Methods for making a superconducting device with at least one enclosure

Patent metadata

Field	Value
Publication number	US-10424712-B2
Application number	US-201414761914-A
Country	US
Kind code	B2
Filing date	Jan 17, 2014
Priority date	Jan 18, 2013
Publication date	Sep 24, 2019
Grant date	Sep 24, 2019

Abstract

Some embodiments are directed to a device including multiple substrates comprising one or more troughs. The substrates are disposed such that the one or more troughs form at least one enclosure. At least one superconducting layer covers at least a portion of the at least one enclosure. Other embodiments are directed to a method for manufacturing a superconducting device. The method includes acts of forming at least one trough in at least a first substrate; covering at least a portion of the first substrate with a superconducting material; covering at least a portion of a second substrate with the superconducting material; and bonding the first substrate and the second substrate to form at least one enclosure comprising the at least one trough and the superconducting material.

First claim

What is claimed is:

1. A method for manufacturing a superconducting device, the method comprising acts of:
forming at least one trough in at least a first substrate;
covering at least a portion of the first substrate with a superconducting material;
covering at least a portion of a second substrate with the superconducting material; and
bonding the first substrate and the second substrate to form at least one enclosure comprising the at least one trough and the superconducting material such that the portion of the first substrate covered with the superconducting material is opposed to, and displaced from, the portion of the second substrate covered with the superconducting material;
forming channels in at least one wiring layer substrate;
covering at least a portion of the channels with the superconducting material to form a wiring layer; and
bonding the at least one wiring layer substrate to the first substrate and/or the second substrate.

2. The method of claim 1 , wherein the act of forming the at least one trough comprises acts of:
forming a mask layer that covers a portion of the first substrate; and
etching a portion of the first substrate not covered by the mask layer.

3. The method of claim 2 , wherein the act of etching comprises an act of anisotropic etching.

4. The method of claim 3 , wherein the act of anisotropic etching uses a wet etchant.

5. The method of claim 2 , wherein the mask layer comprises silicon nitride.

6. The method of claim 1 , wherein the act of forming at least one trough in at least a first substrate comprises:
forming a first trough in the first substrate; and
forming a second trough in the second substrate, wherein the at least one enclosure comprises a first enclosure formed from the first trough and the second trough.

7. The method of claim 6 , wherein the at least one enclosure is configured to form at least one electromagnetic shield such that external electromagnetic radiation is prevented from entering the at least one enclosure.

8. The method of claim 7 , further comprising:
forming at least one superconducting component within the first enclosure.

9. The method of claim 8 , wherein the at least one superconducting component comprises at least one superconducting circuit.

10. The method of claim 8 , wherein the at least one superconducting component comprises at least one qubit.

11. The method of claim 10 , further comprising:
covering at least a portion of said second substrate with a support layer, wherein the at least one qubit is disposed on and/or within the support layer.

12. The method of claim 10 , wherein the at least one superconducting component comprises at least one stripline resonator.

13. The method of claim 12 , wherein the act of forming at least one trough in at least a first substrate further comprises forming a third trough in a third substrate, the method further comprising:
covering at least a portion of the third substrate with the superconducting material;
covering at least a portion of a fourth substrate with the superconducting material;
bonding the third substrate and the fourth substrate to form a memory layer comprising a second enclosure from the third trough; and
bonding the memory layer to the at least one wiring layer substrate.

14. The method of claim 13 , wherein:
the wiring layer couples the second enclosure to the first enclosure.

15. The method of claim 14 , wherein:
the first enclosure is electrically connected to the wiring layer.

16. The method of claim 13 , wherein:
a Q factor of the second enclosure is greater than a Q factor of the first enclosure.

17. The method of claim 1 , further comprising:
coupling at least one qubit to the at least one enclosure.

18. The method of claim 17 , wherein coupling the at least one qubit to the at least one enclosure comprises forming the at least one qubit within the at least one enclosure.

19. The method of claim 17 , wherein the at least one qubit is a transmon qubit.

20. The method of claim 17 , wherein the at least one qubit is a fluxonium qubit.

21. The method of claim 1 , wherein the act of covering at least a portion of the first substrate with a superconducting material comprises acts of:
forming a seed layer on at least the portion of the first substrate; and
electroplating the superconducting material onto the seed layer.

22. The method of claim 1 , wherein the superconducting material is selected from the group consisting of aluminum, niobium, indium, rhenium, tantalum, titanium nitride, and niobium nitride.

23. The method of claim 1 , wherein at least one of the first substrate and the second substrate comprises a semiconductor.

24. The method of claim 1 , wherein the at least one enclosure is configured to form at least one three-dimensional cavity resonator such that electromagnetic radiation at one or more frequencies resonates within the at least one three-dimensional cavity resonator.

25. The method of claim 1 , wherein the portion of the first substrate is oriented parallel to the portion of the second substrate.

Assignees

• Univ Yale

Inventors

• Schoelkopf Iii Robert J
• Frunzio Luigi
• Devoret Michel
• Brecht Teresa

Classifications

• Y10T29/49016

  Antenna or wave energy "plumbing" making · CPC title

• H01L39/2406

  Electricity · mapped topic

• H01L39/045

  Electricity · mapped topic

• H01L27/18

  Electricity · mapped topic

• H01L39/24 Primary

  Electricity · mapped topic