Halide material producing method and halide material
US-2024425383-A1 · Dec 26, 2024 · US
US10287175B1 · US · B1
| Field | Value |
|---|---|
| Publication number | US-10287175-B1 |
| Application number | US-201514983780-A |
| Country | US |
| Kind code | B1 |
| Filing date | Dec 30, 2015 |
| Priority date | Dec 30, 2015 |
| Publication date | May 14, 2019 |
| Grant date | May 14, 2019 |
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Disclosed are methods for purification of a crude TiI4 for deposition of Ti-containing films including evaporating volatile impurities in the crude TiI4 under vacuum at room temperature in a sublimator and removing the volatile impurities, placing the sublimator in a hot oil bath under vacuum at a temperature to evaporate TiI4 and form powders or a solid, and sublimating the powers or the solid under vacuum at the temperature to obtain the purified TiI4. Disclosed are methods for storage of a pure TiI4 including drying a stainless-steel canister, instantaneously moving the dried stainless steel canister into a glove box under inert atmosphere at room temperature, moving the pure TiI4 into the glove box, filling the pure TiI4 into the dried stainless-steel canister, and sealing the dried stainless steel canister containing the pure TiI4 with metallic sealing.
Opening claim text (preview).
We claim: 1. A method for purification of TiI 4 for deposition of Ti-containing films, the method comprising the steps of: introducing TiI 4 into a sublimator having a cold trap cooled by liquid nitrogen; evaporating volatile impurities in the TiI 4 under vacuum at room temperature to produce semi-purified TiI 4 and collecting the evaporated volatile impurities in the cold trap; removing the evaporated volatile impurities from the cold trap; placing the sublimator containing the semi-purified TiI 4 in a hot oil bath under vacuum at a temperature to evaporate TiI 4 and form a powder or solid in the cold trap; and sublimating the powder or solid under vacuum at the temperature to obtain the purified TiI 4 . 2. The method of claim 1 , wherein the crude TiI 4 has a purity ranging from approximately 90% w/w to approximately 95% w/w. 3. The method of claim 1 , wherein the temperature ranges from approximately 150° C. to approximately 190° C. 4. The method of claim 3 , wherein the temperature is 180° C. 5. The method of any claim of 1 , wherein the volatile impurity is I 2 . 6. The method of any claim of 1 , wherein the volatile impurity is HI. 7. The method of claim 1 , wherein the purified TiI 4 has a purity of 99% w/w. 8. The method of claim 1 , wherein the purified TiI 4 has a purity ranging from approximately 99% w/w to approximately 100% w/w. 9. The method of claim 1 , wherein the purified TiI 4 has a purity ranging from approximately 99.9% w/w to approximately 100.0% w/w. 10. The method of claim 1 , wherein the purified TiI 4 contains between 0% w/w and approximately 1% w/w non-volatile impurities. 11. The method of claim 1 , wherein the purified TiI 4 contains between 0% w/w and approximately 0.5% w/w non-volatile impurities. 12. The method of claim 1 , wherein the purified TiI 4 contains between 0% w/w and approximately 1% w/w I 2 and/or HI. 13. The method of claim 1 , wherein the purified TiI 4 contains between 0% w/w and approximately 0.5% w/w I 2 and/or HI.
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