Emitter and method for manufacturing the same

Patent metadata

Field	Value
Publication number	US-10290805-B2
Application number	US-201815888515-A
Country	US
Kind code	B2
Filing date	Feb 5, 2018
Priority date	Apr 15, 2015
Publication date	May 14, 2019
Grant date	May 14, 2019

Abstract

A method for manufacturing an emitter comprises providing a semiconductor substrate having a main surface, the semiconductor substrate comprising a cavity adjacent to the main surface. A portion of the semiconductor substrate arranged between the cavity and the main surface of the semiconductor substrate forms a support structure. The method comprises arranging an emitting element at the support structure, the emitting element being configured to emit a thermal radiation of the emitter, wherein the cavity provides a reduction of a thermal coupling between the emitting element and the semiconductor substrate.

First claim

The invention claimed is:

1. An emitter comprising:
a semiconductor substrate having a main surface,
the semiconductor substrate comprising a cavity adjacent to the main surface,
wherein a portion of the semiconductor substrate arranged between the cavity and the main surface of the semiconductor substrate forms a support structure, and

the semiconductor substrate comprising at least one trench at the main surface extending to the cavity;

an emitting element,
a portion of the support structure comprising the emitting element, and
the emitting element being configured to emit a thermal radiation of the emitter,
wherein the cavity provides a reduction of a thermal coupling between the emitting element and the semiconductor substrate; and

a sealing structure at the main surface,
the semiconductor substrate comprising another cavity arranged at the portion of the support structure,
the portion of the support structure being uncovered by the sealing structure, and
the emitting element being arranged between the cavity and the other cavity.

2. The emitter according to claim 1 , wherein the semiconductor substrate and the support structure comprise a monocrystalline semiconductor material.

3. The emitter according to claim 1 , wherein the support structure is mechanically fixed by the sealing structure or by a sacrificial material different from a material of the semiconductor substrate and not fixed by the semiconductor substrate.

4. The emitter according to claim 1 , further comprising an electric connection to the emitting element,
wherein the electric connection is arranged through the sealing structure.

5. The emitter according to claim 1 , wherein an atmospheric pressure in the cavity is reduced when compared to an ambient pressure of the emitter.

6. The emitter according to claim 1 , wherein the cavity comprises an extension along a direction parallel to a surface normal of the main surface,
the extension being at least 20 nm and at most 1 mm.

7. A sensor comprising:
the emitter of claim 1 ; and
a sensor element configured for receiving the thermal radiation and for determining a spectral absorption of the thermal radiation of a material arranged between the sensor element and the emitting element,
the spectral absorption caused by the thermal radiation traveling through the material arranged between the sensor element and the emitting element.

8. An emitter comprising:
a semiconductor substrate having a main surface,
the semiconductor substrate comprising a cavity adjacent to the main surface,
wherein a portion of the semiconductor substrate arranged between the cavity and the main surface of the semiconductor substrate forms a support structure, and

the semiconductor substrate comprising at least one trench at the main surface extending to the cavity;

an emitting element on or over the support structure,
the emitting element being configured to emit a thermal radiation of the emitter,
wherein the cavity provides a reduction of a thermal coupling between the emitting element and the semiconductor substrate; and

a sealing structure at the main surface,
the semiconductor substrate comprising another cavity arranged at the portion of the support structure,
the portion of the support structure being uncovered by the sealing structure, and
the emitting element being arranged between the cavity and the other cavity.

9. The emitter according to claim 8 , wherein the semiconductor substrate and the support structure comprise a monocrystalline semiconductor material.

10. The emitter according to claim 8 , wherein the support structure is mechanically fixed by the sealing structure or by a sacrificial material different from a material of the semiconductor substrate and not fixed by the semiconductor substrate.

11. The emitter according to claim 8 , further comprising an electric connection to the emitting element,
wherein the electric connection is arranged through the sealing structure.

12. The emitter according to claim 8 , wherein an atmospheric pressure in the cavity is reduced when compared to an ambient pressure of the emitter.

13. A sensor comprising:
the emitter of claim 8 ; and
a sensor element configured for receiving the thermal radiation and for determining a spectral absorption of the thermal radiation of a material arranged between the sensor element and the emitting element,
the spectral absorption caused by the thermal radiation traveling through the material arranged between the sensor element and the emitting element.

14. An emitter comprising:
a semiconductor substrate having a main surface,
the semiconductor substrate comprising a cavity adjacent to the main surface,
wherein a portion of the semiconductor substrate arranged between the cavity and the main surface of the semiconductor substrate forms a support structure, and

the semiconductor substrate comprising at least one trench at the main surface extending to the cavity;

an emitting element adjacent to the cavity,
the emitting element being configured to emit a thermal radiation of the emitter,
wherein the cavity provides a reduction of a thermal coupling between the emitting element and the semiconductor substrate; and

a sealing structure at the main surface,
the semiconductor substrate comprising another cavity arranged at the portion of the support structure,
the portion of the support structure being uncovered by the sealing structure, and
the emitting element being arranged between the cavity and the other cavity.

15. The emitter according to claim 14 , wherein the semiconductor substrate and the support structure comprise a monocrystalline semiconductor material.

16. The emitter according to claim 14 , wherein the support structure is mechanically fixed by the sealing structure or by a sacrificial material different from a material of the semiconductor substrate and not fixed by the semiconductor substrate.

17. The emitter according to claim 16 , further comprising an electric connection to the emitting element,
wherein the electric connection is arranged through the sealing structure.

18. The emitter according to claim 1 , further comprising a connection between the cavity and the other cavity through the main surface of the semiconductor substrate.

19. The emitter according to claim 8 , further comprising a connection between the cavity and the other cavity through the main surface of the semiconductor substrate.

20. The emitter according to claim 14 , further comprising a connection between the cavity and the other cavity through the main surface of the semiconductor substrate.

Assignees

• Infineon Technologies Dresden Gmbh

Inventors

• Bieselt Steffen
• Froehlich Heiko
• Kautzsch Thoralf
• Stegemann Maik
• Vogt Mirko

Classifications

• G01J3/42

  Absorption spectrometry; Double beam spectrometry; Flicker spectrometry; Reflection spectrometry (beam switching arrangements G01J3/08) · CPC title

• H01L49/00 Primary

  Electricity · mapped topic

• G01J3/00

  Spectrometry; Spectrophotometry; Monochromators; Measuring colours · CPC title

• G01J3/108 Primary

  for measurement in the infrared range · CPC title

• H10N99/00 Primary

  Subject matter not provided for in other groups of this subclass · CPC title