Polishing composition and method for producing polished article
US-9566685-B2 · Feb 14, 2017 · US
US10344185B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10344185-B2 |
| Application number | US-201515309281-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 17, 2015 |
| Priority date | Jun 24, 2014 |
| Publication date | Jul 9, 2019 |
| Grant date | Jul 9, 2019 |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
Provided is a composition for polishing silicon wafers, having an excellent effect of reducing haze and having low agglomerating property. A composition for polishing silicon wafers provided here includes: an amido group-containing polymer A; and an organic compound B not containing an amido group. The amido group-containing polymer A has, on a main chain, a building block S derived from a monomer represented by General Formula (1). Molecular weight M A of the amido group-containing polymer A and molecular weight M B of the organic compound B have a relation satisfying 200≤M B <M A .
Opening claim text (preview).
The invention claimed is: 1. A composition for polishing silicon wafers used in the presence of abrasives, comprising: a silicon-wafer polishing removal accelerator; an amido group-containing polymer A; an organic compound B not containing an amido group; and water, wherein the abrasives are colloidal silica, and wherein the amido group-containing polymer A having, on a main chain, a building block S derived from a monomer represented by General Formula (1), in the General Formula (1), R 1 is a hydrogen atom; an alkyl group, an alkenyl group, an alkynyl group, an aralkyl group, an alkoxy group, an alkoxyalkyl group, or an alkylol group having the number of carbon atoms of 1 to 6; an acetyl group; a phenyl group; a benzyl group; a chloro group; a difluoromethyl group; a trifluoromethyl group; or a cyano group, X is (CH 2 ) n , where n is an integer of 4 to 6, (CH 2 ) 2 O(CH 2 ) 2 or (CH 2 ) 2 S(CH 2 ) 2 , the organic compound B being a nonionic compound and selected from oxyalkylene polymer, polyoxyalkylene adduct, and copolymers of plurality types of oxyalkylenes, the amido group-containing polymer A having molecular weight M A and the organic compound B having molecular weight MB, the molecular weight M A and the molecular weight MB having a relation satisfying 200≤M B <M A . 2. The composition for polishing silicon wafers according to claim 1 , wherein a ratio (MA/MB) of the molecular weight MA of the amido group-containing polymer A to the molecular weight MB of the organic compound B is more than 5. 3. The composition for polishing silicon wafers according to claim 1 , wherein the molecular weight MB of the organic compound B is less than 1×10 4 . 4. The composition for polishing silicon wafers according to claim 1 , wherein the molecular weight MA of the amido group-containing polymer A is less than 50×10 4 . 5. The composition for polishing silicon wafers according to claim 1 , wherein in the General Formula (1), R 1 is a hydrogen atom or a methyl group. 6. The composition for polishing silicon wafers according to claim 1 , wherein in the General Formula (1), X is (CH 2 ) 2 O(CH 2 ) 2 . 7. The composition for polishing silicon wafers according to claim 1 , wherein the proportion of the mole number of the building block S relative to the mole number of all building blocks contained in the molecular structure of the polymer is 97% by mole or more. 8. The composition for polishing silicon wafers according to claim 1 , wherein the pH of the composition is 9.5 or more and 12.0 or less. 9. The composition for polishing silicon wafers according to claim 1 , wherein the molecular weight MB of the organic compound B is 1.8×10 4 or less. 10. The composition for polishing silicon wafers according to claim 1 , wherein the content of the amido group-containing polymer A in the polishing composition is greater than zero to 0.1% by mass.
by polishing · CPC title
by edge treatment, e.g. chamfering · CPC title
by wet cleaning only (H10P70/52 takes precedence) · CPC title
of semiconductor materials · CPC title
Lapping machines or devices; Accessories (B24B3/00 takes precedence) · CPC title
Related publications grouped by family.
Answers are generated from the same data shown on this page.