Method and apparatus for anisotropic tungsten etching

Patent metadata

Field	Value
Publication number	US-10354888-B2
Application number	US-201715463869-A
Country	US
Kind code	B2
Filing date	Mar 20, 2017
Priority date	Jan 5, 2015
Publication date	Jul 16, 2019
Grant date	Jul 16, 2019

Abstract

Methods for anisotropically etching a tungsten-containing material (such as doped or undoped tungsten metal) include cyclic treatment of tungsten surface with Cl2 plasma and with oxygen-containing radicals. Treatment with chlorine plasma is performed while the substrate is electrically biased resulting in predominant etching of horizontal surfaces on the substrate. Treatment with oxygen-containing radicals passivates the surface of the substrate to etching, and protects the vertical surfaces of the substrate, such as sidewalls of recessed features, from etching. Treatment with Cl2 plasma and with oxygen-containing radicals can be repeated in order to remove a desired amount of material. Anisotropic etching can be performed selectively in a presence of dielectric materials such as silicon oxide, silicon nitride, and silicon oxynitride.

First claim

What is claimed is:

1. A method of anisotropically etching a tungsten-containing material on a semiconductor substrate in a plasma etching apparatus, the method comprising:
(a) providing a semiconductor substrate comprising a tungsten-containing material to a plasma etching process chamber;
(b) introducing a first process gas to the plasma etching process chamber, wherein the first process gas consists essentially of Cl 2 , and forming a plasma to react the tungsten-containing material with a plasma-activated chlorine, etch the tungsten-containing material and expose a new surface of the tungsten-containing material;
(c) removing the first process gas from the plasma etching process chamber after (b);
(d) directly after removing the first process gas from the plasma etching process chamber, introducing a second process gas comprising an oxygen radical source and a hydrofluorocarbon to the plasma etching process chamber and forming a plasma comprising oxygen radicals to react the plasma with the new exposed surface of the tungsten-containing material and thereby form a passivation layer comprising a compound that includes tungsten and oxygen, wherein the oxygen radical source is a gas selected from the group consisting of O 2 , O 3 , CO, CO 2 and mixtures thereof; and
(e) removing the second process gas from the plasma etching process chamber after (d), wherein the method predominantly etches the tungsten-containing material in a selected direction.

2. The method of claim 1 , wherein forming a plasma in (b) comprises providing a bias of at least about 500 V to a substrate-holding support.

3. The method of claim 1 , wherein the hydrofluorocarbon is CH 3 F.

4. The method of claim 1 , wherein (b) comprises pulsing the plasma.

5. The method of claim 1 , wherein the source of oxygen radicals is O 2 .

6. The method of claim 1 , wherein operations (b) (e) are repeated.

7. The method of claim 1 , wherein the semiconductor substrate further comprises an exposed layer of a dielectric material selected from the group consisting of silicon oxide, silicon nitride, and silicon oxynitride.

8. The method of claim 1 , wherein the semiconductor substrate further comprises an exposed layer of a dielectric material selected from the group consisting of silicon oxide, silicon nitride, and silicon oxynitride, and wherein the tungsten-containing material is etched with an etch selectivity of at least about 2:1.

9. The method of claim 1 , wherein the semiconductor substrate comprises a recessed feature comprising an exposed layer of tungsten-containing material at the bottom of the recessed feature, and wherein the etching removes the tungsten-containing material from the bottom of the recessed feature without substantially altering the width or diameter of the recessed feature.

10. The method of claim 1 , wherein the method comprises etching a layer of tungsten-containing material having a thickness of between about 1000-7000 Å.

11. The method of claim 1 , wherein the semiconductor substrate comprises a recessed feature comprising an exposed layer of tungsten-containing material at the bottom of the recessed feature, wherein the width or diameter of the recessed feature is less than about 150 nm.

12. The method of claim 1 , wherein a single sequence of operations (b)-(e) removes between about 10-50 nm of the tungsten-containing material.

13. The method of claim 1 , wherein the compound that includes tungsten and oxygen is selected from the group consisting of WO x and WOCl x .

Assignees

• Lam Res Corp

Inventors

• Tan Zhongkui
• Fu Qian
• Hsiao Huai-Yu

Classifications

• H10P72/0421

  for drying etching · CPC title

• H10P50/269

  pre- or post-treatments, e.g. anti-corrosion processes · CPC title

• H10P50/71

  using masks for conductive or resistive materials · CPC title

• H10P50/267 Primary

  using plasmas · CPC title

• H10P50/00 Primary

  Etching of wafers, substrates or parts of devices · CPC title