Metal gates for semiconductor devices and method thereof
US-2024429281-A1 · Dec 26, 2024 · US
Electricity
Electricity · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H01L27/092 |
| Official title | — |
| Display label | Electricity (mapped technology topic) |
| Total patents | 5,673 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is rapidly declining.
| Year | Patents |
|---|---|
| 2015 | 393 |
| 2016 | 458 |
| 2017 | 568 |
| 2018 | 570 |
| 2019 | 639 |
| 2020 | 624 |
| 2021 | 479 |
| 2022 | 499 |
| 2023 | 544 |
| 2024 | 736 |
| 2025 | 163 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Static random access memory device with stacked fets
US-2024431087-A1 · Dec 26, 2024 · US
Semiconductor structure with reduced leakage current and method for manufacturing the same
US-2024413223-A1 · Dec 12, 2024 · US
Semiconductor device
US-2024413252-A1 · Dec 12, 2024 · US
Semiconductor device manufacturing on assembled wafer
US-2024321883-A1 · Sep 26, 2024 · US
Dual dielectric pillar fork sheet device
US-12002808-B2 · Jun 4, 2024 · US
Integrated Standard Cell with Contact Structure
US-2024047459-A1 · Feb 8, 2024 · US
Self-aligned metal gate for multigate device and method of forming thereof
US-2024030066-A1 · Jan 25, 2024 · US
Semiconductor device
US-2015380400-A1 · Dec 31, 2015 · US
Metal gate semiconductor device
US-9219124-B2 · Dec 22, 2015 · US
N/p boundary effect reduction for metal gate transistors
US-2015364459-A1 · Dec 17, 2015 · US
Nanosheet fets with stacked nanosheets having smaller horizontal spacing than vertical spacing for large effective width
US-2015364546-A1 · Dec 17, 2015 · US
Semiconductor chip including digital logic circuit including at least six transistors with some transistors forming cross-coupled transistor configuration and associated methods
US-9213792-B2 · Dec 15, 2015 · US
Semiconductor device, method for manufacturing same, and nonvolatile semiconductor memory device
US-9209171-B2 · Dec 8, 2015 · US
Circuit element including a layer of a stress-creating material providing a variable stress and method for the formation thereof
US-9209174-B2 · Dec 8, 2015 · US
Method of forming a semiconductor die
US-9209090-B2 · Dec 8, 2015 · US
Cmos compatible thermopile with low impedance contact
US-2015349023-A1 · Dec 3, 2015 · US
Gate structures for cmos based integrated circuit products
US-2015348970-A1 · Dec 3, 2015 · US
Delay line circuits and semiconductor integrated circuits
US-2015349766-A1 · Dec 3, 2015 · US
Semiconductor device
US-2015325708-A1 · Nov 12, 2015 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H01L27/092?
- CPC H01L27/092 is the Cooperative Patent Classification code for “Electricity.”
- How many patents are filed under CPC H01L27/092 (Electricity)?
- Our database includes 5,673 publications tagged with this CPC code.
- Is patent activity under CPC H01L27/092 growing?
- Publication counts under this code: 736 in 2024 vs 163 in 2025 (latest complete years).