Power semiconductor module and method for producing a power semiconductor module
US-10020237-B2 · Jul 10, 2018 · US
US10340217B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10340217-B2 |
| Application number | US-201715797027-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 30, 2017 |
| Priority date | Feb 24, 2017 |
| Publication date | Jul 2, 2019 |
| Grant date | Jul 2, 2019 |
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A semiconductor device includes a semiconductor chip, an electrode electrically connected to the semiconductor chip, the electrode including a looped portion, a cylindrical electrode including a main portion having a screw thread formed therein and a narrow portion continuous with the main portion, the narrow portion having a smaller width than the main portion, the cylindrical electrode being electrically connected to the electrode by the narrow portion being inserted into the looped portion, and a case for the semiconductor chip and the electrode, the case contacting the main portion while causing the screw thread and a connecting portion between the looped portion and the cylindrical electrode to be exposed.
Opening claim text (preview).
What is claimed is: 1. A semiconductor device comprising: a semiconductor chip; an electrode electrically connected to the semiconductor chip, the electrode including a looped portion; a cylindrical electrode including a main portion having a screw thread formed therein and a narrow portion continuous with the main portion, the narrow portion having a smaller width than the main portion, the cylindrical electrode being electrically connected to the electrode by the narrow portion being inserted into the looped portion; and a case for the semiconductor chip and the electrode, the case contacting the main portion and a top surface of the looped portion, while causing the screw thread and a connecting portion between the looped portion and the cylindrical electrode to be exposed. 2. The semiconductor device according to claim 1 , wherein an inside wall of the looped portion contacts the narrow portion. 3. The semiconductor device according to claim 1 , wherein the cylindrical electrode includes a wide portion which is connected to the narrow portion and has a larger width than the narrow portion, and the top surface of the looped portion contacts the main portion, and a bottom surface of the looped portion contacts the wide portion. 4. The semiconductor device according to claim 3 , wherein an outside diameter of the looped portion is larger than an outside diameter of the wide portion. 5. The semiconductor device according to claim 1 , wherein the looped portion is circular in planar view. 6. The semiconductor device according to claim 1 , wherein an outside diameter of the looped portion is equal to or more than a width of the main portion. 7. The semiconductor device according to claim 1 , wherein the cylindrical electrode has a rib on a side surface of the main portion, and the case covers the rib. 8. The semiconductor device according to claim 1 , wherein a screw thread is formed on a side wall of the narrow portion, a screw thread is formed on an inside wall of the looped portion, and the narrow portion and the looped portion are screwed together. 9. The semiconductor device according to claim 1 , wherein the narrow portion and the looped portion are in contact with each other by snap fit. 10. The semiconductor device according to claim 1 , wherein the semiconductor chip is made of a wide bandgap semiconductor. 11. The semiconductor device according to claim 10 , wherein the wide bandgap semiconductor is any one of silicon carbide, a gallium nitride material, and diamond.
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