Functional optical device that integrates optical waveguide with light-receiving element on semiconductor substrate

Patent metadata

Field	Value
Publication number	US-10331007-B2
Application number	US-201815909263-A
Country	US
Kind code	B2
Filing date	Mar 1, 2018
Priority date	Mar 3, 2017
Publication date	Jun 25, 2019
Grant date	Jun 25, 2019

Abstract

A functional optical device is disclosed. The functional optical device integrates a coupling unit, a waveguide photodiode (PD) and an optical waveguide on a semiconductor substrate. The coupling unit extracts an optical signal by performing interference of signal light with local light. The optical waveguide carries the optical signal from the coupling unit to the waveguide PD. The semiconductor substrate provides a heavily doped conducting layer and a buffer layer that is un-doped or lightly doped with n-type impurities by density smaller than density of impurities in the heavily doped conducting layer. The conducting layer and the buffer layer continuously and evenly extend from the optical waveguide to the waveguide PD.

First claim

What is claimed is:

1. A functional optical device that extracts information contained in signal light by interfering between the signal light with local light, the functional optical device comprising:
a first semiconductor layer having n-type conduction;
a light-receiving element provided on the first semiconductor layer, the light-receiving element providing an absorption layer and a second semiconductor layer having p-type conduction the absorption layer being provided between the first semiconductor layer and the second semiconductor layer;
an optical waveguide provided on the first semiconductor layer, the optical waveguide including a core layer and a cladding layer, the core layer optically coupling with the absorption layer in the light-receiving element; and
a third semiconductor layer on the first semiconductor layer,
wherein both of the absorption layer in the light-receiving element and the core layer in the optical waveguide are provided on the third semiconductor layer, and
wherein the third semiconductor layer is doped with impurities by density smaller than density of impurities doped in the first semiconductor layer.

2. The functional optical device according to claim 1 ,
wherein the third semiconductor layer continuously extends from the light-receiving element to the optical waveguide.

3. The functional optical device according to claim 1 ,
wherein the third semiconductor layer has the density of the smaller than 1×10 16 cm −3 .

4. The functional optical device according to claim 1 ,
wherein the third semiconductor layer has bandgap energy greater than bandgap energy of the absorption layer but equal to or smaller than bandgap energy of the first semiconductor layer.

Assignees

• Sedi Inc

Inventors

• Yoneda Yoshihiro
• Okimoto Takuya

Classifications

• G02F2202/06

  dopant · CPC title

• G02B6/2813

  based on multimode interference effect, i.e. self-imaging · CPC title

• G02F1/2257 Primary

  the optical waveguides being made of semiconducting material · CPC title

• G02F1/0353

  involving an electro-optic TE-TM mode conversion · CPC title

• G02B6/14

  Mode converters · CPC title