Measurement recipe optimization based on spectral sensitivity and process variation

Patent metadata

Field	Value
Publication number	US-10354929-B2
Application number	US-201313887524-A
Country	US
Kind code	B2
Filing date	May 6, 2013
Priority date	May 8, 2012
Publication date	Jul 16, 2019
Grant date	Jul 16, 2019

Abstract

An optimized measurement recipe is determined by reducing the set of measurement technologies and ranges of machine parameters required to achieve a satisfactory measurement result. The reduction in the set of measurement technologies and ranges of machine parameters is based on available process variation information and spectral sensitivity information associated with an initial measurement model. The process variation information and spectral sensitivity information are used to determine a second measurement model having fewer floating parameters and less correlation among parameters. Subsequent measurement analysis is performed using the second, constrained model and a set of measurement data corresponding to a reduced set of measurement technologies and ranges of machine parameters. The results of the subsequent measurement analysis are compared with reference measurement results to determine if a difference between the estimated parameter values and the parameter values derived from the reference measurement is within a predetermined threshold.

First claim

What is claimed is:

1. A method comprising:
providing a first amount of illumination light over a first range of illumination wavelengths to a target structure disposed on a semiconductor wafer, the first amount of illumination light provided by an illuminator of a first semiconductor metrology system;
detecting a first amount of light from the target structure in response to the first amount of illumination light provided to the semiconductor wafer, the first amount of light detected by a detector of the first semiconductor metrology system;
providing a second amount of illumination light over a second range of illumination wavelengths to the target structure disposed on the semiconductor wafer, the second amount of illumination light provided by an illuminator of a second semiconductor metrology system;
detecting a second amount of light from the target structure in response to the second amount of illumination light provided to the semiconductor wafer, the second amount of light detected by a detector of the second semiconductor metrology system;
generating a first amount of measurement data from the first amount of detected light and a second amount of measurement data from the second amount of detected light;
determining a first measurement model of the target structure parameterized by a first set of parameters including machine parameters and specimen parameters including a specimen parameter of interest;
receiving an amount of process variation data associated with the target structure;
determining a spectral sensitivity of the first measurement model to variations of the first and second ranges of illumination wavelengths;
transforming the first measurement model to a second measurement model of the structure parameterized by a second set of parameters, wherein the transforming of the first model is based on the spectral sensitivity of the first measurement model and the amount of process variation data, and wherein the second set of parameters is different from the first set of parameters;
providing a third amount of illumination light over a reduced range of illumination wavelengths to the target structure disposed on the semiconductor wafer, the third amount of illumination light provided by the illuminator of a selected semiconductor metrology system, wherein the selected semiconductor metrology system is either the first or second semiconductor metrology system;
detecting a third amount of light from the target structure in response to the third amount of illumination light provided to the target structure, the third amount of light detected by the detector of the selected semiconductor metrology system;
generating a third amount of measurement data based on the third amount of detected light;
determining if a difference between an estimated value of the specimen parameter of interest based on a regression of the third amount of measurement data on the second measurement model and a value of the specimen parameter of interest based on a measurement of the target structure by a reference measurement system exceeds a threshold value; and
storing the reduced range of illumination wavelengths and the selected semiconductor metrology system in a memory if the difference does not exceed the threshold value.

2. The method of claim 1 , wherein the first semiconductor metrology system is a spectroscopic ellipsometer and the first amount of measurement data comprises spectral measurement data, and wherein the second semiconductor metrology system is a two dimensional beam profile reflectometer and the second amount of measurement data comprises pupil image data.

3. The method of claim 1 , further comprising:
determining a fourth amount of measurement data associated with measurements of the target structure performed using a further reduced range of illumination wavelengths if the difference does exceed the threshold value.

4. The method of claim 1 , wherein the specimen parameter of interest is a critical dimension.

5. The method of claim 1 , wherein the transforming the first model of the structure to the second model of the structure involves reducing a number of degrees of freedom of the first set of parameters to a smaller number of degrees of freedom of the second set of parameters.

6. The method of claim 1 , wherein the amount of process variation data includes any of a constraint equation defining a relationship between two or more parameters, a correlation matrix defining the relationship between two or more parameters, and a set of expected profiles selected by a user.

7. The method of claim 1 , wherein the first and second models describe multiple targets.

8. A system to generate an optimized measurement recipe based on spectral sensitivity and process variation data, the system comprising:
a first metrology system including an illumination source configured to provide a first amount of illumination light including a first range of illumination wavelengths to a target structure disposed on a semiconductor wafer and a detector configured to detect a first amount of light from a portion of the semiconductor wafer in response to the first amount of illumination light provided to the semiconductor wafer and generate a first amount of measurement data from the first amount of detected light;
a second metrology system including an illumination source configured to provide a second amount of illumination light including a second range of illumination wavelengths to a target structure disposed on a semiconductor wafer and a detector configured to detect a second amount of light from a portion of the semiconductor wafer in response to the second amount of illumination light provided to the semiconductor wafer and generate a second amount of measurement data from the second amount of detected light;
a computing system configured to:
determine a first measurement model of the target structure parameterized by a first set of parameters including machine parameters and specimen parameters including a specimen parameter of interest;
receive an amount of process variation data associated with the target structure;
determine a spectral sensitivity of the first measurement model to variations of the first and second ranges of illumination wavelengths;
transform the first measurement model to a second measurement model of the structure including a second set of parameters, wherein the transforming of the first model is based on the spectral sensitivity of the first measurement model and the amount of process variation data, and wherein the second set of parameters is different from the first set of parameters;
determine a difference between a result of a regression of a third amount of measurement data on the second measurement model and a result of a reference measurement of the target structure; and
store a reduced range of wavelengths and a selected semiconductor metrology system in a memory if the difference does not exceed a threshold value, wherein the third amount of measurement data is based on a third amount of light detected by a detector of the selected semiconductor metrology system in response to a third amount of illumination light provided to the target structure over the reduced range of illumination wavelengths, and wherein the selected metrology system is either the first or second metrology system.

9. The system of claim 8 , wherein the first semiconductor metrology system is a spectroscopic ellipsometer and the first amount of measurement data comprises spectral measurement data, and wherein the second semiconductor metrology system is a two dimensional beam profile reflectometer and the second amount of measurement data comprises pupil image data.

10. The system of claim 8 , wherei

Assignees

• Kla Tencor Corp

Inventors

• Pandev Stilian Ivanov

Classifications

• H10P74/203

  Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects · CPC title

• H10P74/23 Primary

  characterised by multiple measurements, corrections, marking or sorting processes · CPC title

• H01L2924/0002

  Electricity · mapped topic

• H01L2924/00

  Electricity · mapped topic

• H01L22/12

  Electricity · mapped topic