Absorbing reflector for semiconductor processing chamber

Patent metadata

Field	Value
Publication number	US-10306708-B2
Application number	US-201715824489-A
Country	US
Kind code	B2
Filing date	Nov 28, 2017
Priority date	Jun 21, 2013
Publication date	May 28, 2019
Grant date	May 28, 2019

Abstract

Embodiments of the disclosure generally relate to a reflector for use in a thermal processing chamber. In one embodiment, the thermal processing chamber generally includes an upper dome, a lower dome opposing the upper dome, the upper dome and the lower dome defining an internal volume of the processing chamber, a substrate support disposed within the internal volume, and a reflector positioned above and proximate to the upper dome, wherein the reflector has a heat absorptive coating layer deposited on a side of the reflector facing the substrate support.

First claim

We claim:

1. A processing chamber, comprising:
an upper dome;
a lower dome opposing the upper dome;
a base ring disposed between the upper dome and the lower dome, the base ring, the upper dome and the lower dome defining an internal volume of the processing chamber;
a substrate support disposed within the internal volume; and
a reflector positioned proximate to the upper dome, the reflector comprising:
a top plate having an upper surface and a bottom surface;
a bottom plate having an upper surface and a bottom surface in parallel to the upper surface and the bottom surface of the top plate, respectively;
one or more cooling channels defined between the bottom surface of the top plate and the upper surface of the bottom plate; and
a heat absorptive layer deposited over at least a portion of the bottom surface of the bottom plate, wherein the heat absorptive layer comprises a coating layer comprising a polyurethane material.

2. The processing chamber of claim 1 , wherein the heat absorptive layer further comprising:
a primer layer disposed between the coating layer and the bottom surface of the bottom plate.

3. The processing chamber of claim 2 , wherein the primer layer comprises an epoxy material.

4. The processing chamber of claim 1 , further comprising:
a clamp ring disposed to secure the upper dome to the base ring.

5. The processing chamber of claim 4 , wherein the bottom plate has a peripheral portion extending from an outer circumference of the bottom plate.

6. The processing chamber of claim 5 , wherein the peripheral portion is supported by the clamp ring.

7. The processing chamber of claim 5 , wherein a top surface of the peripheral portion is flushed with the upper surface of the top plate.

8. The processing chamber of claim 1 , wherein the heat absorptive layer absorbs thermal radiation at a wavelength of 1 micron to 4 micron.

9. The processing chamber of claim 1 , wherein the one or more cooling channels are arranged in a general sinuous geometry.

10. The processing chamber of claim 1 , wherein the reflector further comprising:
an optical pyrometer operable to emit a focal beam passing through the heat absorptive layer.

11. The processing chamber of claim 1 , wherein the top plate and the bottom plate are formed of a material comprising aluminum or stainless steel.

12. A processing chamber, comprising:
an upper dome;
a lower dome opposing the upper dome;
a base ring disposed between the upper dome and the lower dome, the base ring, the upper dome and the lower dome defining an internal volume of the processing chamber;
a substrate support disposed within the internal volume; and
a reflector positioned proximate to the upper dome, wherein the reflector has a heat absorptive layer deposited on a side of the reflector facing the substrate support, wherein the heat absorptive layer comprises:
a primer layer comprising an epoxy material; and
a coating layer comprising a polyurethane material.

13. The processing chamber of claim 12 , further comprising:
a clamp ring disposed to secure the upper dome to the base ring.

14. The processing chamber of claim 13 , wherein the reflector has a peripheral portion extending from an outer circumference of the reflector, and the peripheral portion is supported by the clamp ring.

15. The processing chamber of claim 12 , wherein the heat absorptive layer absorbs thermal radiation at a wavelength of 1 micron to 4 micron.

16. The processing chamber of claim 12 , wherein the heat absorptive layer has a thickness of about 0.03 mm and about 0.1 mm.

17. The processing chamber of claim 12 , wherein the reflector comprises a top plate and a bottom plate.

18. The processing chamber of claim 17 , wherein the reflector further comprises one or more cooling channels disposed between the top plate and the bottom plate.

19. The processing chamber of claim 17 , wherein the bottom plate is about 350 mm to about 450 mm in diameter.

20. The processing chamber of claim 12 , wherein the reflector further comprising:
an optical pyrometer operable to emit a focal beam passing through the heat absorptive layer.

Assignees

• Applied Materials Inc

Inventors

• Lo Kin Pong
• Brillhart Paul
• Ramachandran Balasubramanian
• Kuppurao Satheesh
• Redfield Daniel
• Ranish Joseph M
• Mack James Francis
• Patalay Kailash Kiran
• Olsen Michael
• Feigel Eddie
• Halpin Richard
• Vetorino Brett

Classifications

• H10P72/0436

  mainly by radiation · CPC title

• H10P72/70

  for supporting or gripping · CPC title

• H10P95/90 Primary

  Thermal treatments, e.g. annealing or sintering · CPC title

• H05B3/0047 Primary

  for semiconductor manufacture · CPC title

• H01L21/67115

  Electricity · mapped topic