Polishing method and polishing apparatus

Patent metadata

Field	Value
Publication number	US-10399203-B2
Application number	US-201515304829-A
Country	US
Kind code	B2
Filing date	Apr 10, 2015
Priority date	Apr 22, 2014
Publication date	Sep 3, 2019
Grant date	Sep 3, 2019

Abstract

The present invention relates to a polishing method and a polishing apparatus for polishing a substrate such as a wafer while measuring a film thickness based on optical information included in reflected light from the substrate. The polishing method includes preparing a plurality of spectrum groups each containing a plurality of reference spectra corresponding to different film thicknesses; directing light to a substrate and receiving reflected light from the substrate; producing, from the reflected light, a sampling spectrum for selecting a spectrum group; selecting a spectrum group containing a reference spectrum which is closest in shape to the sampling spectrum; producing a measurement spectrum for obtaining a film thickness while polishing the substrate; selecting, from the selected spectrum group, a reference spectrum which is closest in shape to the measurement spectrum that has been produced when the substrate is being polished; and obtaining a film thickness corresponding to the selected reference spectrum.

First claim

The invention claimed is:

1. A polishing method comprising:
preparing a plurality of spectrum groups each containing a plurality of reference spectra corresponding to different film thicknesses;
directing light to a substrate and receiving reflected light from the substrate;
producing, from the reflected light, a sampling spectrum for selecting a spectrum group;
selecting a spectrum group containing a reference spectrum which is closest in shape to the sampling spectrum;
producing a measurement spectrum for obtaining a film thickness while polishing the substrate;
selecting, from the selected spectrum group, a reference spectrum which is closest in shape to the measurement spectrum that has been produced when the substrate is being polished; and
obtaining a film thickness corresponding to the selected reference spectrum,
wherein the plurality of spectrum groups are stored in a database,
the database contains history information with respect to selection of the plurality of spectrum groups, and
based on the history information, deleting a spectrum group that has not been selected for a predetermined period of time from the database, or storing, as a new spectral group in the database, a data of a measurement point on the substrate, together with film thicknesses at the measurement point, wherein the film thicknesses have been measured by an inline film-thickness measuring unit before and after polishing of the substrate.

2. The polishing method according to claim 1 , wherein selecting the spectrum group comprises selecting a spectrum group containing a reference spectrum with a smallest deviation from the sampling spectrum.

3. The polishing method according to claim 1 , wherein selecting the spectrum group is carried out when the substrate is being polished.

4. The polishing method according to claim 3 , wherein selecting the spectrum group is carried out using the sampling spectrum which has been produced within a preset polishing time.

5. The polishing method according to claim 1 , wherein selecting the spectrum group is carried out before the substrate is polished.

6. The polishing method according to claim 5 , wherein selecting the spectrum group is carried out when the substrate is being water-polished in a presence of pure water existing between the substrate and a polishing pad.

7. The polishing method according to claim 1 , further comprising:
reproducing a sampling spectrum while polishing the substrate; and
reselecting a spectrum group containing a reference spectrum which is closest in shape to the reproduced sampling spectrum,
wherein selecting the reference spectrum comprises selecting, from the reselected spectrum group, a reference spectrum which is closest in shape to the measurement spectrum that has been produced when the substrate is being polished.

8. The polishing method according to claim 1 , wherein the plurality of spectrum groups are obtained by:
directing light to a plurality of areas defined on a reference substrate having a same film thickness as or a larger film thickness than a film thickness of the substrate, while polishing the reference substrate;
producing a plurality of reference spectra from the light reflected from the plurality of areas; and
classifying the plurality of reference spectra according to the plurality of areas.

9. The polishing method according to claim 8 , further comprising:
preselecting spectrum groups obtained in areas near an area where the film thickness of the substrate is to be monitored.

10. The polishing method according to claim 1 , wherein the plurality of spectrum groups are obtained by:
selecting one of a plurality of reference substrates each having a same film thickness as or a larger film thickness than a film thickness of the substrate;
directing light to the selected reference substrate while polishing the selected reference substrate;
obtaining one or more spectrum groups by producing a plurality of reference spectra from the light reflected from the reference substrate; and
repeating the process of directing the light to the selected reference substrate and the process of obtaining one or more spectrum groups, while changing the reference substrate, to be selected, from one to another each time the repeating is performed.

11. The polishing method according to claim 1 , wherein the plurality of reference spectra contained in each of the plurality of spectrum groups comprise spectra produced by a simulation of light reflection.

12. The polishing method according to claim 1 , wherein the database is constructed in a date server, and the data server deletes a spectrum group that has not been selected for a predetermined period of time from the database based on the history information, or stores a data of a measurement point on the substrate, together with film thicknesses at the measurement point that have been measured by an inline film-thickness measuring unit before and after polishing of the substrate, as a new spectral group in the database.

13. The polishing method according to claim 1 , wherein the database is a database common to a plurality of polishing apparatuses.

14. A polishing method comprising:
preparing a plurality of spectrum groups each containing a plurality of reference spectra corresponding to different film thicknesses;
directing light to a substrate and receiving reflected light from the substrate;
producing, from the reflected light, a sampling spectrum for selecting a spectrum group;
selecting a spectrum group containing a reference spectrum which is closest in shape to the sampling spectrum;
producing a measurement spectrum for obtaining a film thickness while polishing the substrate;
selecting, from the selected spectrum group, a reference spectrum which is closest in shape to the measurement spectrum that has been produced when the substrate is being polished;
obtaining a film thickness corresponding to the selected reference spectrum; and
excluding in advance, from the plurality of spectrum groups, one of spectrum groups containing reference spectra which are close in shape to each other.

15. A polishing method comprising:
obtaining at least one spectrum group containing a plurality of reference spectra by polishing a reference substrate;
correcting the plurality of reference spectra such that a polishing rate of the reference substrate is regarded as constant, thereby obtaining a plurality of corrected reference spectra corresponding to different film thicknesses;
directing light to a substrate and receiving reflected light from the substrate;
producing a measurement spectrum for obtaining a film thickness while polishing the substrate;
selecting, from the at least one spectrum group, a corrected reference spectrum which is closest in shape to the measurement spectrum that has been produced when the substrate is being polished; and
obtaining a film thickness corresponding to the corrected reference spectrum selected.

Assignees

• Ebara Corp

Inventors

• Kobayashi Yoichi
• Yagi Keita
• Kinoshita Masaki
• Shiokawa Yoichi

Classifications

• H10P74/238

  comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement · CPC title

• H10P74/203

  Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects · CPC title

• H10P72/00

  Handling or holding of wafers, substrates or devices during manufacture or treatment thereof · CPC title

• B24B49/04

  involving measurement of the workpiece at the place of grinding during grinding operation · CPC title

• B24B37/34

  Accessories · CPC title