Film forming method for metal film and film forming apparatus therefor

Patent metadata

Field	Value
Publication number	US-10337116-B2
Application number	US-201715597811-A
Country	US
Kind code	B2
Filing date	May 17, 2017
Priority date	May 23, 2016
Publication date	Jul 2, 2019
Grant date	Jul 2, 2019

Abstract

In a film forming method, in a state where a metal solution is sealed in a first accommodation chamber of a housing with a solid electrolyte membrane and a fluid is sealed in a second accommodation chamber of a placing table with a thin film, a substrate is placed on the placing table and the placing table and the housing are moved relative to each other to cause the substrate to be interposed between the solid electrolyte membrane and the thin film, the solid electrolyte membrane and the thin film are pressed against the substrate interposed therebetween to cause the solid electrolyte membrane and the thin film to conform to a surface and a rear surface of the substrate, thereby forming a metal film.

First claim

What is claimed is:

1. A film forming method for a metal film comprising:
placing a substrate which is a cathode on a placing table;
causing a metal solution containing metal ions to be in a state of being disposed between an anode and a solid electrolyte membrane, causing the metal solution to be in a state of being sealed in a first accommodation chamber of a housing with the solid electrolyte membrane so as to cause the metal solution to be disposed on a surface of the substrate via the solid electrolyte membrane, causing a fluid to be in a state of being sealed in a second accommodation chamber of the placing table with a thin film so as to cause the fluid to be disposed on a rear surface of the substrate positioned on a side opposite to the surface on which the metal film is formed, via the thin film having flexibility, and causing the substrate to be interposed between the solid electrolyte membrane and the thin film by moving the placing table and the housing relative to each other in a state in which the substrate is placed on the placing table;
pressing the solid electrolyte membrane and the thin film against the substrate interposed between the solid electrolyte membrane and the thin film to cause the solid electrolyte membrane to conform to the surface of the substrate and to cause the thin film to conform to the rear surface of the substrate; and applying a voltage between the anode and the substrate in a state in which the solid electrolyte membrane is brought into contact with the surface of the substrate placed on the placing table to reduce the metal ions contained in the solid electrolyte membrane and cause a metal derived from the metal ions to deposit on the surface of the substrate so as to form the metal film on the surface of the substrate, wherein
a plurality of first conductor portions on which the metal film is formed are formed on the surface of the substrate;
second conductor portions electrically connected to the first conductor portions are formed on the rear surface of the substrate or a side surface of the substrate;
a thin film in which a surface on which the substrate is placed has conductivity is used as the thin film; and
the thin film is brought into contact with the second conductor portions by pressing the thin film against the rear surface of the substrate, and the metal film is formed on the first conductor portions by applying the voltage between the thin film and the anode.

2. The film forming method according to claim 1 , wherein
the solid electrolyte membrane and the thin film are pressed by increasing a pressure of the metal solution in the first accommodation chamber or a pressure of the fluid in the second accommodation chamber.

3. The film forming method according to claim 2 , further comprising:
restricting relative displacement between the housing and the placing table in the state in which the substrate is interposed between the solid electrolyte membrane and the thin film,
wherein the metal film is formed while pressing the solid electrolyte membrane and the thin film in the state in which the displacement is restricted.

4. The film forming method according to claim 1 , wherein
recesses are formed on the rear surface of the substrate, and the second conductor portions are formed at bottom surfaces of the recesses.

Assignees

• Toyota Motor Co Ltd

Inventors

• Sato Yuki
• Hiraoka Motoki
• Iisaka Hirofumi

Classifications

• C25D3/38

  of copper · CPC title

• C25D17/14

  for pad-plating · CPC title

• C25D17/002 Primary

  Cell separation, e.g. membranes, diaphragms · CPC title

• C25D17/005

  Contacting devices · CPC title

• C25D3/46

  of silver · CPC title