Titanium-containing film forming compositions for vapor deposition of titanium-containing films

Patent metadata

Field	Value
Publication number	US-2019161358-A1
Application number	US-201715827783-A
Country	US
Kind code	A1
Filing date	Nov 30, 2017
Priority date	Nov 30, 2017
Publication date	May 30, 2019
Grant date	—

Abstract

Titanium-containing film forming compositions comprising titanium halide-containing precursors are disclosed. Also disclosed are methods of synthesizing and using the disclosed precursors to deposit Titanium-containing films on one or more substrates via vapor deposition processes.

First claim

We claim:

1 . A titanium-containing film forming composition comprising a titanium halide-containing precursor having one of the following formula:
TiX b :A c
with b=3 or 4; c=1-3; X=Br or I; A=SR 2 , SeR 2 , TeR 2 , or PR 3 , and each R is independently H or a C1-C5 hydrocarbon.

2 . The titanium-containing film forming composition of claim 1 , wherein X is Br.

3 . The titanium-containing film forming composition of claim 2 , further comprising between approximately 0% w/w and 0.2% w/w of a mixture of oxybromide (TiBr 2 (═O)), hydroxybromide (TiBr 3 (OH)), and oxides (TiO 2 ), preferably between approximately 0 w/w and 0.1% w/w.

4 . The titanium-containing film forming composition of claim 2 , further comprising between approximately 0 w/w and 0.1% w/w of hydrogen bromide (HBr).

5 . The titanium-containing film forming composition of claim 1 , wherein X is I.

6 . The titanium-containing film forming composition of claim 5 , further comprising between approximately 0% w/w and 0.2% w/w of a mixture of oxyiodide (TiI 2 (═O)), hydroxyiodide (TiI 3 (OH)), and oxides (TiO 2 ), preferably between approximately 0% w/w and 0.1% w/w.

7 . The titanium-containing film forming composition of claim 2 , further comprising between approximately 0% w/w and 0.1% w/w of hydrogen iodide (HI).

8 . The titanium-containing film forming composition of claim 1 , wherein A is SR 2 .

9 . The titanium-containing film forming composition of claim 8 , wherein each R is independently a C1-C2 hydrocarbon when c=2.

10 . The titanium-containing film forming composition of claim 8 , wherein the Ti halide-containing precursor being TiBr 4 :S(nPr) 2 .

11 . The titanium-containing film forming composition of claim 8 , further comprising between approximately 0% w/w and 0.2% w/w of TiX 4 :SR′ 2 , wherein each R′ is independently H or a C1-C5 hydrocarbon and R′≠R.

12 . The titanium-containing film forming composition of claim 1 , wherein A is SeR 2 .

13 . The titanium-containing film forming composition of claim 1 , wherein A is TeR 2 .

14 . The titanium-containing film forming composition of claim 1 , wherein A is PR 3 .

15 . The titanium-containing film forming composition of claim 1 , wherein the Ti halide-containing precursor is a liquid at standard temperature and pressure.

16 . The titanium-containing film forming composition of claim 1 , further comprising between approximately 0% w/w and 5% w/w of a hydrocarbon solvent or of free adduct.

17 . The titanium-containing film forming composition of claim 1 , further comprising between approximately 0% w/w and 5 ppm of H 2 O.

18 . A method of depositing a Ti-containing film on a substrate, the method comprising introducing the Ti-containing film forming composition of claim 1 into a reactor containing the substrate and depositing at least part of the Ti halide-containing precursor onto the substrate to form the Ti-containing film.

19 . The method of claim 18 , further comprising introducing a reactant into the reactor.

20 . The method of claim 18 , wherein the Ti-containing film is selectively deposited onto the substrate.

Assignees

• Air Liquide

Inventors

• Sanchez Antonio
• Girard Jean-Marc
• Nikiforov Grigory
• Blasco Nicolas

Classifications

• H10P14/69394 Primary

  the material containing titanium, e.g. TiO2 · CPC title

• H10P14/6339

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title

• H10P14/6336

  in the presence of a plasma [PECVD] · CPC title

• H10W20/045

  for deposition from the gaseous phase, e.g. for chemical vapour deposition [CVD] · CPC title

• C01G23/022

  Titanium tetrachloride · CPC title