Semiconductor device

Patent metadata

Field	Value
Publication number	US-10334196-B2
Application number	US-201615393635-A
Country	US
Kind code	B2
Filing date	Dec 29, 2016
Priority date	Jan 25, 2016
Publication date	Jun 25, 2019
Grant date	Jun 25, 2019

Abstract

A semiconductor device that can extend the range of adaptable sampling rate when performing analog/digital conversion is provided. The semiconductor device includes a plurality of sample-and-hold circuits storing an analog signal and a plurality of converter circuits having a function of converting the analog signal stored in the sample-and-hold circuit into a digital signal. The sample-and-hold circuit includes a switch and a capacitor that is supplied with an analog signal through the switch. The switch includes an oxide semiconductor in a channel formation region.

First claim

What is claimed is:

1. A semiconductor device comprising:
a switch;
a capacitor supplied with a potential of an analog signal through the switch; and
a circuit configured to convert the analog signal supplied to the capacitor into a digital signal,
wherein a transistor included in the switch includes an oxide semiconductor in a channel formation region,
wherein the transistor included in the switch includes a first gate electrode and a second gate electrode overlapping with the first gate electrode with the channel formation region interposed therebetween, and
wherein the first gate electrode is electrically connected to the second gate electrode.

2. A semiconductor device comprising:
a first sample-and-hold circuit;
a second sample-and-hold circuit;
a first converter circuit;
a second converter circuit; and
a digital circuit,
wherein the first sample-and-hold circuit includes a first switch and a first capacitor supplied with a potential of a first analog signal through the first switch,
wherein the first converter circuit is configured to convert the first analog signal supplied to the first capacitor into a first digital signal, convert the first digital signal into a second analog signal, and generate a third analog signal by subtracting a potential of the second analog signal from the potential of the first analog signal,
wherein the second sample-and-hold circuit includes a second switch and a second capacitor supplied with a potential of the third analog signal through the second switch,
wherein the second converter circuit is configured to convert the third analog signal supplied to the second capacitor into a second digital signal, convert the second digital signal into a fourth analog signal, generate a fifth analog signal by subtracting a potential of the fourth analog signal from the potential of the third analog signal,
wherein the digital circuit is configured to generate a third digital signal corresponding to the first analog signal by using the first digital signal and the second digital signal,
wherein a first transistor included in the first switch includes an oxide semiconductor in a channel formation region, and
wherein a second transistor included in the second switch includes an oxide semiconductor in a channel formation region.

3. The semiconductor device according to claim 2 ,
wherein the first transistor includes a first gate electrode and a second gate electrode overlapping with the first gate electrode with the channel formation region of the first transistor interposed therebetween, and
wherein the first gate electrode is electrically connected to the second gate electrode.

4. A semiconductor device comprising:
a first sample-and-hold circuit;
a second sample-and-hold circuit;
a first converter circuit;
a second converter circuit; and
a digital circuit,
wherein an output terminal of the first sample-and-hold circuit is electrically connected to an input terminal of the first converter circuit,
wherein an output terminal of the first converter circuit is electrically connected to an input terminal of the second sample-and-hold circuit,
wherein an output terminal of the second sample-and-hold circuit is electrically connected to an input terminal of the second converter circuit,
wherein the first sample-and-hold circuit includes a first transistor and a first capacitor,
wherein the second sample-and-hold circuit includes a second transistor and a second capacitor,
wherein the digital circuit is configured to generate a digital signal by using a digital signal from the first converter circuit and a digital signal from the second converter circuit,
wherein the first transistor includes an oxide semiconductor in a channel formation region, and
wherein the second transistor includes an oxide semiconductor in a channel formation region.

5. The semiconductor device according to claim 4 ,
wherein the first transistor includes a first gate electrode and a second gate electrode overlapping with the first gate electrode with the channel formation region of the first transistor interposed therebetween, and
wherein the first gate electrode is electrically connected to the second gate electrode.

6. The semiconductor device according to claim 1 , wherein the oxide semiconductor includes indium, gallium, and zinc.

7. The semiconductor device according to claim 2 , wherein each of the oxide semiconductor of the first transistor and the oxide semiconductor of the second transistor includes indium, gallium, and zinc.

8. The semiconductor device according to claim 4 , wherein each of the oxide semiconductor of the first transistor and the oxide semiconductor of the second transistor includes indium, gallium, and zinc.

9. The semiconductor device according to claim 1 , wherein one of a source and a drain of the transistor is electrically connected to the circuit and one of a pair of electrodes of the capacitor.

10. The semiconductor device according to claim 2 , wherein one of a source and a drain of the first transistor is electrically connected to an output terminal of the first sample-and-hold circuit and one of a pair of electrodes of the first capacitor.

11. The semiconductor device according to claim 4 , wherein one of a source and a drain of the first transistor is electrically connected to the output terminal of the first sample-and-hold circuit and one of a pair of electrodes of the first capacitor.

12. The semiconductor device according to claim 1 , wherein the circuit includes an analog/digital converter circuit, a digital/analog converter circuit, and a subtraction circuit.

13. The semiconductor device according to claim 2 , wherein each of the first converter circuit and the second converter circuit includes an analog/digital converter circuit, a digital/analog converter circuit, and a subtraction circuit.

14. The semiconductor device according to claim 4 , wherein each of the first converter circuit and the second converter circuit includes an analog/digital converter circuit, a digital/analog converter circuit, and a subtraction circuit.

15. The semiconductor device according to claim 4 ,
wherein the first capacitor is configured to be supplied with a potential of a first analog signal through the first transistor,
wherein the first converter circuit is configured to convert the first analog signal supplied to the first capacitor into a first digital signal, convert the first digital signal into a second analog signal, and generate a third analog signal by subtracting a potential of the second analog signal from the potential of the first analog signal,
wherein the second capacitor is configured to be supplied with a potential of the third analog signal through the second transistor, and
wherein the second converter circuit is configured to convert the third analog signal supplied to the second capacitor into a second digital signal, convert the second digital signal into a fourth analog signal, generate a fifth analog signal by subtracting a potential of the fourth analog signal from the potential of the third analog signal.

Assignees

• Semiconductor Energy Lab

Inventors

• Katagiri Haruki

Classifications

• G06K19/07701 Primary

  the record carrier comprising an interface suitable for human interaction · CPC title

• H04N25/76

  Addressed sensors, e.g. MOS or CMOS sensors · CPC title

• H01L27/092

  Electricity · mapped topic

• H01L27/1225

  Electricity · mapped topic

• H04N5/378 Primary

  Electricity · mapped topic