Substrate treatment method using a block copolymer containing a hydrophilic and a hydrophobic polymers

Patent metadata

Field	Value
Publication number	US-10418242-B2
Application number	US-201515512614-A
Country	US
Kind code	B2
Filing date	Sep 15, 2015
Priority date	Sep 24, 2014
Publication date	Sep 17, 2019
Grant date	Sep 17, 2019

Abstract

A substrate treatment method of treating a substrate using a block copolymer containing a hydrophilic polymer and a hydrophobic polymer, includes: a resist pattern formation step of forming a predetermined resist pattern by a resist film on the substrate; a thin film formation step of forming a thin film for suppressing deformation of the resist pattern on a surface of the resist pattern; a block copolymer coating step of applying a block copolymer to the substrate after the formation of the thin film; and a polymer separation step of phase-separating the block copolymer into the hydrophilic polymer and the hydrophobic polymer.

First claim

What is claimed:

1. A substrate treatment method of treating a substrate using a block copolymer containing a hydrophilic polymer and a hydrophobic polymer, the substrate treatment method comprising:
a resist pattern formation step of forming a predetermined resist pattern by a resist film on the substrate;
a thin film formation step of forming a thin film of 2 nm to 3 nm thickness for suppressing deformation of the resist pattern to cover a surface of the resist pattern with the thin film, wherein the thin film is a silicon-containing film;
a block copolymer coating step of applying a block copolymer to the substrate after the formation of the thin film; and
a polymer separation step of phase-separating the block copolymer into the hydrophilic polymer and the hydrophobic polymer.

2. The substrate treatment method according to claim 1 ,
wherein the silicon-containing film is formed by plasma processing, and
wherein the plasma processing is performed by applying high-frequency power to an electrode containing silicon.

3. The substrate treatment method according to claim 1 ,
wherein the silicon-containing film is SiO, SiO 2 , or SiOC.

Assignees

• Tokyo Electron Ltd

Inventors

• Muramatsu Makoto
• Tomita Tadatoshi
• Genjima Hisashi
• You Gen
• Kitano Takahiro

Classifications

• H10P76/4085

  characterised by the processes involved to create the masks · CPC title

• H10P76/4083

  characterised by their behaviours during the lithography processes, e.g. soluble masks or redeposited masks · CPC title

• H10P76/405

  characterised by their composition, e.g. multilayer masks · CPC title

• H10P76/00 Primary

  Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography · CPC title

• H10P72/0462

  characterised by the construction of the processing chambers, e.g. modular processing chambers · CPC title