Chemical control features in wafer process equipment

Patent metadata

Field	Value
Publication number	US-10354843-B2
Application number	US-201715581357-A
Country	US
Kind code	B2
Filing date	Apr 28, 2017
Priority date	Sep 21, 2012
Publication date	Jul 16, 2019
Grant date	Jul 16, 2019

Abstract

Gas distribution assemblies are described including an annular body, an upper plate, and a lower plate. The upper plate may define a first plurality of apertures, and the lower plate may define a second and third plurality of apertures. The upper and lower plates may be coupled with one another and the annular body such that the first and second apertures produce channels through the gas distribution assemblies, and a volume is defined between the upper and lower plates.

First claim

What is claimed is:

1. A substrate processing chamber comprising:
a faceplate;
a showerhead comprising:
an annular body comprising:
an inner annular wall located at an inner diameter, an outer annular wall located at an outer diameter, an upper surface, and a lower surface;
a first fluid channel defined in the upper surface that is located in the annular body radially inward of an upper recess; and

an upper plate coupled with the annular body at the upper recess and covering the first fluid channel, wherein the upper plate defines a plurality of first apertures, wherein a remote plasma region is at least partially defined between the faceplate and the showerhead.

2. The substrate processing chamber of claim 1 , further comprising a lower plates are bonded with the lower plate.

3. The substrate processing chamber of claim 1 , further comprising a second fluid channel defined in the upper surface that is located in the annular body radially outward of the first fluid channel, wherein a plurality of ports are defined in a portion of the annular body defining an outer wall of the first fluid channel and an inner wall of the second fluid channel.

4. The substrate processing chamber of claim 3 , wherein the second fluid channel is located radially outward of the upper recess such that the second fluid channel is not covered by the upper plate.

5. The substrate processing chamber of claim 4 , wherein a second upper recess is defined by the annular body proximate a top of the second fluid channel in both the inner wall and an outer wall.

6. The substrate processing chamber of claim 5 , further comprising an annular member positioned within the second upper recess so as to cover the second fluid channel.

7. The substrate processing chamber of claim 3 , wherein the upper recess defines a ledge that intersects the outer wall of the first fluid channel.

8. The substrate processing chamber of claim 3 , further comprising a pair of isolation channels wherein one of the pair of isolation channels is defined in the upper surface of the annular body, and the other of the pair of isolation channels is defined in the lower surface of the annular body, and wherein the pair of isolation channels are vertically aligned with one another.

9. The substrate processing chamber of claim 3 , wherein the second fluid channel is located radially inward of the upper recess such that the second fluid channel is covered by the upper plate.

10. The substrate processing chamber of claim 9 , wherein a portion of the upper plate extends into the second channel below a bottom of the upper recess.

11. The substrate processing chamber of claim 10 , wherein the plurality of ports are angled upward from the second fluid channel to the first fluid channel such that the ports are fluidly accessible below the portion of the upper plate extending into the second channel.

12. The substrate processing chamber of claim 9 , further comprising an isolation channel defined in the lower surface of the annular body.

13. The substrate processing chamber of claim 1 , further comprising an annular temperature channel defined in the annular body and configured to receive a cooling fluid operable to maintain a temperature of the annular body.

14. The substrate processing chamber of claim 1 , further comprising an annular temperature channel defined in the annular body and configured to receive a heating element disposed within the channel and operable to maintain a temperature of the annular body.

15. A semiconductor processing system comprising:
a remote plasma unit; and
a processing chamber, fluidly coupled with the remote plasma unit, the processing chamber comprising:
a faceplate;
a substrate support;
a showerhead comprising:
an annular body comprising:
an inner annular wall located at an inner diameter, an outer annular wall located at an outer diameter, an upper surface, and a lower surface;
an upper recess formed in the upper surface;
a lower recess formed in the lower surface;
a first fluid channel defined in the lower surface that is located in the annular body radially inward of the lower recess;

an upper plate coupled with the annular body at the upper recess, wherein the upper plate defines a plurality of first apertures; and
a lower plate coupled with the annular body at the lower recess, and covering the first fluid channel, the lower plate comprising:
a plurality of second apertures defined therein, wherein the second apertures align with the first apertures defined in the upper plate;
a plurality of third apertures defined therein and located between the second apertures;
wherein the upper plate and the lower plate are coupled with one another such that the first and second apertures are aligned to form a channel through the upper and lower plates

a first plasma region defined between the faceplate and the showerhead; and
a second plasma region defined between the showerhead and the substrate support.

16. The semiconductor processing system of claim 15 , further comprising a second fluid channel defined in the lower surface that is located in the annular body radially outward of the first fluid channel, wherein a plurality of ports are defined in a portion of the annular body defining an outer wall of the first fluid channel and an inner wall of the second fluid channel, wherein the plurality of ports are configured to fluidly couple the second fluid channel with the first fluid channel.

17. The semiconductor processing system of claim 16 , wherein the second fluid channel is located radially inward of the lower recess such that the second fluid channel is covered by the lower plate, and wherein a portion of the lower plate extends into the second channel above a top of the lower recess.

18. The semiconductor processing system of claim 17 , wherein the plurality of ports are angled downward from the second fluid channel to the first fluid channel such that the ports are fluidly accessible above the portion of the lower plate extending into the second channel.

19. The semiconductor processing system of claim 15 , wherein the first apertures comprise a conical shape of decreasing diameter as the first apertures extend through the upper plate, and wherein the second and third apertures comprise a conical shape of increasing diameter as the second and third apertures extend through the lower plate.

20. The semiconductor processing system of claim 15 , wherein each of the second and third apertures comprise at least three sections of different shape or diameter.

Assignees

• Applied Materials Inc

Inventors

• Liang Qiwei
• Chen Xinglong
• Chuc Kien
• Lubomirsky Dmitry
• Park Soonam
• Yang Jang-Gyoo
• Venkataraman Shankar
• Tran Toan
• Hinckley Kimberly
• Garg Saurabh

Classifications

• H10P72/0421

  for drying etching · CPC title

• H10P50/242 Primary

  of Group IV materials · CPC title

• C23C16/452

  by activating reactive gas streams before {their} introduction into the reaction chamber, e.g. by {ionisation} or addition of reactive species · CPC title

• C23C16/45574

  Nozzles for more than one gas · CPC title

• H01J37/32357

  Generation remote from the workpiece, e.g. down-stream · CPC title