Pulsed radiation sources for transmission pyrometry

Patent metadata

Field	Value
Publication number	US-10281335-B2
Application number	US-201715656662-A
Country	US
Kind code	B2
Filing date	Jul 21, 2017
Priority date	May 26, 2017
Publication date	May 7, 2019
Grant date	May 7, 2019

Abstract

Examples described herein generally relate to apparatus and methods for rapid thermal processing (RTP) of a substrate. The present disclosure discloses pulsed radiation sources, used to measure a broad range of low to high temperatures in the RTP chamber. In one example, two or more lasers, one of which emits pulses of radiation at 1,030 nm and one of which emits pulses of radiation at 1,080 nm, which measures temperatures below about 200° C., are used. In another example, two or more LEDs, one of which emits pulses of radiation at 1,030 nm and one of which emits pulses of radiation at 1,080 nm, are used. In yet another example, a broadband radiation source is used to emit pulses of radiation at least at 1,030 nm and 1,080 nm. These radiation sources are useful for detection of a broad range of low to high temperatures in the RTP chamber.

First claim

What is claimed is:

1. A thermal processing chamber comprising:
a chamber body;
a lamp assembly coupled to the chamber body;
a substrate support assembly coupled to the chamber body opposite the lamp assembly, the substrate support assembly defining a processing plane;
a pulsed radiation source coupled to the lamp assembly, the pulsed radiation source comprising:
a first laser operable to emit radiation at a first wavelength;
a second laser operable to emit radiation at a second wavelength; and
a third laser operable to emit radiation at a third wavelength, wherein the third wavelength is 1,120 nanometers;

a source manifold that couples the pulsed radiation source to the lamp assembly; and
a radiation detector optically coupled to the pulsed radiation source and disposed opposite from the pulsed radiation source across the processing plane.

2. The chamber of claim 1 , wherein the first wavelength is 1,030 nanometers, and wherein the second wavelength is 1,080 nanometers.

3. The chamber of claim 1 , wherein the source manifold comprises:
at least one fiber; and
a plurality of beam guides, the at least one fiber coupling the pulsed radiation source to the plurality of beam guides, each beam guide having a collimating end surface at a distal end thereof.

4. The chamber of claim 3 , wherein the lamp assembly comprises a plurality of lamps arranged in a honeycomb array.

5. The chamber of claim 4 , wherein each of the plurality of lamps is disposed in one of a plurality of tubes, the plurality of tubes having a plurality of interstitial spaces therebetween, and a plurality of openings, wherein each of the plurality of openings is disposed over one of the interstitial spaces, each of the openings having a diameter greater than or equal to a diameter of each of the plurality of beam guides.

6. The chamber of claim 1 , wherein the radiation detector comprises at least one of an indium gallium arsenide spectrometer and a silicon detector.

7. The chamber of claim 6 , wherein the indium gallium arsenide spectrometer comprises an indium gallium arsenide linear array with Near Infrared (NIR) Transmission grating.

8. The chamber of claim 1 , wherein the first laser operates at a nominal output of about 250 milliwatts.

9. The chamber of claim 1 , wherein the second laser operates at a nominal output of about 450 milliwatts.

10. A thermal processing chamber comprising:
a chamber body;
a lamp assembly coupled to the chamber body;
a substrate support assembly coupled to the chamber body opposite the lamp assembly, the substrate support assembly defining a processing plane;
a pulsed radiation source coupled to the lamp assembly, the pulsed radiation source comprising:
a first superluminescent diode operable to emit radiation at a first wavelength;
a second superluminescent diode operable to emit radiation at a second wavelength; and
a third superluminescent diode operable to emit radiation at a third wavelength of 1,120 nanometers;

a source manifold that couples the pulsed radiation source to the lamp assembly; and
a radiation detector optically coupled to the pulsed radiation source and disposed opposite from the pulsed radiation source across the processing plane.

11. The chamber of claim 10 , wherein the first wavelength is 1,030 nanometers, and wherein the second wavelength is 1,080 nanometers.

12. The chamber of claim 10 , wherein the radiation detector further comprises an indium gallium arsenide spectrometer.

13. The chamber of claim 12 , wherein the indium gallium arsenide spectrometer comprises an indium gallium arsenide linear array with Near Infrared (NIR) Transmission grating.

14. The chamber of claim 10 , wherein the source manifold further comprises:
at least one fiber; and
a plurality of beam guides, the at least one fiber coupling the pulsed radiation source to the plurality of beam guides, each beam guide having a collimating end surface at a distal end thereof.

15. The chamber of claim 14 , wherein the lamp assembly further comprises a plurality of lamps, each of the plurality of lamps being disposed in one of a plurality of tubes, the plurality of tubes having a plurality of interstitial spaces therebetween, and a plurality of openings, wherein each of the plurality of openings is disposed over one of the interstitial spaces, each of the openings having a diameter greater than or equal to a diameter of each of the plurality of beam guides.

Assignees

• Applied Materials Inc

Inventors

• Howells Samuel C

Classifications

• H10P72/0602

  Temperature monitoring · CPC title

• H10P72/0436

  mainly by radiation · CPC title

• G01J5/0896

  using a light source, e.g. for illuminating a surface · CPC title

• H01L21/67115

  Electricity · mapped topic

• H05B3/0047

  for semiconductor manufacture · CPC title