Thin film transistor with source electrode, drain electrode and active layer prepared in a same layer and method for manufacturing the same, array substrate and display device

Patent metadata

Field	Value
Publication number	US-10283628-B2
Application number	US-201514905086-A
Country	US
Kind code	B2
Filing date	Sep 11, 2015
Priority date	Feb 2, 2015
Publication date	May 7, 2019
Grant date	May 7, 2019

Abstract

A thin film transistor and manufacturing method thereof, an array substrate and a display device are disclosed. The thin film transistor includes a source electrode, a drain electrode and an active layer; the source electrode, the drain electrode and the active layer are disposed in a same layer, the source electrode and the drain electrode are separately joined to the active layer through their respective side faces, a material of the source electrode and the drain electrode is metal, and a material of the active layer is a metal oxide semiconductor in correspondence with material of the source electrode and the drain electrode. With the thin film transistor, procedures can be decreased, thereby reducing costs.

First claim

What is claimed is:

1. A manufacturing method of a thin film transistor, comprising a step of forming a source electrode, a drain electrode and an active layer in a same layer,
wherein the step of forming the source electrode, the drain electrode and the active layer lying in the same layer includes:
forming a metal thin film;
forming a pattern of the source electrode, the drain electrode and the active layer by a metal thin film;
forming a stop layer to cover a source region and a drain region, and to expose an active layer region; and
converting part or all of the metal thin film in the active layer region into a metal oxide semiconductor, and removing the stop layer in the source region and the drain region, thereby forming the source electrode, the drain electrode and the active layer eventually.

2. The manufacturing method of the thin film transistor claimed as claim 1 , wherein a material of the metal thin film is a monolayer or a stack of any one or more of metals selected from the group consisting of indium, gallium, zinc, ti molybdenum or tungsten or any alloy thereof.

3. The manufacturing method of the thin film transistor claimed as claim 1 , wherein the pattern of the source electrode, the drain electrode and the active layer is formed by the metal thin film with a same one patterning process.

4. The manufacturing method of the thin film transistor claimed as claim 1 , wherein photoresist is used for the stop layer.

5. The manufacturing method of the thin film transistor claimed as claim 1 , wherein photoresist is used for the stop layer, and a half-tone or gray-tone mask manner is adopted to simultaneously form the pattern of the source electrode, the drain electrode and the active layer and to distinguish the source region and the drain region that are required to be covered and the active layer region that is required to be exposed.

6. The manufacturing method of the thin film transistor claimed as claim 1 , wherein part of all of the metal in the active layer region is converted into a metal oxide semiconductor by way of heat treatment.

7. The manufacturing method of the thin film transistor claimed as claim 6 , wherein the heat treatment is carried out under an oxygen atmosphere.

8. The manufacturing method of the thin film transistor claimed as claim 6 , wherein the heat treatment is carried out under an oxygen gas atmosphere, or carried out under a nitrogen gas or inert gas atmosphere, which contains oxygen gas.

9. The manufacturing method of the thin film transistor claimed as claim 1 , further comprising steps of forming a gate electrode and a gate insulating layer.

Assignees

• Boe Technology Group Co Ltd
• Hefei Xinsheng Optoelectronics Technology Co Ltd

Inventors

• Song Botao
• Lin Liang
• Zou Zhixiang
• Huang Yinhu

Classifications

• H10P32/17

  characterised by the semiconductor material · CPC title

• H10P32/12

  between a solid phase and a gaseous phase · CPC title

• H10P14/3434

  being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424) · CPC title

• H10P14/203

  using transformation of metal, e.g. oxidation or nitridation · CPC title

• H01L27/1288

  Electricity · mapped topic