Ion-implanted, anti-reflective layer formed within sapphire material

Patent metadata

Field	Value
Publication number	US-10280504-B2
Application number	US-201615269899-A
Country	US
Kind code	B2
Filing date	Sep 19, 2016
Priority date	Sep 25, 2015
Publication date	May 7, 2019
Grant date	May 7, 2019

Abstract

A sapphire structure including an ion-implanted, anti-reflective layer and a method of forming an ion-implanted, anti-reflective layer within a sapphire component is disclosed. The method includes forming an ion-implanted layer in a sapphire material at a first depth, and annealing the sapphire material to a second depth. The second depth may be greater than or equal to the first depth. The ion-implanted layer may have a first index of refraction, and the sapphire material may have a second index of refraction different from the first index of refraction.

First claim

What is claimed is:

1. A method of forming an anti-reflective sapphire component comprising:
forming an ion-implanted layer in a sapphire material at a first depth, the sapphire material having a composition; and
annealing the sapphire material to a second depth that is greater than or equal to the first depth to form an annealed layer between an exterior surface of the sapphire material and the ion-implanted layer; wherein
the ion-implanted layer has a first index of refraction and a composition including an amount of implanted ions greater than an amount of implanted ions in the annealed layer; and
the annealed layer has a similar composition to the composition of the sapphire material, and the annealed layer has a second index of refraction different from the first index of refraction.

2. The method of claim 1 , wherein:
the first index of refraction is less than the second index of refraction; and
a portion of the sapphire material below the ion-implanted layer has the second index of refraction.

3. The method of claim 1 , wherein forming the ion-implanted layer comprises:
implanting a first group of ions within the sapphire material to form a first section of the ion-implanted layer; and
implanting a second group of ions within the sapphire material to form a second section of the ion-implanted layer; wherein
the second section of the ion-implanted layer is positioned adjacent the first section of the ion-implanted layer.

4. The method of claim 3 , wherein:
the second group of ions and the first group of ions are implanted at the first depth; and
the first group of ions substantially encircles the second group of ions.

5. The method of claim 1 , wherein forming the ion-implanted layer comprises:
implanting a first layer of ions below an exterior surface of the sapphire material; and
implanting a second layer of ions below the exterior surface of the sapphire material and above the first layer of ions, the second layer of ions distinct from the first layer of ions.

6. The method of claim 5 , further comprising:
annealing the sapphire material prior to implanting the second layer of ions, thereby forming an intermediate, annealed layer ultimately positioned between the first layer of ions and the second layer of ions.

7. The method of claim 6 , wherein annealing the sapphire material prior to implanting the second layer of ions comprises forming a top, annealed layer as the exterior surface of the sapphire material.

8. The method of claim 1 , wherein annealing the sapphire material comprises locally annealing a portion of the sapphire material.

9. The method of claim 1 , wherein annealing the sapphire material comprises forming a transition portion within the sapphire material that extends into the ion-implanted layer.

10. The method of claim 1 , wherein the ion-implanted layer is formed at a thickness that is less than the first depth.

11. The method of claim 1 , wherein:
the ion-implanted layer is formed at a thickness within the sapphire material and defines an upper interface and a lower interface;
the thickness of the ion-implanted layer is configured to induce a quarter-wavelength phase shift between a first portion of light reflecting from the upper interface and a second portion of light reflecting from the lower interface.

12. A sapphire component comprising:
an internal layer having a composition;
an ion-implanted layer formed between the internal layer and an exterior surface of the sapphire component, the ion-implanted layer having a first index of refraction and a composition including an amount of implanted ions greater than an amount of implanted ions in the internal layer; and
an annealed layer between the exterior surface and the ion-implanted layer, the annealed layer having a composition substantially similar to the composition of the internal layer and a second index of refraction that is different than the first index of refraction.

13. The sapphire component of claim 12 , wherein the first index of refraction is lower than the second index of refraction.

14. The sapphire component of claim 12 , wherein a thickness of the annealed layer is less than approximately 1 micron.

15. An electronic device comprising:
a housing;
a display module positioned within the housing; and
a sapphire cover coupled to the housing and positioned over the display module, the sapphire cover comprising:
an internal layer having a composition;
an ion-implanted layer formed within the sapphire cover above the internal layer and having a first index of refraction and a composition including an amount of implanted ions greater than an amount of implanted ions in the internal layer; and
an annealed layer positioned above the ion-implanted layer and forming an exterior surface of the sapphire cover, the annealed layer having a second index of refraction different than the first index of refraction and a composition substantially similar to the composition of the internal layer.

16. The electronic device of claim 15 , wherein the ion-implanted layer comprises:
a first section comprising a first group of ions implanted in the first section; and
a second section positioned adjacent the first section, the second section comprising a second group of ions implanted in the second section; wherein
the first group of ions is distinct from the second group of ions.

17. The electronic device of claim 15 , wherein:
the ion-implanted layer is a first ion-implanted layer; and
a second ion-implanted layer is positioned between the exterior surface and the first ion-implanted layer.

18. The electronic device of claim 17 , wherein:
the first ion-implanted layer is separated from the second ion-implanted layer by an intermediate annealed layer; and
the second ion-implanted layer is positioned between the intermediate annealed layer and a top annealed layer.

19. The electronic device of claim 18 , wherein the intermediate annealed layer is compositionally similar to the annealed layer.

Assignees

• Apple Inc

Inventors

• Rogers Matthew S
• Yuen Avery P
• Zhao Xianwei

Classifications

• C04B41/00

  After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone (conditioning of the materials prior to shaping C04B40/00; applying liquids or other fluent materials to surfaces, in general B05; grinding or polishing B24; apparatus or processes for treating or working shaped articles of clay or other ceramic compositions, slag or mixtures containing cementitious material B28B11/00; working stone or stone-like materials B28D; glazes, other than cold glazes, C03C8/00; etching, surface-brightening or pickling compositions C09K13/00) · CPC title

• C23C14/48 Primary

  Ion implantation · CPC title

• C23C14/081

  of aluminium, magnesium or beryllium · CPC title