Titanium-containing film forming compositions for vapor deposition of titanium-containing films

Patent metadata

Field	Value
Publication number	US-10584039-B2
Application number	US-201715827783-A
Country	US
Kind code	B2
Filing date	Nov 30, 2017
Priority date	Nov 30, 2017
Publication date	Mar 10, 2020
Grant date	Mar 10, 2020

Abstract

Titanium-containing film forming compositions comprising titanium halide-containing precursors are disclosed. Also disclosed are methods of synthesizing and using the disclosed precursors to deposit Titanium-containing films on one or more substrates via vapor deposition processes.

First claim

We claim:

1. A titanium-containing film forming composition comprising a titanium bromide-containing precursor having one of the following formula:
TiX b :A c

with b=3 or 4; c=1-3; X=Br; A=SR 2 , SeR 2 , TeR 2 , or PR 3 , and each R is independently H or a C1-C5 hydrocarbon, wherein the Ti bromide-containing precursor is a liquid at standard temperature and pressure.

2. The titanium-containing film forming composition of claim 1 , further comprising a mixture of TiBr 2 (═O), TiBr 3 (OH)), and TiO 2 .

3. The titanium-containing film forming composition of claim 2 , further comprising hydrogen bromide.

4. The titanium-containing film forming composition of claim 1 , further comprising a mixture of TiI 2 (═O), TiI 3 (OH), and TiO 2 .

5. The titanium-containing film forming composition of claim 1 , further comprising hydrogen iodide.

6. The titanium-containing film forming composition of claim 1 , wherein A is SR 2 .

7. The titanium-containing film forming composition of claim 6 , wherein each R is independently a C1-C2 hydrocarbon when c=2.

8. The titanium-containing film forming composition of claim 6 , wherein the Ti halide-containing precursor being TiBr 4 :S(nPr) 2 .

9. The titanium-containing film forming composition of claim 6 , further comprising TiX 4 :SR′ 2 , wherein each R′ is independently H or a C1-C5 hydrocarbon and R′≠R.

10. The titanium-containing film forming composition of claim 1 , wherein A is SeR 2 .

11. The titanium-containing film forming composition of claim 1 , wherein A is TeR 2 .

12. The titanium-containing film forming composition of claim 1 , wherein A is PR 3 .

13. The titanium-containing film forming composition of claim 1 , further comprising a hydrocarbon solvent or of free adduct.

14. The titanium-containing film forming composition of claim 1 , further comprising H 2 O.

15. A method of depositing a Ti-containing film on a substrate, the method comprising introducing the Ti-containing film forming composition of claim 1 into a reactor containing the substrate and depositing at least part of the Ti bromide-containing precursor onto the substrate to form the Ti-containing film.

16. The method of claim 15 , further comprising introducing a reactant into the reactor.

17. The method of claim 15 , wherein the Ti-containing film is selectively deposited onto the substrate.

Assignees

• Air Liquide

Inventors

• Sanchez Antonio
• Girard Jean-Marc
• Nikiforov Grigory
• Blasco Nicolas

Classifications

• C23C16/405

  of refractory metals or yttrium · CPC title

• C01G23/022

  Titanium tetrachloride · CPC title

• C23C16/4481

  by evaporation using carrier gas in contact with the source material (C23C16/4486 takes precedence) · CPC title

• G01N25/4866

  by using a differential method · CPC title

• C23C16/4483

  using a porous body · CPC title