Composition for polishing silicon wafers

US10344185B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10344185-B2
Application numberUS-201515309281-A
CountryUS
Kind codeB2
Filing dateJun 17, 2015
Priority dateJun 24, 2014
Publication dateJul 9, 2019
Grant dateJul 9, 2019

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

Provided is a composition for polishing silicon wafers, having an excellent effect of reducing haze and having low agglomerating property. A composition for polishing silicon wafers provided here includes: an amido group-containing polymer A; and an organic compound B not containing an amido group. The amido group-containing polymer A has, on a main chain, a building block S derived from a monomer represented by General Formula (1). Molecular weight M A of the amido group-containing polymer A and molecular weight M B of the organic compound B have a relation satisfying 200≤M B <M A .

First claim

Opening claim text (preview).

The invention claimed is: 1. A composition for polishing silicon wafers used in the presence of abrasives, comprising: a silicon-wafer polishing removal accelerator; an amido group-containing polymer A; an organic compound B not containing an amido group; and water, wherein the abrasives are colloidal silica, and wherein the amido group-containing polymer A having, on a main chain, a building block S derived from a monomer represented by General Formula (1), in the General Formula (1), R 1 is a hydrogen atom; an alkyl group, an alkenyl group, an alkynyl group, an aralkyl group, an alkoxy group, an alkoxyalkyl group, or an alkylol group having the number of carbon atoms of 1 to 6; an acetyl group; a phenyl group; a benzyl group; a chloro group; a difluoromethyl group; a trifluoromethyl group; or a cyano group, X is (CH 2 ) n , where n is an integer of 4 to 6, (CH 2 ) 2 O(CH 2 ) 2 or (CH 2 ) 2 S(CH 2 ) 2 , the organic compound B being a nonionic compound and selected from oxyalkylene polymer, polyoxyalkylene adduct, and copolymers of plurality types of oxyalkylenes, the amido group-containing polymer A having molecular weight M A and the organic compound B having molecular weight MB, the molecular weight M A and the molecular weight MB having a relation satisfying 200≤M B <M A . 2. The composition for polishing silicon wafers according to claim 1 , wherein a ratio (MA/MB) of the molecular weight MA of the amido group-containing polymer A to the molecular weight MB of the organic compound B is more than 5. 3. The composition for polishing silicon wafers according to claim 1 , wherein the molecular weight MB of the organic compound B is less than 1×10 4 . 4. The composition for polishing silicon wafers according to claim 1 , wherein the molecular weight MA of the amido group-containing polymer A is less than 50×10 4 . 5. The composition for polishing silicon wafers according to claim 1 , wherein in the General Formula (1), R 1 is a hydrogen atom or a methyl group. 6. The composition for polishing silicon wafers according to claim 1 , wherein in the General Formula (1), X is (CH 2 ) 2 O(CH 2 ) 2 . 7. The composition for polishing silicon wafers according to claim 1 , wherein the proportion of the mole number of the building block S relative to the mole number of all building blocks contained in the molecular structure of the polymer is 97% by mole or more. 8. The composition for polishing silicon wafers according to claim 1 , wherein the pH of the composition is 9.5 or more and 12.0 or less. 9. The composition for polishing silicon wafers according to claim 1 , wherein the molecular weight MB of the organic compound B is 1.8×10 4 or less. 10. The composition for polishing silicon wafers according to claim 1 , wherein the content of the amido group-containing polymer A in the polishing composition is greater than zero to 0.1% by mass.

Assignees

Inventors

Classifications

  • by polishing · CPC title

  • by edge treatment, e.g. chamfering · CPC title

  • by wet cleaning only (H10P70/52 takes precedence) · CPC title

  • of semiconductor materials · CPC title

  • Lapping machines or devices; Accessories (B24B3/00 takes precedence) · CPC title

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What does patent US10344185B2 cover?
Provided is a composition for polishing silicon wafers, having an excellent effect of reducing haze and having low agglomerating property. A composition for polishing silicon wafers provided here includes: an amido group-containing polymer A; and an organic compound B not containing an amido group. The amido group-containing polymer A has, on a main chain, a building block S derived from a mono…
Who is the assignee on this patent?
Fujimi Inc
What technology area does this patent fall under?
Primary CPC classification C09G1/04. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Jul 09 2019 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 7 related publications on this page (citations in our corpus or others sharing the same primary CPC).