Single-crystal diamond material, single-crystal diamond chip, and perforated tool

Patent metadata

Field	Value
Publication number	US-10287708-B2
Application number	US-201615519757-A
Country	US
Kind code	B2
Filing date	Jul 22, 2016
Priority date	Jul 22, 2015
Publication date	May 14, 2019
Grant date	May 14, 2019

Abstract

In a single-crystal diamond material, a concentration of non-substitutional nitrogen atoms is not more than 200 ppm, a concentration of substitutional nitrogen atoms is lower than the concentration of the non-substitutional nitrogen atoms, and the single-crystal diamond material has a crystal growth main surface having an off angle of not more than 20°. A perforated tool includes a single-crystal diamond die, wherein in the single-crystal diamond die, a concentration of non-substitutional nitrogen atoms is not more than 200 ppm, a concentration of substitutional nitrogen atoms is lower than the concentration of the non-substitutional nitrogen atoms, and the single-crystal diamond die has a low-index plane represented by a Miller index of not less than −5 and not more than 5 in an integer, a perpendicular line of the low-index plane having an off angle of not more than 20° relative to an orientation of a hole for wire drawing.

First claim

The invention claimed is:

1. A single-crystal chemical vapor deposition (CVD) diamond material, wherein a concentration of non-substitutional nitrogen atoms is not less than 1.1 ppm and not more than 200 ppm, a concentration of substitutional nitrogen atoms is lower than the concentration of the non-substitutional nitrogen atoms, and the single-crystal CVD diamond material has a crystal growth main surface having an off angle of not less than 2° and not more than 20°.

2. The single-crystal CVD diamond material according to claim 1 , wherein the crystal growth main surface has an off angle of less than 7°.

3. The single-crystal CVD diamond material according to claim 1 , wherein the concentration of the substitutional nitrogen atoms is less than 80 ppm.

4. The single-crystal CVD diamond material according to claim 1 , wherein an angle of deviation from parallelism between the crystal growth main surface and a main surface opposite to the crystal growth main surface is less than 2°, the main surface opposite to the crystal growth main surface has an undulation with a maximum height difference Dm of not more than 10 μm/mm, and has an arithmetic mean roughness Ra of not more than 0.1 μm.

5. The single-crystal CVD diamond material according to claim 1 , wherein in an X-ray topography image for the crystal growth main surface, groups of crystal defect points are gathered, each of the crystal defect points being a tip point of a crystal defect line reaching the crystal growth main surface, the crystal defect line representing a line in which a crystal defect exists.

6. The single-crystal CVD diamond material according to claim 5 , wherein a density of the crystal defect points is more than 2 mm −2 .

7. The single-crystal CVD diamond material according to claim 5 , wherein a density of combined dislocation points of the crystal defect points is more than 2 mm −2 , each of the combined dislocation points being a tip point of a combined dislocation reaching the crystal growth main surface, the combined dislocation resulting from a combination of at least either of a plurality of edge dislocations and a plurality of screw dislocations.

8. The single-crystal CVD diamond material according to claim 5 , comprising a plurality of single-crystal diamond layers.

9. The single-crystal CVD diamond material according to claim 8 , wherein the crystal defect line is newly generated or branched at an interface between the single-crystal diamond layers, and a density of the crystal defect points in the crystal growth main surface is higher than a density of the crystal defect points in a main surface opposite to the crystal growth main surface.

10. The single-crystal CVD diamond material according to claim 5 , wherein a plurality of crystal defect line-like gathered regions exist in parallel, and in each of the plurality of crystal defect line-like gathered regions, groups of the crystal defect points are gathered to extend in a form of lines.

11. The single-crystal CVD diamond material according to claim 1 , wherein when the single-crystal CVD diamond material has a thickness of 500 μm, a transmittance for light having a wavelength of 400 nm is not more than 60%.

12. A single-crystal chemical vapor deposition (CVD) diamond chip, wherein a concentration of non-substitutional nitrogen atoms is not less than 1.1 ppm and not more than 200 ppm, a concentration of substitutional nitrogen atoms is lower than the concentration of the non-substitutional nitrogen atoms, and the single-crystal CVD diamond chip has a main surface with an off angle of not less than 2° and not more than 20°.

13. A single-crystal CVD diamond chip cut out from the single-crystal CVD diamond material recited in claim 1 .

14. The single-crystal CVD diamond chip according to claim 12 , wherein the main surface of the single-crystal CVD diamond chip is a low-index plane represented by a Miller index of not less than −5 and not more than 5 in an integer.

15. The single-crystal CVD diamond chip according to claim 12 , wherein
in an X-ray topography image for one of a crystal growth main surface and a main surface parallel to the crystal growth main surface of the single-crystal CVD diamond chip, groups of crystal defect points are gathered, each of the crystal defect points being a tip point of a crystal defect line reaching one of the crystal growth main surface and the main surface parallel to the crystal growth main surface, the crystal defect line representing a line in which a crystal defect exists, and
a density of the crystal defect points is more than 2 mm −2 .

16. A perforated tool comprising a single-crystal diamond die formed from the single-crystal CVD diamond chip recited in claim 12 .

Assignees

• Sumitomo Electric Industries
• Sumitomo Electric Hardmetal Corp

Inventors

• Nishibayashi Yoshiki
• Tatsumi Natsuo
• Sumiya Hitoshi
• Ueda Akihiko
• Kobayashi Yutaka

Classifications

• C23C16/274

  using microwave discharges · CPC title

• C30B29/04 Primary

  Diamond · CPC title

• B21C3/025

  comprising diamond parts · CPC title

• C30B25/20

  the substrate being of the same materials as the epitaxial layer · CPC title

• C30B9/00

  Single-crystal growth from melt solutions using molten solvents (by normal or gradient freezing C30B11/00; by zone-melting C30B13/00; by crystal pulling C30B15/00; on immersed seed crystal C30B17/00; by liquid phase epitaxial growth C30B19/00; under a protective fluid C30B27/00) · CPC title