Ion beam apparatus including slit structure for extracting ion beam, etching method using the same, and method for manufacturing magnetic memory device using the ion beam apparatus

Patent metadata

Field	Value
Publication number	US-10347459-B2
Application number	US-201715649327-A
Country	US
Kind code	B2
Filing date	Jul 13, 2017
Priority date	Dec 6, 2016
Publication date	Jul 9, 2019
Grant date	Jul 9, 2019

Abstract

An ion beam apparatus includes a source part generating plasma therein, a process part in which a process using an ion beam is performed, and a slit structure provided between the source part and the process part and extracting the ion beam from the plasma. The slit structure includes at least one electrode structure. The electrode structure has a slit penetrating the electrode structure and extending in a first direction. The ion beam is irradiated onto a substrate at an incident angle through the slit. The incident angle of the ion beam is adjusted by rotating the electrode structure on a rotation axis parallel to the first direction.

First claim

What is claimed is:

1. An ion beam apparatus, comprising:
a source part generating plasma therein;
a process part in which a process using an ion beam is performed; and
a slit structure provided between the source part and the process part, the slit structure extracting the ion beam from the plasma, the slit structure including at least one electrode structure having a slit penetrating the electrode structure and extending in a first direction, wherein the at least one electrode structure includes a pair of first electrodes spaced apart from each other in a second direction intersecting the first direction, the pair of first electrodes having a first slit extending in the first direction therebetween, wherein
the ion beam is irradiated onto a substrate at an incident angle through the slit, and
the incident angle of the ion beam is adjusted by rotating the electrode structure on a rotation axis parallel to the first direction.

2. The ion beam apparatus as claimed in claim 1 , wherein:
the slit structure further includes a plate part provided between the source part and the process part,
the electrode structure has a line shape extending in the first direction,
the electrode structure penetrates the plate part, and
the first direction is parallel to a flat surface of the plate part.

3. The ion beam apparatus as claimed in claim 2 , wherein the plate part is an insulator.

4. The ion beam apparatus as claimed in claim 1 , wherein the electrode structure includes:
a pair of second electrodes spaced apart from each other in the second direction, the pair of second electrodes having a second slit extending in the first direction therebetween,
wherein the pair of second electrodes overlap with the pair of first electrodes in a third direction perpendicular to the first and second directions, and
wherein the first slit and the second slit overlap with each other in the third direction to define the slit.

5. The ion beam apparatus as claimed in claim 4 , wherein each of the pair of first electrodes and the pair of second electrodes has a line shape extending in the first direction.

6. The ion beam apparatus as claimed in claim 5 , wherein each of the pair of second electrodes overlaps a corresponding one of the pair of first electrodes in the third direction.

7. The ion beam apparatus as claimed in claim 4 , wherein a first voltage applied to the pair of first electrodes is different from a second voltage applied to the pair of second electrodes.

8. The ion beam apparatus as claimed in claim 4 , wherein:
the electrode structure further includes a pair of insulators spaced apart from each other in the second direction,
the pair of first electrodes and the pair of second electrodes are provided between the pair of insulators, and
each of the pair of insulators is coupled to an end portion of a corresponding one of the pair of first electrodes and an end portion of a corresponding one of the pair of second electrodes.

9. The ion beam apparatus as claimed in claim 4 , wherein:
the electrode structure further includes a pair of third electrodes spaced apart from each other in the second direction, the pair of third electrodes having a third slit extending in the first direction therebetween,
the pair of third electrodes overlap the pair of first electrodes and the pair of second electrodes in the third direction,
the pair of second electrodes are between the pair of first electrodes and the pair of third electrodes, and
wherein the first slit, the second slit, and the third slit overlap each other in the third direction to define the slit.

10. The ion beam apparatus as claimed in claim 9 , wherein a first voltage applied to the pair of first electrodes, a second voltage applied to the pair of second electrodes, and a third voltage applied to the pair of third electrodes are different from each other.

11. The ion beam apparatus as claimed in claim 1 , wherein:
the slit structure includes a plurality of electrode structures spaced apart from each other in a second direction intersecting the first direction,
each of the plurality of electrode structures is rotatable on its rotation axis parallel to the first direction, and
a rotation direction of an odd-numbered electrode structure of the plurality of electrode structures is opposite to a rotation direction of an even-numbered electrode structure of the plurality of electrode structures.

12. The ion beam apparatus as claimed in claim 11 , wherein:
the slit structure further includes a plate part provided between the source part and the process part,
each of the plurality of electrode structures has a line shape extending in the first direction, and
each of the plurality of electrode structures penetrates the plate part, and
the first direction is parallel to a flat surface of the plate part.

13. The ion beam apparatus as claimed in claim 11 , wherein the ion beam includes:
a first ion beam irradiated onto the substrate through the slit of the odd-numbered electrode structure; and
a second ion beam irradiated onto the substrate through the slit of the even-numbered electrode structure, wherein the first ion beam and the second ion beam are symmetrically irradiated.

14. The ion beam apparatus as claimed in claim 1 , further comprising:
a stage in the process part and on which the substrate is loaded,
wherein the first direction is parallel to an upper surface of the substrate, and
wherein the stage changes a horizontal position of the substrate along a second direction which is parallel to the upper surface of the substrate and intersects the first direction.

15. The ion beam apparatus as claimed in claim 1 , wherein first electrode of the pair of first electrodes are insulated from one another.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Park Jongchul

Classifications

• H01J37/08

  Ion sources; Ion guns · CPC title

• H01J2237/083

  Beam forming · CPC title

• H01J37/32

  Gas-filled discharge tubes (heating by discharge H05B) · CPC title

• H01J37/3053

  for evaporating or etching · CPC title

• H01J37/04 Primary

  Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement {(H01J37/32009, H01J37/32623, H01J37/3266, H01J37/32697 take precedence; electron or ion-optical systems for localised treatment of objects H01J37/3007)} · CPC title