Seed material for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon carbide

Patent metadata

Field	Value
Publication number	US-10358741-B2
Application number	US-201113996077-A
Country	US
Kind code	B2
Filing date	Jun 29, 2011
Priority date	Dec 24, 2010
Publication date	Jul 23, 2019
Grant date	Jul 23, 2019

Abstract

Provided is an inexpensive seed material for liquid phase epitaxial growth of silicon carbide. A seed material 12 for liquid phase epitaxial growth of a monocrystalline silicon carbide includes a surface layer containing a polycrystalline silicon carbide with a 3C crystal polymorph. Upon X-ray diffraction of the surface layer thereof, a first-order diffraction peak corresponding to a (111) crystal plane is observed as a diffraction peak corresponding to the polycrystalline silicon carbide with a 3C crystal polymorph but no other first-order diffraction peak having a diffraction intensity of 10% or more of the diffraction intensity of the first-order diffraction peak corresponding to the (111) crystal plane is observed.

First claim

The invention claimed is:

1. A seed material for liquid phase epitaxial growth of a monocrystalline silicon carbide, the seed material being used in a method for liquid phase epitaxial growth of a monocrystalline silicon carbide and including a surface layer containing a polycrystalline silicon carbide with a 3C crystal polymorph,
wherein upon X-ray diffraction of the surface layer, a first-order diffraction peak corresponding to a (111) crystal plane is observed as a diffraction peak corresponding to the polycrystalline silicon carbide with a 3C crystal polymorph but no other first-order diffraction peak having a diffraction intensity of 10% or more of the diffraction intensity of the first-order diffraction peak corresponding to the (111) crystal plane is observed;
an LO peak derived from a polycrystalline silicon carbide with a 3C crystal polymorph is observed upon Raman spectroscopic analysis of the surface layer with an excitation wavelength of 532 nm and the absolute amount of shift of the LO peak from 972 cm −1 is 4 cm −1 or more;
the surface layer is substantially made of the polycrystalline silicon carbide with a 3C crystal polymorph; and
a full width at half-maximum of the LO peak is 15 cm −1 or less.

2. The seed material for liquid phase epitaxial growth of a monocrystalline silicon carbide according to claim 1 , wherein
upon X-ray diffraction of the surface layer at least one first-order diffraction peak is observed, each first-order diffraction peak corresponding to one of a (111) crystal plane, a (200) crystal plane, a (220) crystal plane, and a (311) crystal plane, and
the average crystallite diameter calculated from the at least one first-order diffraction peak is more than 700 Å.

3. The seed material for liquid phase epitaxial growth of a monocrystalline silicon carbide according to claim 1 , wherein the proportion of (111) crystal planes having an orientation angle of 67.5° or more in the (111) crystal planes observed by X-ray diffraction of the surface layer is 80% or more.

4. The seed material for liquid phase epitaxial growth of a monocrystalline silicon carbide according to claim 1 , wherein the amount of shift of the LO peak from 972 cm −1 is 4 cm −1 or more.

5. The seed material for liquid phase epitaxial growth of a monocrystalline silicon carbide according to claim 1 , the seed material including: a support member; and a polycrystalline silicon carbide film formed on the support member and forming the surface layer.

6. The seed material for liquid phase epitaxial growth of a monocrystalline silicon carbide according to claim 5 , wherein the polycrystalline silicon carbide film has a thickness within a range of 30 μm to 800 μm.

7. The seed material for liquid phase epitaxial growth of a monocrystalline silicon carbide according to claim 1 , the seed material being formed of a polycrystalline silicon carbide material containing a polycrystalline silicon carbide with a 3C crystal polymorph.

8. A method for liquid phase epitaxial growth of a monocrystalline silicon carbide, wherein the seed material for liquid phase epitaxial growth of a monocrystalline silicon carbide according to claim 1 and a feed material including a surface layer made of silicon carbide are heated with the surface layers of the seed material and the feed material facing each other through a silicon melt layer to epitaxially grow a monocrystalline silicon carbide on the surface layer of the seed material.

Assignees

• Torimi Satoshi
• Nogami Satoru
• Matsumoto Tsuyoshi
• Toyo Tanso Co

Inventors

• Torimi Satoshi
• Nogami Satoru
• Matsumoto Tsuyoshi

Classifications

• C30B29/36

  Carbides · CPC title

• C30B28/14

  by chemical reaction of reactive gases · CPC title

• C30B19/12 Primary

  characterised by the substrate · CPC title

• Y10T428/26

  Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension · CPC title

• H10P14/20

  of semiconductor materials · CPC title