Correction for flare effects in lithography system

Patent metadata

Field	Value
Publication number	US-10423745-B2
Application number	US-201414537441-A
Country	US
Kind code	B2
Filing date	Nov 10, 2014
Priority date	Sep 14, 2010
Publication date	Sep 24, 2019
Grant date	Sep 24, 2019

Abstract

A method for reducing an effect of flare produced by a lithographic apparatus for imaging a design layout onto a substrate is described. A flare map in an exposure field of the lithographic apparatus is simulated by mathematically combining a density map of the design layout at the exposure field with a point spread function (PSF), wherein system-specific effects on the flare map may be incorporated in the simulation. Location-dependent flare corrections for the design layout are calculated by using the determined flare map, thereby reducing the effect of flare.

First claim

The invention claimed is:

1. A method for reducing an effect of flare produced by a lithographic system when imaging a pattern onto a substrate, the method comprising:
simulating, by a hardware computer, a flare map in an exposure field of the lithographic system by mathematically combining a density map of a pattern at the exposure field with a point spread function (PSF), wherein the PSF is anisotropic in two orthogonal directions and the anisotropy of the PSF further varies from one location in the exposure field to another location in the exposure field; and
producing electronic data based on the flare map to enable a correction of one or more features in the pattern,
where the electronic data, or information derived therefrom, is for configuring the lithographic system, for configuring a manufacturing process involving the lithographic system, for configuring a patterning device to be used in the lithographic system, and/or for configuring manufacture of a patterning device to be used in the lithographic system.

2. The method of claim 1 , further comprising performing a first level flare correction on a layout of at least part of the pattern, wherein the density map is based on the corrected layout.

3. The method of claim 2 , wherein performing the first level flare correction includes using a reference flare correction and an optical enhancement features (OEF) output for the pattern.

4. The method of claim 3 , further comprising:
updating a post-OEF layout with a location-dependent flare correction to create an improved post-OEF flare-corrected layout; and
using the improved post-OEF flare-corrected layout to improve an accuracy of a computational lithography model for the lithographic system.

5. The method of claim 1 , further comprising obtaining a location database having information about a location of each pattern of a plurality of patterns within the exposure field, wherein the density map is created using the location database.

6. The method of claim 1 , further comprising, before mathematically combining the density map with the PSF, adjusting the PSF to account for a system-specific effect on flare due to an identified characteristic of the lithographic system, such that the system-specific effect on the flare map is incorporated in the simulation.

7. The method of claim 6 , wherein the system-specific effect includes one or more selected from: a flare effect due to reflection from a black border of a mask, a flare effect due to reflection from one or more reticle-masking blades defining an exposure slit, a flare effect due to overscan, a flare effect due to a reflection from a gas-lock sub-aperture of a dynamic gas lock (DGL) mechanism, and/or a flare effect within a specific exposure field due to contribution from an other neighbouring exposure field.

8. The method of claim 6 , wherein the adjusted PSF is expressed in a fractal form in the frequency domain, or in a tabulated form in the spatial domain, relating PSF values with corresponding discrete distances.

9. The method of claim 1 , further comprising calculating a location-dependent flare correction for the pattern by using the determined flare map, thereby reducing the effect of flare.

10. The method of claim 9 , wherein the calculating the location-dependent correction comprises:
creating a reference image of the pattern with a zero-flare or a known reference-flare condition; and
comparing the determined flare map with the reference image to calculate the location-dependent flare correction.

11. The method of claim 10 , wherein the reference image is an aerial image or a density map of the pattern at the exposure field using a relatively fine grid.

12. The method of claim 1 , wherein a direction of anisotropy of the PSF varies according to one or more selected from: a flare effect due to a reflection from black border of a mask, a flare effect due to reflection from one or more reticle-masking blades defining an exposure slit, a flare effect due to overscan, a flare effect due to a reflection from a gas-lock sub-aperture of a dynamic gas lock (DGL) mechanism, and/or a flare effect within a specific exposure field due to contribution from an other neighbouring exposure field.

13. The method of claim 1 , further comprising using a relatively coarse grid to approximate the density map at the exposure field to determine the flare map.

14. The method of claim 1 , wherein the imaging involves imaging the pattern using a radiation beam in the lithographic system that has an extreme ultra-violet (EUV) wavelength and the radiation beam is projected using reflective optics.

15. The method of claim 1 , further comprising compensating for shadowing effects at the exposure field.

16. The method of claim 15 , further comprising calculating and applying a mask proximity correction (MPC) to a design layout after an optical enhancement features (OEF), flare and shadow correction.

17. The method of claim 1 , wherein the pattern comprises a repetition of another pattern and the other pattern consists essentially of a single chip.

18. The method of claim 1 , wherein within the exposure field, a direction in which the PSF anisotropically varies changes from one location in the exposure field to another location of the exposure field, such that in a first location of the exposure field, the PSF varies anisotropically in a first direction and, in a second location of the exposure field, the PSF varies anisotropically in a second direction different from the first direction.

19. The method of claim 1 , wherein a tail portion of the PSF is approximated with a substantially fixed flare level dependent, at least in part, on a saturated pattern density.

20. The method of claim 1 , further comprising generating one or more files corresponding to a modified pattern, wherein the modified pattern is the pattern modified, based on the electronic data, such that it reduces an effect of flare.

21. A computer program product comprising a non-transitory computer-readable medium having instructions recorded therein, the instructions, when executed by a computer system, configured to cause the computer system to at least:
simulate a flare map in an exposure field of a lithographic system by mathematically combining a density map of a pattern at the exposure field with a point spread function (PSF), wherein the PSF is anisotropic in two orthogonal directions and the anisotropy of the PSF further varies from one location in the exposure field to another location in the exposure field; and
produce electronic data based on the flare map to enable a correction of one or more features in the pattern,
where the electronic data, or information derived therefrom, is for configuring the lithographic system, for configuring a manufacturing process involving the lithographic system, for configuring a patterning device to be used in the lithographic system, and/or for configuring manufacture of a patterning device to be used in the lithographic system.

22. The computer program product of claim 21 , wherein the instructions are further configured to cause the computer system to generate one or more files corresponding to a modified pattern, wherein the modified pattern is the pattern modified, based on the electronic data, such that it reduces an effect of flare.

23. The computer program product of claim 21 , wherein within the exposure field, a direction in which the PSF anisotropically varies changes from one location in the exposure f

Assignees

• Asml Netherlands Bv

Inventors

• Liu Hua-Yu
• Li Jiangwei
• Chen Luoqi
• Liu Wei
• Jiang Jiong

Classifications

• G03F7/70941

  Stray fields and charges, e.g. stray light, scattered light, flare, transmission loss · CPC title

• G03F7/705 Primary

  Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions · CPC title

• G06F17/5045 Primary

  Physics · mapped topic

• G06F17/5009

  Physics · mapped topic

• G06F30/20

  Design optimisation, verification or simulation (optimisation, verification or simulation of circuit designs G06F30/30) · CPC title