Polishing composition and method for producing polished article

Patent metadata

Field	Value
Publication number	US-9566685-B2
Application number	US-201414769377-A
Country	US
Kind code	B2
Filing date	Feb 14, 2014
Priority date	Feb 21, 2013
Publication date	Feb 14, 2017
Grant date	Feb 14, 2017

Abstract

This invention provides a polishing composition comprising an abrasive, a water-soluble polymer and water. The water-soluble polymer comprises a polymer A having an adsorption ratio of lower than 5% and a polymer B having an adsorption ratio of 5% or higher, but lower than 95% based on a prescribed adsorption ratio measurement. Herein, the polymer B is selected from polymers excluding hydroxyethyl celluloses.

First claim

The invention claimed is:

1. A polishing composition comprising an abrasive, a water-soluble polymer and water, the composition comprising, as the water-soluble polymer,
a polymer A having an adsorption ratio of lower than 5% and a polymer B having an adsorption ratio of 5% or higher, but lower than 95% based on an adsorption ratio measurement as follows:

(1) a test solution L0 is obtained, comprising 0.018% by mass of a measured polymer and 0.01% by mass of ammonia with the rest being water;
(2) a test solution L1 is obtained, comprising 0.18% by mass of the abrasive as well as 0.018% by mass of the measured polymer and 0.01% by mass of ammonia with the rest being water;
(3) the test solution L1 is centrifuged to precipitate the abrasive; and
(4) the measured polymer in the test solution L0 has a mass W0, the measured polymer in the supernatant of the centrifuged test solution L1 has a mass W1, and the measured polymer has an adsorption ratio determined by the next equation:
Adsorption ratio (%)=[( W 0− W 1)/ W 0]×100;

wherein, the polymer B is selected from polymers excluding hydroxyethyl celluloses.

2. The polishing composition according to claim 1 , wherein the polymer B has a weight average molecular weight (Mw) to number average molecular weight (Mn) ratio (Mw/Mn) of 5.0 or lower.

3. The polishing composition according to claim 1 , wherein the polymer B has a weight average molecular weight (Mw) of 1×10 4 or larger, but smaller than 25×10 4 .

4. The polishing composition according to claim 1 , wherein the polymer B is a nonionic polymer.

5. The polishing composition according to claim 1 , wherein the polymer B comprises a pendant group having an amide bond.

6. The polishing composition according to claim 1 , wherein the polymer A is a polyvinyl alcohol.

7. The polishing composition according to claim 1 , further comprising a basic compound.

8. The polishing composition according to claim 1 used for polishing a silicon wafer.

9. A method for producing a polished article, the method comprising:
obtaining a polishing liquid that comprises the polishing composition according to claim 1 ;
supplying the polishing liquid to a polishing object; and
polishing a surface of the polishing object with the polishing liquid.

10. The polished article production method according to claim 9 , wherein the polishing object is a silicon wafer.

Assignees

• Fujimi Inc

Inventors

• Tsuchiya Kohsuke
• Tansho Hisanori

Classifications

• H10P90/129

  by polishing · CPC title

• H10P52/402

  of semiconductor materials · CPC title

• H01L21/30625

  Electricity · mapped topic

• B24B37/044 Primary

  characterised by the composition of the lapping agent · CPC title

• H01L21/02024

  Electricity · mapped topic