Non-contact electron beam probing techniques and related structures

Patent metadata

Field	Value
Publication number	US-10403359-B2
Application number	US-201815918662-A
Country	US
Kind code	B2
Filing date	Mar 12, 2018
Priority date	Dec 20, 2017
Publication date	Sep 3, 2019
Grant date	Sep 3, 2019

Abstract

Methods, systems, and devices for non-contact electron beam probing techniques, including at one or more intermediate stages of fabrication, are described. One subset of first access lines may be grounded and coupled with one or more memory cells. A second subset of first access lines may be floating and coupled with one or more memory cells. A second access line may correspond to each first access line and may be configured to be coupled with the corresponding first access line, by way of one or more corresponding memory cells, when scanned with an electron beam. A leakage path may be determined by comparing an optical pattern generated in part by determining a brightness of each scanned access line and comparing the generated optical pattern with a second optical pattern.

First claim

What is claimed is:

1. A method, comprising:
identifying a first subset of a plurality of access lines configured to be coupled with a ground reference when scanned by an electron beam;
identifying a second subset of the plurality of access lines configured to be isolated from the ground reference when scanned by the electron beam;
scanning the plurality of access lines with the electron beam;
generating an optical pattern based at least in part on scanning the plurality of access lines with the electron beam;
comparing the generated optical pattern to a second optical pattern; and
determining a leakage path based at least in part on a difference between the generated optical pattern and the second optical pattern.

2. The method of claim 1 , wherein generating the optical pattern comprises:
determining a brightness of each access line when scanned by the electron beam.

3. The method of claim 1 , wherein the second optical pattern is based at least in part on a configuration of a plurality of lower access lines each respectively corresponding to one of the plurality of access lines.

4. The method of claim 1 , wherein the second optical pattern comprises:
one or more sets of access lines having a first expected brightness, each set of access lines having the first expected brightness adjacent to an access line having a second expected brightness that is lower than the first expected brightness.

5. The method of claim 4 , wherein each set of access lines comprises one, two, or four access lines in the first subset.

Assignees

• Micron Technology Inc

Inventors

• Majumdar Amitava
• Kamana Rajesh
• Wang Hongmei
• Lyonsmith Shawn D
• Hill Ervin T
• Liu Zengtao T
• Hug Marlon W

Classifications

• G11C29/56008

  Error analysis, representation of errors · CPC title

• G11C29/025

  in signal lines · CPC title

• G11C2029/5602

  Interface to device under test · CPC title

• G11C29/56016

  Apparatus features · CPC title

• G11C29/50004

  of threshold voltage · CPC title