Passivation of nonlinear optical crystals

Patent metadata

Field	Value
Publication number	US-9459215-B2
Application number	US-201615010331-A
Country	US
Kind code	B2
Filing date	Jan 29, 2016
Priority date	Oct 7, 2011
Publication date	Oct 4, 2016
Grant date	Oct 4, 2016

Abstract

A system for optically inspection one or more samples includes a sample stage, a laser system configured for illuminating a portion of the surface of the one or more samples disposed on the sample stage, and a detector configured to receive at least a portion of illumination reflected from the surface of the sample. The laser system includes an NLO crystal annealed within a selected temperature range. In addition, the NLO crystal is passivated with at least one of hydrogen, deuterium, a hydrogen-containing compound or a deuterium-containing compound to a selected passivation level. Further, the laser system includes a light source configured to generate light of a selected wavelength. The light source is configured to transmit light through the NLO crystal. The laser system includes a crystal housing unit configured to house the NLO crystal.

First claim

What is claimed:

1. A system for optically inspecting one or more samples, comprising:
a sample stage;
a laser system configured for illuminating a portion of the surface of the one or more samples disposed on the sample stage; and
a detector configured to receive at least a portion of illumination reflected from the surface of the sample, wherein the laser system comprises:
an NLO crystal, the NLO crystal annealed within a selected temperature range, the NLO crystal passivated with at least one of hydrogen, deuterium, a hydrogen-containing compound or a deuterium-containing compound to a selected passivation level;
at least one light source configured to generate light of a selected wavelength, the light source further configured to transmit light through the NLO crystal; and
a crystal housing unit configured to house the NLO crystal.

2. The system of claim 1 , further comprising:
a computing system communicatively coupled to the detector, the computing system configured to acquire information regarding at least a portion of illumination received by the detector, the computing system further configured to determine the presence or absence of at least one defect of the sample utilizing information regarding at least a portion of illumination received by the detector.

3. The system of claim 1 , wherein the NLO crystal exhibits one or more absorption bands in at least one of IR, visible, or UV bands, wherein the intensity of the absorption band is a function of a number of OH bonds of the NLO crystal, the absorption band having an intensity at or above a selected level.

4. The system of claim 1 , wherein the laser emits light at one or more wavelengths within the range of 193 to 266 nm.

5. The system of claim 1 , wherein the laser system comprises at least one laser having at least one diode pumped solid state (DPSS) source.

6. The system of claim 1 , wherein the laser system comprises at least one laser having at least one fiber IR source.

7. The system of claim 1 , wherein the system is configured for dark-field inspection.

8. The system of claim 1 , wherein the system is configured for bright-field inspection.

9. The system of claim 1 , wherein the sample comprises an unpatterned wafer.

10. The system of claim 1 , wherein the sample comprises a patterned wafer.

11. The system of claim 1 , wherein the sample comprises at least one of a reticle or photomask.

12. The system of claim 1 , wherein the system further comprises:
one or more illumination optics configured to direct illumination from the laser system along an illumination path to the surface of the sample.

13. The system of claim 1 , wherein the system further comprises:
one or more collection optics configured to direct illumination reflected from the surface of the sample along a detection path to the detector.

14. The system of claim 1 , wherein a concentration of the at least one of hydrogen, deuterium, a hydrogen-containing compound and a deuterium-containing compound of the passivating gas is in a range of 5 to 10%.

15. The system of claim 1 , wherein the passivating gas comprises a mixture of hydrogen, deuterium and an inert gas.

16. The method of claim 1 , wherein the passivating gas includes at least one inert gas mixed with at least one of hydrogen, deuterium, a hydrogen-containing compound or a deuterium-containing compound.

17. The method of claim 1 , wherein the passivating gas is non-oxygenated.

18. The system of claim 1 , wherein the NLO crystal is annealed at a temperature between 300° and 350° C.

19. The system of claim 1 , wherein at least one of dangling bonds or broken bonds are repaired within the NLO crystal with the passivating gas.

20. The system of claim 1 , wherein the NLO crystal comprises:
at least one of Beta-Barium Borate (BBO), Lithium Triborate (LBO), Lithium Tetraborate (LTB), Cesium Lithium Borate (CLBO), or Cesium Borate (CBO).

21. A system for optically inspecting one or more samples, comprising:
a sample stage;
a laser system configured for illuminating a portion of the surface of the one or more samples disposed on the sample stage; and
a detector configured to receive at least a portion of illumination reflected from the surface of the sample, wherein the laser system comprises:
an NLO crystal, the NLO crystal passivated with at least one of hydrogen, deuterium, a hydrogen-containing compound or a deuterium-containing compound to a selected passivation level;
at least one light source configured to generate light of a selected wavelength, the light source further configured to transmit light through the NLO crystal; and
a crystal housing unit configured to house the NLO crystal.

22. A system for optically inspecting one or more samples, comprising:
a sample stage;
a laser system configured for illuminating a portion of the surface of the one or more samples disposed on the sample stage; and
a detector configured to receive at least a portion of illumination reflected from the surface of the sample, wherein the laser system comprises:
an NLO crystal, the NLO crystal having at least one of dangling bonds or broken bonds repaired with a passivating gas, the passivating gas including at least one of hydrogen, deuterium, a hydrogen-containing compound or a deuterium-containing compound;
at least one light source configured to generate light of a selected wavelength, the light source further configured to transmit light through the NLO crystal; and
a crystal housing unit configured to house the NLO crystal.

Assignees

• Kla Tencor Corp

Inventors

• Chuang Yung-Ho
• Dribinski Vladimir

Classifications

• H10P36/00

  Gettering within semiconductor bodies · CPC title

• H10P95/94 Primary

  Hydrogenation or deuterisation, e.g. using atomic hydrogen from a plasma · CPC title

• G01N2021/8822

  Dark field detection · CPC title

• G01N21/59

  Transmissivity (G01N21/25 takes precedence) · CPC title

• G02F1/353

  Frequency conversion, i.e. wherein a light beam is generated with frequency components different from those of the incident light beams · CPC title