Substrate processing apparatus

Patent metadata

Field	Value
Publication number	US-10287684-B2
Application number	US-201514790393-A
Country	US
Kind code	B2
Filing date	Jul 2, 2015
Priority date	Jul 8, 2014
Publication date	May 14, 2019
Grant date	May 14, 2019

Abstract

A substrate processing apparatus includes a process chamber including a process space configured to accommodate a substrate; a substrate support part including a substrate mounting stand; a first gas supply part; a second gas supply part; a gas introduction port configured to introduce a gas from the first gas supply part or the second gas supply part; a gas rectifying part including an opening through which the gas introduced from the gas introduction port passes; a gas flow passage communicated with the opening and formed between the gas rectifying part and an outer periphery of the substrate mounting stand in a circumferential direction; a gas pressure equalizing part including at least two gas pressure equalizing spaces; a purge gas supply part configured to supply different amount of a purge gas to each of the at least two gas pressure equalizing spaces; and a conductance adjustment part.

First claim

What is claimed is:

1. A substrate processing apparatus, comprising:
a process chamber including a process space configured to accommodate a substrate;
a substrate support part installed in the process chamber, the substrate support part including a substrate mounting stand;
a first gas supply part configured to supply a first gas to the substrate;
a second gas supply part configured to supply a second gas to the substrate;
a gas introduction port installed in the process chamber, the gas introduction port being configured to introduce a gas from the first gas supply part or the second gas supply part;
a gas rectifying part installed between the gas introduction port and the process space, the gas rectifying part including:
an opening through which the gas introduced from the gas introduction port passes;
a first purge nozzle formed in a first periphery region of the gas rectifying part between a first gas pressure equalizing space in the gas rectifying part and a first portion of an outer periphery of the substrate mounting stand; and
a second purge nozzle formed in a second periphery region of the gas rectifying part between a second gas pressure equalizing space in the gas rectifying part and a second portion of the outer periphery of the substrate mounting stand;

a gas flow passage communicating with the opening and formed between the gas rectifying part and the outer periphery of the substrate mounting stand in a circumferential direction, the gas flow passage having a first height formed between a lower end of the first purge nozzle and the first portion of the outer periphery of the substrate mounting stand and a second height formed between a lower end of the second purge nozzle and the second portion of the outer periphery of the substrate mounting stand, and the first height being higher than the second height;
a first purge gas supply part connected to the first purge nozzle and configured to supply a first amount of a purge gas onto the first portion of the outer periphery of the substrate mounting stand through the first purge nozzle in a direction of the first height; and
a second purge gas supply part connected to the second purge nozzle and configured to supply a second amount of the purge gas onto the second portion of the outer periphery of the substrate mounting stand through the second purge nozzle in a direction of the second height, the first amount of the purge gas being larger than the second amount of the purge gas.

2. The substrate processing apparatus of claim 1 , further comprising a conductance adjustment part including the first gas pressure equalizing space and the second gas pressure equalizing space,
wherein the conductance adjustment part is installed in an outer periphery end of the gas rectifying part.

3. The substrate processing apparatus of claim 2 , further comprising a control part configured to control the first gas supply part, the second gas supply part, and the conductance adjustment part such that,
the purge gas is supplied to the conductance adjustment part at a first flow rate when the first gas is supplied to the substrate,
the purge gas is supplied to the conductance adjustment part at the first flow rate when the second gas is supplied to the substrate, and
the purge gas is supplied to the conductance adjustment part at a second flow rate when the first gas and the second gas are not supplied to the substrate.

4. The substrate processing apparatus of claim 3 , wherein the control part is configured to control the first flow rate to be greater than the second flow rate.

5. The substrate processing apparatus of claim 4 , wherein the control part is further configured to control the first gas supply part, the second gas supply part, and the conductance adjustment part such that,
the purge gas is supplied to the conductance adjustment part at a third flow rate and a fourth flow rate when the first gas is supplied to the substrate,
the purge gas is supplied to the conductance adjustment part at the third flow rate and the fourth flow rate when the second gas is supplied to the substrate, and
the purge gas is supplied to the conductance adjustment part at a fifth flow rate and a sixth flow rate when the first gas and the second gas are not supplied to the substrate.

6. The substrate processing apparatus of claim 5 , wherein the control part is further configured to control the third flow rate to be greater than the fourth flow rate and control the fourth flow rate to be greater than the fifth flow rate and the sixth flow rate.

7. The substrate processing apparatus of claim 6 , wherein a conductance adjustment mechanism is installed in a lower surface of the gas rectifying part.

8. The substrate processing apparatus of claim 1 , further comprising:
a conductance adjustment part including the first gas pressure equalizing space and the second gas pressure equalizing space; and
a control part configured to control the first gas supply part, the second gas supply part, and the conductance adjustment part such that,
the purge gas is supplied to the conductance adjustment part at a first flow rate when the first gas is supplied to the substrate,
the purge gas is supplied to the conductance adjustment part at the first flow rate when the second gas is supplied to the substrate, and
the purge gas is supplied to the conductance adjustment part at a second flow rate when the first gas and the second gas are not supplied to the substrate.

9. The substrate processing apparatus of claim 8 , wherein the control part is further configured to control the first flow rate to be greater than the second flow rate.

10. The substrate processing apparatus of claim 9 , wherein the control part is further configured to control the first gas supply part, the second gas supply part, and the conductance adjustment part such that,
the purge gas is supplied to the conductance adjustment part at a third flow rate and a fourth flow rate when the first gas is supplied to the substrate,
the purge gas is supplied to the conductance adjustment part at the third flow rate and the fourth flow rate when the second gas is supplied to the substrate, and
the purge gas is supplied to the conductance adjustment part at a fifth flow rate and a sixth flow rate when the first gas and the second gas are not supplied to the substrate.

11. The substrate processing apparatus of claim 10 , wherein the control part is further configured to control the third flow rate to be greater than the fourth flow rate and control the fourth flow rate to be greater than the fifth flow rate and the sixth flow rate.

12. The substrate processing apparatus of claim 11 , wherein a conductance adjustment mechanism is installed in a lower surface of the gas rectifying part.

13. The substrate processing apparatus of claim 8 , wherein the control part is further configured to control the first gas supply part, the second gas supply part, and the conductance adjustment part such that,
the purge gas is supplied to the conductance adjustment part at a third flow rate and a fourth flow rate when the first gas is supplied to the substrate,
the purge gas is supplied to the conductance adjustment part at the third flow rate and the fourth flow rate when the second gas is supplied to the substrate, and
the purge gas is supplied to the conductance adjustment part at a fifth flow rate and a sixth flow rate when the first gas and the second gas are not supplied to the substrate.

14. The substrate processing apparatus of claim 13 , wherein the control part is further configured to control the third flow rate to be greater than the fourth flow

Assignees

• Hitachi Int Electric Inc
• Kokusai Electric Corp

Inventors

• Yanai Hidehiro

Classifications

• C23C16/45557

  Pulsed pressure or control pressure · CPC title

• C23C16/4408

  by purging residual gases from the reaction chamber or gas lines · CPC title

• C23C16/52

  Controlling or regulating the coating process {(C23C16/45557, C23C16/279 take precedence)} · CPC title

• H10P72/04

  Apparatus for manufacture or treatment · CPC title

• C23C16/44

  characterised by the method of coating (C23C16/04 takes precedence) · CPC title