Passivation of nonlinear optical crystals

Patent metadata

Field	Value
Publication number	US-10283366-B2
Application number	US-201615284231-A
Country	US
Kind code	B2
Filing date	Oct 3, 2016
Priority date	Oct 7, 2011
Publication date	May 7, 2019
Grant date	May 7, 2019

Abstract

A laser system includes a nonlinear optical (NLO) crystal, wherein the NLO crystal is annealed within a selected temperature range. The NLO crystal is passivated with at least one of hydrogen, deuterium, a hydrogen-containing compound or a deuterium-containing compound to a selected passivation level. The system further includes at least one light source, wherein at least one light source is configured to generate light of a selected wavelength and at least one light source is configured to transmit light through the NLO crystal. The system further includes a crystal housing unit configured to house the NLO crystal.

First claim

What is claimed:

1. A laser system comprising:
an annealed and passivated nonlinear optical (NLO) crystal comprising cesium lithium borate, the annealed and passivated NLO crystal annealed within a selected temperature range and passivated with at least one of hydrogen, deuterium, a hydrogen-containing compound or a deuterium-containing compound to a selected passivation level;
at least one light source configured to generate light of a selected wavelength, the light source further configured to transmit light through the NLO crystal, wherein the NLO crystal emits deep ultraviolet light in response to the light from the light source; and
a crystal housing unit configured to house the NLO crystal.

2. The system of claim 1 , wherein the at least one light source emits light at a first wavelength.

3. The system of claim 2 , wherein the NLO emits light at a second wavelength, wherein the second wavelength is approximately one-half the first wavelength.

4. The system of claim 1 , wherein the at least one light source comprises:
at least one laser having at least one diode pumped solid state (DPSS) source.

5. The system of claim 1 , wherein the at least one light source comprises:
at least one laser having at least one fiber IR source.

6. The system of claim 1 , wherein at least one of dangling bonds or broken bonds are repaired within the NLO crystal with the passivating gas.

7. The system of claim 1 , wherein the passivating gas comprises:
a mixture of hydrogen, deuterium and an inert gas.

8. The system of claim 1 , wherein the passivating gas comprises:
at least one inert gas mixed with at least one of hydrogen, deuterium, a hydrogen-containing compound or a deuterium-containing compound.

9. The system of claim 1 , wherein the NLO crystal is annealed at a temperature between room temperature and a melting point of the NLO crystal.

10. The system of claim 9 , wherein the NLO crystal is annealed at a temperature between 300° C. and 350° C.

11. The system of claim 1 , further comprising:
a set of beam shaping optics.

12. The system of claim 11 , wherein the set of beam shaping optics are configured to focus an output of the at least one light source into the NLO crystal.

13. The system of claim 12 , wherein the set of beam shaping optics are configured to focus the output of the at least one light source into an elliptical cross-section Gaussian beam waist within the NLO crystal.

14. The system of claim 11 , wherein the set of beam shaping optics comprise:
one or more anamorphic optics.

15. An apparatus comprising: a nonlinear optical crystal comprising cesium lithium borate, wherein the NLO crystal is annealed within a selected temperature range, the NLO crystal passivated with at least one of hydrogen, deuterium, a hydrogen-containing compound or a deuterium-containing compound to a selected passivation level, wherein the NLO crystal emits deep ultraviolet light in response to light from a light source.

Assignees

• Kla Tencor Corp

Inventors

• Chuang Yung-Ho
• Dribinski Vladimir

Classifications

• H10P36/00

  Gettering within semiconductor bodies · CPC title

• H10P95/94 Primary

  Hydrogenation or deuterisation, e.g. using atomic hydrogen from a plasma · CPC title

• G01N2021/3568

  applied to semiconductors, e.g. Silicon · CPC title

• G02F1/3501 Primary

  Constructional details or arrangements of non-linear optical devices, e.g. shape of non-linear crystals · CPC title

• G01N21/9501

  Semiconductor wafers (manufacturing processes per se of semiconductor devices implementing a measuring step H10P74/20) · CPC title