Power module and power circuit

Patent metadata

Field	Value
Publication number	US-10418895-B2
Application number	US-201715496651-A
Country	US
Kind code	B2
Filing date	Apr 25, 2017
Priority date	Oct 30, 2014
Publication date	Sep 17, 2019
Grant date	Sep 17, 2019

Abstract

A power module includes: a bridge unit including a bridge circuit composed including a plurality of SiC-MOSFETs Q1 and Q2 and an internal capacitor C1 connected so as to extend over between both ends of the bridge circuit; power terminals P and N of which one ends are respectively connected to both ends of the bridge unit and other ends are respectively exposed to the outside; and a snubber circuit (RB, CB) connected so as to extend over between an exposed side of the positive-side power terminal P and an exposed side of the negative-side power terminal N. A power circuit comprising the power module, and a smoothing capacitor C2 connected in parallel to the snubber circuit. There can be provided the power module and the power circuit which can simultaneously realize the low parasitic inductance and the low noise.

First claim

What is claimed is:

1. A power module comprising:
a bridge unit comprising a bridge circuit composed including a plurality of transistor elements and an internal capacitor connected so as to extend over between both ends of the bridge circuit;
a positive-side power terminal and a negative-side power terminal of which one ends are respectively connected to both ends of the bridge unit and other ends are respectively exposed to an outside from a sealing unit for sealing the bridge unit; and
a snubber circuit connected so as to extend over between an exposed side of the positive-side power terminal and an exposed side of the negative-side power terminal,
wherein each of the positive-side power terminal and the negative-side power terminal is a flat metallic plate,
the power module further comprises:
a first metallic plate extending from the snubber circuit and connected to the positive-side power terminal, and
a second metallic plate extending from the snubber circuit and connected to the negative side power terminal,

the snubber circuit comprises a snubber circuit substrate, a snubber resistor, and a snubber capacitor,
a value of the snubber resistor is a resistance value by which peak values of currents conducted to the positive side power terminal and the negative side power terminal can be substantially minimized, and
the snubber circuit is disposed outside a connection region between the first metallic plate and the positive-side power terminal, and outside a connection region between the second metallic plate and the negative-side power terminal.

2. The power module according to claim 1 , wherein the internal capacitor includes a plurality of capacitors connected in series to each other.

3. The power module according to claim 1 , wherein at least one portion of the sealing unit is sealed with a resin layer by transfer molding.

4. The power module according to claim 1 , wherein the snubber capacitor and the snubber resistor are connected in series to each other via a plurality of electrode patterns mounted on the snubber circuit substrate.

5. The power module according to claim 4 , further comprising a parallel capacitor connected in parallel to the snubber resistor.

6. The power module according to claim 4 , wherein a value of the snubber capacitor is more than 10 times of a value of the internal capacitor.

7. The power module according to claim 1 , wherein the snubber circuit is sealed with a resin, and terminals exposed from the resin are respectively directly connected to the positive-side power terminal and the negative-side power terminal.

8. The power module according to claim 1 , wherein the transistor element comprises one selected from the group consisting of an SiC-MOSFET and a wide gap transistor.

9. The power module according to claim 1 , wherein each time constant of a current ringing vibration of a current conducted to the positive-side power terminal and the negative-side power terminal is equal to or less than 5 μs.

10. The power module according to claim 1 , wherein the snubber circuit is inserted in parallel to the bridge unit.

11. A power module comprising:
a main substrate;
a first electrode pattern disposed on the main substrate, the first electrode pattern connected to a positive-side power terminal;
a second electrode pattern disposed on the main substrate, the second electrode pattern connected to a negative-side power terminal;
a third electrode pattern disposed on the main substrate, the third electrode pattern connected to an output terminal;
a first transistor element of which a first output is disposed on the first electrode pattern;
a second transistor element of which a second output is disposed on the third electrode pattern;
an internal capacitor disposed between the first electrode pattern and the second electrode pattern; and
a snubber circuit connected so as to extend over between a side of the positive-side power terminal exposed from a sealing unit and a side of the negative-side power terminal exposed from the sealing unit, the sealing unit configured to seal the first transistor element and the second transistor element,
wherein each of the positive-side power terminal and the negative-side power terminal is a flat metallic plate,
the power module further comprises:
a first metallic plate extending from the snubber circuit and connected to the positive-side power terminal, and
a second metallic plate extending from the snubber circuit and connected to the negative side power terminal,

the snubber circuit comprises a snubber circuit substrate, a snubber resistor, and a snubber capacitor,
a value of the snubber resistor is a resistance value by which peak values of currents conducted to the positive side power terminal and the negative side power terminal can be substantially minimized, and
the snubber circuit is disposed outside a connection region between the first metallic plate and the positive-side power terminal, and outside a connection region between the second metallic plate and the negative-side power terminal.

12. The power module according to claim 11 , wherein the main substrate comprises a ceramic substrate.

13. The power module according to claim 12 , wherein the main substrate comprising the ceramic substrate has a multilayered structure.

14. A power module comprising:
a bridge unit comprising a bridge circuit composed including a plurality of transistor elements and an internal capacitor connected so as to extend over between both ends of the bridge circuit;
a positive-side power terminal and a negative-side power terminal of which one ends are respectively connected to both ends of the bridge unit and other ends are respectively exposed to an outside from a sealing unit for sealing the bridge unit; and
a snubber circuit connected so as to extend over between an exposed side of the positive-side power terminal and an exposed side of the negative-side power terminal, the snubber circuit configured to reduce a current noise of the positive-side power terminal and the negative-side power terminal,
wherein each of the positive-side power terminal and the negative-side power terminal is a flat metallic plate,
the power module further comprises:
a first metallic plate extending from a snubber circuit and connected to the positive-side power terminal, and
a second metallic plate extending from the snubber circuit and connected to the negative side power terminal,

the snubber circuit comprises a snubber circuit substrate, a snubber resistor, and a snubber capacitor,
a value of the snubber resistor is a resistance value by which peak values of currents conducted to the positive side power terminal and the negative side power terminal can be substantially minimized, and
the snubber circuit is disposed outside a connection region between the first metallic plate and the positive-side power terminal, and outside a connection region between the second metallic plate and the negative-side power terminal.

15. The power module according to claim 14 , wherein an output terminal of the bridge circuit is exposed in a direction opposite to an exposed direction of the positive-side power terminal and the negative-side power terminal.

16. The power module according to claim 14 , wherein each time constant of a current ringing vibration of a current conducted to the positive-side power terminal and the negative-side power terminal is equal to or less than 5.0 μs.

17. The power module according to claim 14 , wherein the snubber circuit is inserted in parallel to the bridge unit.

Assignees

• Rohm Co Ltd

Inventors

• Otake Hirotaka

Classifications

• H02M7/003

  Constructional details, e.g. physical layout, assembly, wiring or busbar connections · CPC title

• H02M3/158

  including plural semiconductor devices as final control devices for a single load · CPC title

• H10W74/114

  by a substrate and the encapsulations · CPC title

• H10W72/5473

  multiple bond wires connected to a common bond pad · CPC title

• H10W72/5445

  being orthogonal to a side surface of the chip, e.g. parallel arrangements · CPC title