RF clean system for electrostatic elements

Patent metadata

Field	Value
Publication number	US-10410844-B2
Application number	US-201715427336-A
Country	US
Kind code	B2
Filing date	Feb 8, 2017
Priority date	Dec 9, 2016
Publication date	Sep 10, 2019
Grant date	Sep 10, 2019

Abstract

Provided herein are approaches for in-situ plasma cleaning of one or more components of an ion implantation system. In one approach, the component may include a beam-line component, such as an energy purity module, having a plurality of conductive beam optics contained therein. The system further includes a power supply system for supplying a voltage and a current to the beam-line component during a cleaning mode, wherein the power supply system may include a first power plug coupled to a first subset of the plurality of conductive beam optics and a second power plug coupled to a second subset of the plurality of conductive beam optics. During a cleaning mode, the voltage and current may be simultaneously supplied and split between each of the first and second power plugs.

First claim

The invention claimed is:

1. An ion implantation system, comprising:
a chamber;
an electrostatic filter disposed within the chamber, the electrostatic filter comprising:
a frame;
a plurality of electrostatic electrodes extending between sidewalls of the frame; and
a plurality of feedthrough components coupled to corresponding electrostatic electrodes, of the plurality of electrostatic electrodes, the plurality of feedthrough components extending through the frame; and
a power supply system in communication with the plurality of electrostatic electrodes, the power supply system comprising a first power plug and a second power plug for supplying a voltage and a current to the plurality of electrostatic electrodes during an in-situ plasma cleaning mode of the plurality of electrodes, the first power plug coupled to a first subset of the plurality of electrostatic electrodes and the second power plug coupled to a second subset of the plurality of electrostatic electrodes, wherein the first power plug comprises a housing physically coupleable with the frame of the electrostatic filter.

2. The ion implantation system of claim 1 , further comprising:
an inductor; and
a first power distribution plate and a second power distribution plate electrically coupled to the inductor.

3. The ion implantation system of claim 2 , wherein the first power distribution plate is electrically coupled with the first subset of the plurality of electrostatic electrodes, and wherein the second power distribution plate is electrically coupled with the second subset of the plurality of electrostatic electrodes.

4. The ion implantation system of claim 2 , further comprising:
a plurality of connection cables coupling the first and second power distribution plates to the first and second power plugs; and
an additional distribution plate for powering at least one additional electrostatic electrode having a different electrical impedance than the plurality of electrostatic electrodes, wherein the additional distribution plate is disposed in proximity to at least one of: the first power distribution plate, the second power distribution plate, the inductor, and the plurality of connection cables.

5. The ion implantation system of claim 4 , wherein the additional distribution plate is electrically coupled with the at least one additional electrostatic electrode.

6. The ion implantation system of claim 4 , wherein the additional distribution plate receives power by capacitive coupling or inductive coupling from at least one of: the first power distribution plate, the second power distribution plate, the inductor, and the plurality of connection cables.

7. The ion implantation system of claim 4 , wherein the plurality of electrostatic electrodes includes a first row of acceleration/deceleration conductive beam optics disposed along a first side of an ion beam-line, a second row of acceleration/deceleration conductive beam optics disposed along a second side of the ion beam-line, and wherein the at least one additional electrode includes a set of focus conductive beam optics between the first and second rows of acceleration/deceleration conductive beam optics.

8. The ion implantation system of claim 1 , wherein the first power plug is coupled to a first end of the plurality of conductive beam optics and the second power plug coupled to a second end of the plurality of electrostatic electrodes.

9. The ion implantation system of claim 1 , wherein the first power plug is coupled to a first end of the first subset of the plurality of electrostatic electrodes and the second power plug is coupled to a second end of the second subset of the plurality of electrostatic electrodes.

10. The ion implantation system of claim 1 , wherein at least one of the first power plug and the second power plug includes a plurality of terminals directly coupled to corresponding feedthrough components of the plurality of feedthrough components.

Assignees

• Varian Semiconductor Equipment Ass Inc

Inventors

• Anglin Kevin
• Binns Brant S
• Kurunczi Peter F
• Scheuer Jay T
• Hermanson Eric
• Likhanskii Alexandre

Classifications

• H01J37/3171

  for ion implantation · CPC title

• H01J37/32862 Primary

  In situ cleaning of vessels and/or internal parts · CPC title

• H01J2237/057

  Energy or mass filtering · CPC title

• H01J2237/335

  Cleaning · CPC title

• B08B5/00

  Cleaning by methods involving the use of air flow or gas flow (cleaning hollow articles by methods or apparatus specially adapted thereto B08B9/00) · CPC title