Polishing Agent, Stock Solution for Polishing Agent, and Polishing Method
US-2018043497-A1 · Feb 15, 2018 · US
Slurry for polishing of integrated circuit packaging
US10319601B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10319601-B2 |
| Application number | US-201715467866-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 23, 2017 |
| Priority date | Mar 23, 2017 |
| Publication date | Jun 11, 2019 |
| Grant date | Jun 11, 2019 |
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- Title
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- Abstract
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Abstract
Official abstract text for this publication.
A slurry for chemical mechanical planarization includes water, 1-3 wt. % of abrasive particles having an average diameter of at least 10 nm and less than 100 nm and an outer surface of ceria, and ½-3 wt. % of at least one amine.
First claim
Opening claim text (preview).
What is claimed is: 1. A method of fabricating packaging for an integrated circuit chip, comprising: bringing an outer polymer layer of a workpiece into contact with a polishing pad, wherein the outer polymer layer is polybenzobisoxazole (PBO); supply a slurry to an interface between the workpiece and the polishing pad, wherein the slurry comprises water, 1-3 wt. % of abrasive particles having an average diameter of at least 20 nm and less than 100 nm and having an outer surface of ceria, and ½-3 wt. % of at least one amine, wherein the slurry consists of water, the abrasive particles and the at least one amine; and generating relative motion between the workpiece and the polishing pad to polish the outer polymer layer. 2. The method of claim 1 , wherein the workpiece comprises an inner polymer layer, a patterned metal layer, and the outer polymer layer covers the inner polymer layer and the patterned metal layer. 3. The method of claim 2 , wherein the metal layer consists of copper. 4. The method of claim 2 , comprising polishing the outer polymer layer until a top surface of the workpiece is planarized. 5. The method of claim 4 , comprising polishing the outer polymer layer until an upper surface of the patterned metal layer is exposed. 6. The method of claim 4 , comprising depositing a second metal layer on the top surface and patterning the second metal layer. 7. The method of claim 6 , comprising depositing a further polymer layer over the second metal layer and planarizing the further polymer layer. 8. The method of claim 1 , comprising generating the abrasive particles by a hydrothermal synthesis process. 9. The method of claim 1 , wherein the slurry comprises 2-3 wt. % of the abrasive particles. 10. The method of claim 1 , wherein the slurry comprises 2½-3 wt. % of the abrasive particles. 11. A method of fabricating packaging for an integrated circuit chip, comprising: bringing an outer polymer layer of a workpiece into contact with a polishing pad, wherein the outer polymer layer is polybenzobisoxazole (PBO); supply a slurry to an interface between the workpiece and the polishing pad, wherein the slurry comprises water, 1-3 wt. % of abrasive particles having an average diameter of at least 20 nm and less than 100 nm and having an outer surface of ceria, ½-3 wt. % of at least one amine, and 0.5-1.5 wt. %, of tetramethylammonium hydroxide (TMAH), wherein the slurry consists of the water, the abrasive particles, the at least one amine, and the TMAH; and generating relative motion between the workpiece and the polishing pad to polish the outer polymer layer. 12. The method of claim 11 , wherein the workpiece comprises an inner polymer layer, a patterned metal layer, and the outer polymer layer covers the inner polymer layer and the patterned metal layer. 13. The method of claim 12 , wherein the metal layer consists of copper. 14. The method of claim 11 , wherein the slurry comprises 2-3 wt. % of the abrasive particles. 15. The method of claim 11 , wherein the slurry comprises 2½-3 wt. % of the abrasive particles.
Assignees
Inventors
Classifications
of semiconductor materials · CPC title
- H10P95/08Primary
Planarisation of organic insulating materials · CPC title
Composite particles, e.g. coated particles · CPC title
Abrasive particles per se (preparation of diamond C01B32/25) · CPC title
characterised by the composition of the lapping agent · CPC title
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Frequently asked questions
Answers are generated from the same data shown on this page.
- What does patent US10319601B2 cover?
- A slurry for chemical mechanical planarization includes water, 1-3 wt. % of abrasive particles having an average diameter of at least 10 nm and less than 100 nm and an outer surface of ceria, and ½-3 wt. % of at least one amine.
- Who is the assignee on this patent?
- Applied Materials Inc
- What technology area does this patent fall under?
- Primary CPC classification H10P95/08. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jun 11 2019 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 4 related publications on this page (citations in our corpus or others sharing the same primary CPC).