Apparatus and method for direct writing of single crystal super alloys and metals

Patent metadata

Field	Value
Publication number	US-10350708-B2
Application number	US-201515506539-A
Country	US
Kind code	B2
Filing date	Aug 24, 2015
Priority date	Aug 26, 2014
Publication date	Jul 16, 2019
Grant date	Jul 16, 2019

Abstract

A method and apparatus for direct writing of single crystal super alloys and metals. The method including heating a substrate to a predetermined temperature below its melting point; using a laser to form a melt pool on a surface of the substrate, wherein the substrate is positioned on a base plate, and wherein the laser and the base plate are movable relative to each other, the laser being used for direct metal deposition; introducing a superalloy powder to the melt pool; and controlling the temperature of the melt pool to maintain a predetermined thermal gradient on a solid and liquid interface of the melt pool so as to form a single crystal deposit on the substrate. The apparatus configured to generally achieve the aforementioned method.

First claim

What is claimed is:

1. A method for direct writing of single crystal alloys, the method comprising:
heating a single crystal seed substrate using a heat source to a predetermined temperature below its melting point;
using a laser separate from the heat source to form a melt pool on a surface of the single crystal seed substrate, wherein the single crystal seed substrate is positioned on a base plate, and wherein the laser and the base plate are movable relative to each other, the laser being used for direct metal deposition;
introducing a superalloy powder to the melt pool, the single crystal seed substrate having substantially the same composition as the superalloy powder; and
controlling the temperature of the melt pool and the single crystal seed substrate using the heat source and the laser to maintain a predetermined thermal gradient at a solid and liquid interface of the melt pool so as to form a single crystal deposit on the single crystal seed substrate, the heat source maintaining a temperature of the single crystal deposit away from the laser.

2. The method of claim 1 , wherein the laser has a variable power source and the heating source has a variable power source, and wherein controlling the temperature of the melt pool using the heat source and the laser comprises adjusting the variable power source of the laser and the variable power source of the heating source.

3. The method of claim 1 , wherein the laser has a variable power output controllable by a laser power controller and the heating source has a variable power output controlled by a heating source controller, and wherein controlling the temperature of the solid and liquid interface of the melt pool comprises:
measuring the temperature of the melt pool;
receiving the temperature measured at a controller;
comparing the temperature measured to a reference temperature; and
adjusting the variable power output of the laser and the variable power output of the heating source.

4. The method of claim 3 , wherein the temperature measured is lower than the reference temperature, and wherein adjusting the variable power output of the laser and the variable power output of the heating source comprises increasing the variable power output of the laser and increasing the variable power output of the heating source.

5. The method of claim 4 , wherein increasing the variable power output of the laser comprises increasing the voltage supplied by the laser power controller, and wherein increasing the variable power output of the heating source comprises increasing the voltage supplied by the heating source controller.

6. The method of claim 3 , wherein the temperature measured is higher than the reference temperature, and wherein adjusting the variable power output of the laser and the variable power output of the heating source comprises decreasing the variable power output of the laser and decreasing the variable power output of the heating source.

7. The method of claim 6 , wherein decreasing the variable power output of the laser comprises decreasing the voltage supplied by the laser power controller.

8. The method of claim 1 , wherein the laser and the base plate are movable in three directions with respect to each other.

9. The method of claim 1 , further comprising:
moving the laser in a horizontal plane with respect to the substrate.

10. The method of claim 1 , further comprising:
moving the base plate in a vertical direction with respect to the laser.

11. An apparatus for direct writing of single crystal alloys comprising:
a laser having a power output;
a base plate configured for holding a single-crystal seed substrate thereon;
a head configured to supply a stream of superalloy powder onto the substrate;
an induction heating source positioned to heat the single-crystal seed substrate on the base plate to a predetermined temperature; and
a controller configured to control the power output of the laser and the induction heating source to maintain the predetermined temperature of the base plate and a melt pool on the substrate, wherein the controller is configured to be responsive to a measured temperature of at least one of the melt pool on the substrate and the superalloy powder.

12. The apparatus of claim 11 , further comprising:
a pyrometer configured to measure the temperature of the at least one of the melt pool on the substrate and the superalloy powder.

13. The apparatus of claim 12 , wherein the pyrometer is in communication with the controller.

14. The apparatus of claim 13 , wherein the laser and the induction heating source have a variable power output controlled by the controller.

15. The apparatus of claim 14 , wherein the controller is a laser controller and an induction heating source controller.

16. The apparatus of claim 11 , wherein the laser passes through the DMD head onto the substrate to form a melt pool.

17. The apparatus of claim 11 , wherein the laser and the base plate are movable in three directions with respect to each other.

18. The apparatus of claim 11 , wherein the laser is movable in a horizontal plane with respect to the substrate.

19. The apparatus of claim 11 , wherein the base plate is movable in a vertical direction with respect to the laser.

Assignees

• Univ Michigan Regents

Inventors

• Mazumder Jyotirmoy
• Choi Jeongyong

Classifications

• B23K2101/001

  Turbines · CPC title

• B33Y30/00

  Apparatus for additive manufacturing; Details thereof or accessories therefor · CPC title

• B23K26/034 Primary

  Observing the temperature of the workpiece · CPC title

• B23K26/083

  Devices involving movement of the workpiece in at least one axial direction · CPC title

• C22F1/10

  of nickel or cobalt or alloys based thereon · CPC title