Protective tape and method for manufacturing semiconductor device using the same

Patent metadata

Field	Value
Publication number	US-10312125-B2
Application number	US-201615574729-A
Country	US
Kind code	B2
Filing date	Jun 3, 2016
Priority date	Jun 4, 2015
Publication date	Jun 4, 2019
Grant date	Jun 4, 2019

Abstract

A protective tape that improves solder bonding properties and reduces wafer warping. The protective tape includes, in the following order, an adhesive agent layer, a first thermoplastic resin layer, a second thermoplastic resin layer, and a matrix film layer. The protective tape satisfies the conditions expressed by the following formulae (1) to (3):

Ga>Gb   (1)

Ta<Tb   (2)

( Ga*Ta+Gb*Tb )/( Ta+Tb )≤1.4E+06 Pa.  (3)

Ga represents a shear storage modulus of the first thermoplastic resin layer at a pasting temperature at which the protective tape is pasted; Gb represents a shear storage modulus of the second thermoplastic resin layer at the pasting temperature at which the protective tape is pasted; Ta represents a thickness of the first thermoplastic resin layer; and Tb represents a thickness of the second thermoplastic resin layer.

First claim

The invention claimed is:

1. A protective tape comprising, in the following order, an adhesive agent layer, a first thermoplastic resin layer, a second thermoplastic resin layer, and a matrix film layer, wherein conditions expressed by the following formulae (1) to (3) are satisfied,
Ga>Gb   (1)

Ta<Tb   (2)

( Ga*Ta+Gb*Tb )/( Ta+Tb )≤1.4E+06 Pa  (3)

wherein, in formula (1), Ga represents a shear storage modulus of the first thermoplastic resin layer at a pasting temperature at which the protective tape is pasted and Gb represents a shear storage modulus of the second thermoplastic resin layer at the pasting temperature at which the protective tape is pasted, in formula (2), Ta represents a thickness of the first thermoplastic resin layer and Tb represents a thickness of the second thermoplastic resin layer, in formula (3), Ga and Gb are the same as in formula (1) and Ta and Tb are the same as in formula (2).

2. The protective tape according to claim 1 , wherein a condition expressed by the following formula (4) is satisfied,
Gn/Ga≤ 0.01  (4)

wherein, in formula (4), Gn represents a shear storage modulus of the adhesive agent layer at the pasting temperature at which the protective tape is pasted and Ga is the same as in formula (1).

3. The protective tape according to claim 1 , wherein the pasting temperature is 40 to 80° C.

4. The protective tape according to claim 1 , wherein shear storage modulus of the first thermoplastic resin layer at 60° C. is 1.0E+0.6 to 1.0E+09 Pa, and
wherein shear storage modulus of the second thermoplastic resin layer at 60° C. is 1.0E+04 to 2.0E+06 Pa.

5. The protective tape according to claim 1 ,
wherein shear storage modulus of the adhesive agent layer at 60° C. is 1.0E+01 to 5.0E+04 Pa.

6. The protective tape according to claim 1 , wherein the adhesive agent layer is pasted to a wafer surface on which a bump is formed,
wherein a thickness of the adhesive agent layer, the thickness of the first thermoplastic resin layer, and the thickness of the second thermoplastic resin layer, in total, exceed a height of the bump.

7. The protective tape according to claim 6 , wherein the thickness of the adhesive agent layer is 10 to 80% of the height of the bump.

8. A method for manufacturing a semiconductor device comprising:
a protective tape pasting step of pasting a protective tape having an adhesive agent layer to a wafer surface on which a bump is formed;
a grinding step of grinding a surface of the wafer opposite to the side on which the protective tape is pasted; and
a protective tape peeling step of peeling the protective tape so that the adhesive agent layer remains and other layers are removed,
wherein the protective tape comprises, in the following order, the adhesive agent layer, a first thermoplastic resin layer, a second thermoplastic resin layer, and a matrix film layer, wherein conditions expressed by the following formulae (1) to (3) are satisfied,
Ga>Gb   (1)

Ta<Tb   (2)

( Ga*Ta+Gb*Tb )/( Ta+Tb )≤1.4E+06 Pa  (3)

wherein, in formula (1), Ga represents a shear storage modulus of the first thermoplastic resin layer at a pasting temperature at which the protective tape is pasted and Gb represents a shear storage modulus of the second thermoplastic resin layer at the pasting temperature at which the protective tape is pasted, in formula (2), Ta represents a thickness of the first thermoplastic resin layer and Tb represents a thickness of the second thermoplastic resin layer, in formula (3), Ga and Gb are the same as in formula (1) and Ta and Tb are the same as in formula (2).

9. The method for manufacturing a semiconductor device according to claim 8 , further comprising:
an adhesive tape pasting step of pasting an adhesive tape to a ground surface;
a dicing step of dicing the wafer to which the adhesive tape is pasted to obtain individual semiconductor chips; and
a curing step of curing the adhesive agent layer,
wherein the curing step is performed before the dicing step.

10. A semiconductor device manufactured by the method for manufacturing a semiconductor device according to claim 8 .

11. The protective tape according to claim 2 , wherein shear storage modulus of the first thermoplastic resin layer at 60° C. is 1.0E+0.6 to 1.0E+09 Pa, and
wherein shear storage modulus of the second thermoplastic resin layer at 60° C. is 1.0E+04 to 2.0E+06 Pa.

12. The protective tape according to claim 3 , wherein shear storage modulus of the first thermoplastic resin layer at 60° C. is 1.0E+0.6 to 1.0E+09 Pa, and
wherein shear storage modulus of the second thermoplastic resin layer at 60° C. is 1.0E+04 to 2.0E+06 Pa.

13. The protective tape according to claim 2 , wherein shear storage modulus of the adhesive agent layer at 60° C. is 1.0E+01 to 5.0E+04 Pa.

14. The protective tape according to claim 3 , wherein shear storage modulus of the adhesive agent layer at 60° C. is 1.0E+01 to 5.0E+04 Pa.

15. The protective tape according to claim 4 , wherein shear storage modulus of the adhesive agent layer at 60° C. is 1.0E+01 to 5.0E+04 Pa.

16. The protective tape according to claim 2 , wherein the adhesive agent layer is pasted to a wafer surface on which a bump is formed,
wherein a thickness of the adhesive agent layer, the thickness of the first thermoplastic resin layer, and the thickness of the second thermoplastic resin layer, in total, exceed a height of the bump.

17. The protective tape according to claim 3 , wherein the adhesive agent layer is pasted to a wafer surface on which a bump is formed,
wherein a thickness of the adhesive agent layer, the thickness of the first thermoplastic resin layer, and the thickness of the second thermoplastic resin layer, in total, exceed a height of the bump.

18. The protective tape according to claim 4 , wherein the adhesive agent layer is pasted to a wafer surface on which a bump is formed,
wherein a thickness of the adhesive agent layer, the thickness of the first thermoplastic resin layer, and the thickness of the second thermoplastic resin layer, in total, exceed a height of the bump.

19. The protective tape according to claim 5 , wherein the adhesive agent layer is pasted to a wafer surface on which a bump is formed,
wherein a thickness of the adhesive agent layer, the thickness of the first thermoplastic resin layer, and the thickness of the second thermoplastic resin layer, in total, exceed a height of the bump.

20. A semiconductor device manufactured by the method for manufacturing a semiconductor device according to claim 9 .

Assignees

• Dexerials Corp

Inventors

• Moriyama Hironobu
• Yagi Hidekazu
• Ishimatsu Tomoyuki
• Ebisawa Katsuyuki
• Honjyo Keiji
• Kaneko Junichi

Classifications

• B32B3/08

  characterised by added members at particular parts {(layer formed of separate pieces of material which are juxtaposed side-by-side B32B3/14, B32B3/18)} · CPC title

• B32B27/281

  comprising polyimides · CPC title

• B32B7/04

  Interconnection of layers · CPC title

• B32B2307/732

  Dimensional properties · CPC title

• B32B27/06

  as the main or only constituent of a layer, {which is} next to another layer of {the same or of} a {different material (next to a layer of a particular substance B32B9/045; next to a bituminous or tarry layer B32B11/046; next to a water setting substance layer B32B13/12; next to a metal layer B32B15/08; next to a glass layer B32B17/10; next to a layer formed of natural mineral fibres or particles B32B19/045; next to a wood layer B32B21/08; next to a cellulosic plastic layer B32B23/08; next to a natural or synthetic rubber layer B32B25/08)} · CPC title