Die attach methods and semiconductor devices manufactured based on such methods

Patent metadata

Field	Value
Publication number	US-10396015-B2
Application number	US-201715663956-A
Country	US
Kind code	B2
Filing date	Jul 31, 2017
Priority date	Aug 4, 2016
Publication date	Aug 27, 2019
Grant date	Aug 27, 2019

Abstract

A semiconductor device includes a carrier, a semiconductor die and a die attach material arranged between the carrier and the semiconductor die. A fillet height of the die attach material is less than about 95% of a height of the semiconductor die. A maximum extension of the die attach material over edges of a main surface of the semiconductor die facing the die attach material is less than about 200 micrometers.

First claim

What is claimed is:

1. A semiconductor device, comprising:
a carrier;
a semiconductor die; and
a die attach material arranged between the carrier and the semiconductor die,
wherein a fillet height of the die attach material is less than about 95% of a height of the semiconductor die,
wherein a maximum extension of the die attach material over edges of a main surface of the semiconductor die facing the die attach material is less than about 200 micrometers,
wherein a thermal conductivity of the die attach material is greater than about 0.5 W/(m ·K),
wherein the die attach material comprises a polymeric material and at least one of electrically conductive and thermally conductive filler particles, and
wherein the filler particles have a diameter of greater than 50 nm and less than 9 μm.

2. The semiconductor device of claim 1 , wherein the filler particles comprise at least one of silicon dioxide, aluminum oxide, alumina, boron nitride, silicon carbide, gallium nitride, and mixing systems thereof.

3. The semiconductor device of claim 1 , wherein the die attach material forms a fillet at a side surface of the semiconductor die, wherein the fillet height is the height of a portion of the side surface covered by the die attach material.

4. The semiconductor device of claim 1 , wherein the carrier comprises at least one of a lead, a die pad, a leadframe, a printed circuit board, a ceramic, a metal plated ceramic, a substrate, and a power electronic substrate.

5. The semiconductor device of claim 1 , wherein the die attach material extends over the edges of the main surface of the semiconductor die facing the die attach material at more of about 50% of the overall length of the edges.

6. The semiconductor device of claim 1 , wherein the filler particles comprise at least one of silver, copper, nickel, gold, aluminum, and mixing systems thereof.

7. The semiconductor device of claim 1 , wherein an average bondline thickness of the die attach material is in a range from about 10 micrometers to about 80 micrometers.

8. The semiconductor device of claim 1 , wherein a tilt of the semiconductor die or the die attach material is less than about 15 micrometers.

9. The semiconductor device of claim 1 , wherein the height of the semiconductor die is less than about 400 micrometers.

10. The semiconductor device of claim 1 , wherein the fillet has a shape of a meniscus.

Assignees

• Infineon Technologies Ag

Inventors

• Mahler Joachim
• Reichert Benjamin
• Lee Chen Wen
• Garbin Giovanni Ragasa
• Strobel Peter

Classifications

• H10W72/07353

  changes in shapes · CPC title

• H10W72/07352

  changes in structures or sizes · CPC title

• H10W72/07336

  Soldering or alloying · CPC title

• H10W72/334

  Cross-sectional shape, i.e. in side view · CPC title

• H10W72/332

  Plan-view shape, i.e. in top view · CPC title