Resist underlayer film composition, patterning process, and method for forming resist underlayer film

Patent metadata

Field	Value
Publication number	US-10416563-B2
Application number	US-201815915737-A
Country	US
Kind code	B2
Filing date	Mar 8, 2018
Priority date	Mar 31, 2017
Publication date	Sep 17, 2019
Grant date	Sep 17, 2019

Abstract

A resist underlayer film composition is excellent in resistance to a basic hydrogen peroxide aqueous solution in gap-filling and planarization characteristics having a dry etching characteristic; a patterning process and method for forming a resist underlayer film, wherein the resist underlayer film composition is used for a multilayer resist method, the composition comprising: (a1) one, or two or more, of a compound represented by following general formula (x); and (b) an organic solvent,

wherein n 01 represents an integer of 1 to 10; when n 01 is 2, w represents a sulfinyl group, a sulfonyl group, an ether group, or a divalent organic group having 2 to 50 carbon atoms; when n 01 is an integer other than 2, w represents an n 01 -valent organic group having 2 to 50 carbon atoms; and y represents a single bond or divalent connecting group having 1 to 10 carbon atoms and optionally having an oxygen atom.

First claim

What is claimed is:

1. A resist underlayer film composition, wherein the resist underlayer film composition is used for a multilayer resist method, the composition comprising:
(A1) one, or two or more, of a compound represented by following general formula (X); and
(B) an organic solvent,

wherein “n 01 ”represents an integer of 1 to 10; when “n 01 ” is 2, W represents a sulfinyl group, a sulfonyl group, an ether group, or a divalent organic group having 2 to 50 carbon atoms;
when “n 01 ” is an integer other than 2, W represents an n 01 -valent organic group having 2 to 50 carbon atoms; and Y represents a methylene group, —OCH 2 CH(OH)CH 2 OC(═O) —, —CH 2 CH(OH)CH 2 OC(═O) —, —OCH 2 CH(OH)CH 2 OC(═O)CH 2 —or —CH 2 CH(OH)CH 2 OC(═O)CH 2 —.

2. The resist underlayer film composition according to claim 1 ,
wherein W in the general formula (X) represents a divalent to pentavalent heterocyclic ring group having 3 to 10 carbon atoms.

3. The resist underlayer film composition according to claim 1 ,
wherein the resist underlayer film composition further comprises:
(A2) a polymer (1A) comprising one, or two or more, of a repeating unit represented by following general formula (1),

wherein R 01 represents a hydrogen atom or a methyl group; and R 02 represents a group selected from following formulae (1-1) to (1-3),

wherein dotted lines represent a bonding hand.

4. The resist underlayer film composition according to claim 3 , wherein the polymer (1A) further comprises one, or two or more, of a repeating unit represented by following general formula (2),

wherein R 01 represents the same as before; A 1 represents a single bond, —CO 2 —, or a divalent connecting group having 2 to 10 carbon atoms and including —CO 2 —; and Ar 1 represents a substituted or unsubstituted aryl group having 6 to 20 carbon atoms.

5. The resist underlayer film composition according to claim 3 ,
wherein the polymer (1A) further comprises one, or two or more, of a repeating unit represented by following general formula (3),

wherein R 01 represents the same as before; and R c represents a monovalent group having 3 to 20 carbon atoms and having an alicyclic structure.

6. The resist underlayer film composition according to claim 3 ,
wherein a weight average molecular weight of the polymer (1A) is in a range of 1,000 to 20,000.

7. The resist underlayer film composition according to claim 1 ,
wherein the resist underlayer film composition further comprises one or more additives out of (C) an acid generator, (D) a surfactant, (E) a crosslinking agent, (F) a plasticizer, and (G) a pigment.

8. The resist underlayer film composition according to claim 1 ,
wherein the resist underlayer film composition is the resist underlayer film composition which gives a resist underlayer film having a resistance to an ammonia-containing hydrogen peroxide aqueous solution.

9. The resist underlayer film composition according to claim 8 ,
wherein the resist underlayer film is the resist underlayer film which does not show any peel-off of its own when a silicon substrate formed with the resist underlayer film is soaked into a 1.0% by mass hydrogen peroxide aqueous solution containing 0.5% by mass of ammonia at 70° C. for 5 minutes.

10. A patterning process, wherein the patterning process is to form a pattern on a substrate to be processed and comprises:
(I-1) forming a resist underlayer film on the substrate to be processed by using the resist underlayer film composition according to claim 1 ,
(I-2) forming a resist upper layer film on the resist underlayer film by using a photoresist composition,
(I-3) forming a pattern on the resist upper layer film by developing the resist upper layer film by using a developer after the resist upper layer film is pattern-exposed, and
(I-4) transcribing the pattern to the resist underlayer film by dry etching using as a mask the resist upper layer film formed with the pattern.

11. A patterning process, wherein the patterning process is to form a pattern on a substrate to be processed and comprises:
(II-1) forming a resist underlayer film on the substrate to be processed by using the resist underlayer film composition according to claim 1 ,
(II-2) forming a resist intermediate film on the resist underlayer film,
(II-3) forming a resist upper layer film on the resist intermediate film by using a photoresist composition,
(II-4) forming a pattern on the resist upper layer film by developing the resist upper layer film by using a developer after the resist upper layer film is pattern-exposed,
(II-5) transcribing the pattern to the resist intermediate film by dry etching using as a mask the resist upper layer film formed with the pattern, and
(II-6) transcribing the pattern to the resist underlayer film by dry etching using as a mask the resist intermediate film transcribed with the pattern.

12. A patterning process, wherein the patterning process is to form a pattern on a substrate to be processed and comprises:
(III-1) forming a resist underlayer film on the substrate to be processed by using the resist underlayer film composition according to claim 1 ,
(III-2) forming an inorganic hard mask intermediate film selected from a silicon oxide film, a silicon nitride film, and a silicon oxide nitride film on the resist underlayer film,
(III-3) forming an organic antireflective film on the inorganic hard mask intermediate film,
(III-4) forming a resist upper layer film on the organic antireflective film by using a photoresist composition,
(III-5) forming a pattern on the resist upper layer film by developing the resist upper layer film by using a developer after the resist upper layer film is pattern-exposed,
(III-6) transcribing the pattern to the organic antireflective film and the inorganic hard mask intermediate film by dry etching using as a mask the resist upper layer film formed with the pattern, and
(III-7) transcribing the pattern to the resist underlayer film by dry etching using as a mask the inorganic hard mask intermediate film transcribed with the pattern.

13. The patterning process according to claim 11 , wherein after the (II-6) step, the patterning process further has a step in which the resist intermediate film transcribed with the pattern is removed by wet etching using a basic hydrogen peroxide aqueous solution.

14. The patterning process according to claim 10 , wherein after the (I-4) step, the (II-6) step, or the (III-7) step, the patterning process further has a step in which the pattern is transcribed to the substrate to be processed by wet etching using a basic hydrogen peroxide aqueous solution and the resist underlayer film transcribed with the pattern as a mask.

15. The patterning process according to claim 10 , wherein after the (I-4) step, the (II-6) step, or the (III-7) step, the patterning process further has a step in which the substrate to be processed is pattern-processed by an ion implantation using as a mask the resist underlayer film transcribed with the pattern.

16. The patterning process ac

Assignees

• Shinetsu Chemical Co

Inventors

• Satoh Hironori
• Nagai Hiroko
• Watanabe Takeru
• Kori Daisuke
• Ogihara Tsutomu

Classifications

• H10P50/695

  characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask · CPC title

• H10P50/692

  characterised by their composition, e.g. multilayer masks or materials · CPC title

• H10P50/287

  by chemical means · CPC title

• H10P50/73

  using masks for insulating materials · CPC title

• H10P30/22

  using masks · CPC title