Semiconductor optical device integrating photodiode with optical waveguide and method of forming the same

Patent metadata

Field	Value
Publication number	US-9893100-B2
Application number	US-201615193814-A
Country	US
Kind code	B2
Filing date	Jun 27, 2016
Priority date	Jun 29, 2015
Publication date	Feb 13, 2018
Grant date	Feb 13, 2018

Abstract

A semiconductor optical device that integrates photodiodes (PDs) and optical waveguides coupling with the PDs and a method of forming the semiconductor optical device are disclosed. The optical waveguides in a portion in the lower cladding layer thereof provides a modified layer that forms a conduction barrier of the lower cladding layer. The modified layer is formed by converting the conduction type thereof or implanting protons therein. The modified layer prevents the electrical coupling between PDs through the waveguides.

First claim

We claim:

1. A semiconductor optical device, comprising:
a substrate made of semiconductor material;
a photodiode (PD) including a first layer, a second layer, and a third layer sequentially stacked on the substrate in this order, where the first layer, the second layer, and the third layer are made of semiconductor materials, the first layer being a cathode layer, the second layer being an absorption layer, and the third layer being an anode layer for the PD; and
an optical waveguide being continuous with the PD, the optical waveguide including a modified layer, a fourth layer, and a fifth layer sequentially stacked on the substrate in this order, the modified layer having a thickness substantially equal to a thickness of the first layer, the fourth layer butting against the second layer and having a bandgap wavelength shorter than a bandgap wavelength of the second layer, the fourth layer operating as a core layer, and the fifth layer operating as an upper cladding layer for the optical waveguide,
wherein the modified layer has a resistivity greater than a resistivity of the first layer, and
wherein the modified layer forms a barrier for carriers conducting in the first layer.

2. The semiconductor optical device claim 1 ,
wherein the modified layer is a semi-insulating layer.

3. The semiconductor optical device of claim 1 ,
wherein the PD forms a photodiode mesa including the first layer, the second layer, and the third layer, the photodiode mesa having respective sides passivated with semiconductor layers.

4. The semiconductor optical device of claim 1 ,
wherein the PD forms a photodiode mesa having respective sides, the photodiode mesa including the first layer, the second layer, and the third layer,
wherein the optical waveguide forms a waveguide mesa continuous with one of the sides of the photodiode mesa, the waveguide mesa including the modified layer, the fourth layer, and the fifth layer, and
wherein the substrate has an isolation mesa that surrounds the photodiode mesa.

5. The semiconductor optical device of claim 1 , further including a multi-mode interference (MMI) coupler between the optical waveguide and the PD on the substrate,
wherein the optical waveguide optically couples the MMI coupler with the PD.

6. A semiconductor optical device, comprising:
a substrate made of semiconductor material;
a photodiode (PD) including a first layer, a second layer, and a third layer sequentially stacked on the substrate in this order, where the first layer, the second layer, and the third layer are made of semiconductor materials, the first layer providing a cathode layer, the second layer providing an absorption layer, and the third layer providing an anode layer for the PD; and
an optical waveguide being continuous with the PD, the optical waveguide including the first layer as converted to a modified layer, a fourth layer, and a fifth layer sequentially stacked on the substrate in this order, the modified layer having a thickness substantially equal to a thickness of the first layer, the fourth layer butting against the second layer and having a bandgap wavelength shorter than a bandgap wavelength of the second layer, the fourth layer providing a core layer and the fifth layer providing an upper cladding layer for the optical waveguide,
wherein the modified layer has a resistivity greater than a resistivity of the first layer, and
wherein the modified layer forms a barrier for carriers conducting in the first layer of the PD.

7. The semiconductor optical device of claim 6 ,
wherein the modified layer of the optical waveguide is a semi-insulating layer.

8. The semiconductor optical device of claim 6 , wherein the PD forms a photodiode mesa including the first layer, the second layer, and the third layer, the photodiode mesa having respective sides passivated with semiconductor layers.

9. The semiconductor optical device of claim 6 ,
wherein the PD forms a photodiode mesa having respective sides, the photodiode mesa including the first layer, the second layer, and the third layer,
wherein the optical waveguide forms a waveguide mesa continuous with one of the sides of the photodiode mesa, the waveguide mesa including the modified layer, the fourth layer, and the fifth layer, and
wherein the substrate has an isolation mesa that surrounds the photodiode mesa.

10. The semiconductor optical device of claim 6 , further including a multi-mode interference (MMI) coupler between the optical waveguide and the PD on the substrate,
wherein the optical waveguide optically couples the MMI coupler with the PD.

Assignees

• Sumitomo Electric Industries

Inventors

• Yoneda Yoshihiro
• Masuyama Ryuji
• Yagi Hideki
• Konishi Naoko

Classifications

• G02B6/12004

  Combinations of two or more optical elements · CPC title

• G02B6/136

  by etching · CPC title

• H01L27/1446 Primary

  Electricity · mapped topic

• H10F71/127

  The active layers comprising only Group III-V materials, e.g. GaAs or InP · CPC title

• H10F30/223

  the potential barrier being a PIN barrier · CPC title