Cell programming verification

Patent metadata

Field	Value
Publication number	US-10325652-B2
Application number	US-201715690148-A
Country	US
Kind code	B2
Filing date	Aug 29, 2017
Priority date	Mar 14, 2013
Publication date	Jun 18, 2019
Grant date	Jun 18, 2019

Abstract

Technology for verifying cell programming for a phase change memory array is disclosed. In an example, a method may include sending a reset pulse to a phase change memory cell. The method may further include sensing a threshold voltage of the phase change memory cell in response to applying first and second verify voltages across the phase change memory cell, where the second verify voltage is lower than the first verify voltage. The method may also include determining whether the threshold voltage of the phase change memory cell was below the first or second verify voltages.

First claim

What is claimed is:

1. A phase change memory, comprising:
an array of phase change memory cells; and
a reset verify circuit capable of:
sensing, in a phase change memory cell that has received a reset pulse, a first instance of a threshold voltage of the phase change memory cell in response to applying a first verify voltage across the phase change memory cell;
sensing a second instance of the threshold voltage of the phase change memory cell in response to applying a second verify voltage across the phase change memory cell, where the second verify voltage is lower than the first verify voltage;
determining whether the first instance of the threshold voltage of the phase change memory cell was above the first verify voltage and the second instance of the threshold voltage of the phase change memory cell was below the second verify voltage; and
determining that the phase change memory cell was disturbed by the first verify voltage if the first instance of the threshold voltage of the phase change memory cell was above the first verify voltage and the second instance of the threshold voltage of the phase change memory cell was below the second verify voltage.

2. The phase change memory cell of claim 1 , wherein determining whether the first instance of the threshold voltage of the phase change memory cell was above the first verify voltage and the second instance of the threshold voltage was below the second verify voltage comprises determining whether the phase change memory cell has a lowered resistance after application of the first or second verify voltages.

3. The phase change memory of claim 1 , wherein the second verify voltage is higher than a set cell threshold voltage.

4. The phase change memory of claim 1 , wherein the first verify voltage is lower than a reset cell threshold voltage.

5. The phase change memory of claim 1 , wherein the reset verify circuit is further capable of determining that the phase change memory cell was successfully reset when the first and second instance of the threshold voltage of the phase change memory cell was above the first and second verify voltages.

6. The phase change memory of claim 1 , wherein the phase change memory cell includes a chalcogenic material.

7. The phase change memory of claim 6 , wherein the chalcogenic material is an amorphous or semi-amorphous state when in a reset state and a crystalline or semi-crystalline state when in a set state.

8. The phase change memory of claim 6 , wherein sending a reset pulse to a phase change memory cell involves heating the chalcogenic material.

9. The phase change memory of claim 1 , wherein the reset verify circuit is configured to cyclically perform, a predetermined number of times: sending the reset pulse, sensing the first instance of the threshold voltage, sensing the second instance of the threshold voltage, and determine whether the first instance of the threshold voltage of the phase change memory cell was above the first verify voltage and the second instance of the threshold voltage of the phase change memory cell was below the second verify voltage.

10. The phase change memory of claim 9 , wherein a voltage or current of the reset pulse raises for each cyclical operation of sending the reset pulse, sensing the first instance of the threshold voltage, sensing the second instance of the threshold voltage, and determining whether the first instance of the threshold voltage of the phase change memory cell was above the first verify voltage and the second instance of the threshold voltage of the phase change memory cell was below the second verify voltage.

11. A phase change memory, comprising:
an array of phase change memory cells; and
circuitry configured to:
send a first reset pulse to a phase change memory cell of the array;
sense a first instance of a threshold voltage of the phase change memory cell in response to applying a first verify voltage across the phase change memory cell;
select a second verify voltage such that a probability of disturbing the phase change memory cell is reduced by a predetermined amount as compared with a probability of disturbing the phase change memory cell using the first verify voltage;
sense a second instance of the threshold voltage of the phase change memory cell in response to applying the second verify voltage across the phase change memory cell where the second verify voltage is lower than the first verify voltage; and
determine whether the first instance of the threshold voltage of the phase change memory cell was above the first verify voltage and the second instance of the threshold voltage of the phase change memory cell was below the second verify voltage.

12. The phase change memory of claim 11 , wherein the circuitry is further configured to determine that the phase change memory cell was disturbed if the first instance of the threshold voltage was above the first verify voltage and the second instance of the threshold voltage was below the second verify voltage.

13. The phase change memory of claim 11 , wherein the circuitry is further configured to determine that the phase change memory cell was successfully reset when the first and second instance of the threshold voltage of the phase change memory cell was above the first and second verify voltages.

14. The phase change memory of claim 11 , wherein the circuitry is further configured to:
determine that the phase change memory cell was not successfully reset when the first or second instance of the threshold voltage of the phase change memory cell was not above the first and second verify voltages;
send a second reset pulse to the phase change memory cell, wherein a voltage or current of the second reset pulse is greater than a voltage or current of the first rest pulse if the phase change memory cell was not successfully reset;
sense a third instance of a threshold voltage of the phase change memory cell in response to applying the first verify voltage across the phase change memory cell;
sense a fourth instance of the threshold voltage of the phase change memory cell in response to applying the second verify voltage across the phase change memory cell where the second verify voltage is lower than the first verify voltage;
determine whether the third instance of the threshold voltage of the phase change memory cell was above the first verify voltage and the fourth instance of the threshold voltage of the phase change memory cell was below the second verify voltage.

15. The phase change memory of claim 14 , wherein the circuity is further configured to determine that the phase change memory cell was disturbed by the first verify voltage applied to sense the third instance of the threshold voltage of the phase change memory cell if the third instance of the threshold voltage of the phase change memory was above the first verify voltage and the fourth instance of the threshold voltage of the phase change memory cell was below the second verify voltage.

16. The phase change memory of claim 15 , wherein the circuitry is further configured to determine that the phase change memory cell was successfully reset when the third and fourth instance of the threshold voltage of the phase change memory cell was above the first and second verify voltages.

17. The phase change memory of claim 15 , wherein the circuitry is further configured to determine that the phase change memory cell was not successfully reset when the third and fourth instance of the threshold voltage of the phase change memory cell was not above the first and second verify voltages.

18. Th

Assignees

• Intel Corp

Inventors

• Chu Daniel J
• Zeng Raymond W
• Rivers Doyle

Classifications

• G11C13/0004 Primary

  comprising amorphous/crystalline phase transition cells · CPC title

• G11C13/0033

  Disturbance prevention or evaluation; Refreshing of disturbed memory data · CPC title

• G11C13/0064

  Verifying circuits or methods · CPC title

• G11C13/0069

  Writing or programming circuits or methods · CPC title