to claim 5 , wherein the stressed layer comprises, in a transverse direction perpendicular to the growth direction and the longitudinal direction, a width that changes in the longitudinal direction.

7. The semiconductor laser diode according to claim 6 , wherein the width of the stressed layer increases in the direction toward the coupling-out facet.

8. The semiconductor laser diode according to claim 1 , wherein the cutout comprises, in a transverse direction perpendicular to the growth direction and the longitudinal direction, a width that changes in the longitudinal direction.

9. The semiconductor laser diode according to claim 8 , wherein the width of the cutout increases in the direction toward the coupling-out facet.

10. The semiconductor laser diode according to claim 1 , wherein a thickness of the stressed layer as measured in the growth direction changes in the longitudinal direction.

11. The semiconductor laser diode according to claim 1 , wherein the stressed layer extends in the longitudinal direction as far as the first facet and/or as far as the second facet.

12. The semiconductor laser diode according to claim 1 , wherein the stressed layer extends in the longitudinal direction not as far as the first facet and/or not as far as the second facet.

13. The semiconductor laser diode according to claim 1 , wherein the stressed layer is arranged above a metallization layer in the growth direction.

14. The semiconductor laser diode according to claim 1 , wherein a metallization layer is arranged above the stressed layer in the growth direction.

15. The semiconductor laser diode according to claim 1 , wherein the stressed layer comprises an electrically conductive material.

16. A semiconductor laser diode, comprising a layer sequence comprising a plurality of layers arranged one above another in a growth direction,
wherein the semiconductor laser diode comprises a first facet and a second facet between which a resonator extending in a longitudinal direction is formed,
the layer sequence comprises an active layer in which an active region is formed,
the layer sequence comprises waveguide layers, and
the layer sequence comprises a stressed layer arranged above the active layer in the growth direction, said stressed layer being provided for influencing a refractive index profile in the waveguide layers at least to partly compensate for an inhomogeneous variation of a refractive index in the waveguide layers, said inhomogeneous variation being brought about by an inhomogeneous temperature distribution during operation of the semiconductor laser diode,
wherein the stressed layer is arranged above a metallization layer in the growth direction.

17. A semiconductor laser diode comprising a layer sequence comprising a plurality of layers arranged one above another in a growth direction,
wherein the semiconductor laser diode comprises a first facet and a second facet between which a resonator extending in a longitudinal direction is formed,
the layer sequence comprises an active layer in which an active region is formed,
the layer sequence comprises waveguide layers, and
the layer sequence comprises a stressed layer arranged above the active layer in the growth direction, said stressed layer being provided for influencing a refractive index profile in the waveguide layers at least to partly compensate for an inhomogeneous variation of a refractive index in the waveguide layers, said inhomogeneous variation being brought about by an inhomogeneous temperature distribution during operation of the semiconductor laser diode,
wherein a metallization layer is arranged above the stressed layer in the growth direction.

Assignees

• Osram Opto Semiconductors Gmbh

Inventors

• Bachmann Alexander
• Lauer Christian
• Furitsch Michael

Classifications

• H01S5/04254

  characterised by the shape · CPC title

• H01S5/04252

  characterised by the material · CPC title

• H01S5/3201

  incorporating bulkstrain effects, e.g. strain compensation, strain related to polarisation · CPC title

• H01S2301/18

  Semiconductor lasers with special structural design for influencing the near- or far-field · CPC title

• H01S5/22

  having a ridge or stripe structure · CPC title