Device and method for bonding substrates

Patent metadata

Field	Value
Publication number	US-10279575-B2
Application number	US-201314419664-A
Country	US
Kind code	B2
Filing date	May 29, 2013
Priority date	May 29, 2013
Publication date	May 7, 2019
Grant date	May 7, 2019

Abstract

A method for bonding a contact surface of a first substrate to a contact surface of a second substrate comprising of the steps of: positioning the first substrate on a first receiving surface of a first receiving apparatus and positioning the second substrate on a second receiving surface of a second receiving apparatus; establishing contact of the contact surfaces at a bond initiation site; and bonding the first substrate to the second substrate along a bonding wave which is travelling from the bond initiation site to the side edges of the substrates, wherein the first substrate and/or the second substrate is/are deformed for alignment of the contact surfaces.

First claim

Having described the invention, the following is claimed:

1. A method for bonding of a contact surface of a first substrate to a contact surface of a second substrate, comprising the following steps:
fixing the first substrate on a receiving surface of a concave or convex lower receiving apparatus and the second substrate on a receiving surface of an upper receiving apparatus;
deforming at least one of the first substrate and the second substrate to align the contact surfaces of the substrates with each other outside of a bond initiation site;
establishing contact between the contact surfaces at the bond initiation site; and
dropping the fixed second substrate from the receiving surface of the upper receiving apparatus onto the first substrate that is fixed on the receiving surface of the concave or convex lower receiving apparatus to bond the first substrate to the second substrate along a bonding wave that travels from the bond initiation site to side edges of the substrates and displaces a gas cushion on which the dropped second substrate lies during the bonding,
wherein a front of the bonding wave travels in an approximately horizontal plane.

2. The method as claimed in claim 1 , wherein the at least one of the first substrate and the second substrate is deformed in an amount that varies depending on factors that influence the traveling of the bonding wave.

3. The method as claimed in claim 1 , wherein the bond initiation site is located in a center of the contact surfaces.

4. The method as claimed in claim 1 , wherein the at least one of the first substrate and the second substrate is deformed in at least one of a lateral direction, convexly, and concavely.

5. The method as claimed in claim 1 , wherein the at least one of the first substrate and the second substrate is deformed by expansion or compression or curving of the at least one of the first substrate and of the second substrate.

6. The method as claimed in claim 1 , wherein diameters (d 1 , d 2 ) of the substrates deviate from one another by less than 5 mm.

7. The method as claimed in claim 1 , wherein the at least one of the first substrate and the second substrate is deformed by at least one of mechanical actuation means and temperature control of at least one of the lower receiving apparatus and the upper receiving apparatus.

8. The method as claimed in claim 1 , wherein the at least one of the first substrate and the second substrate is fixed solely in a region of side edges on at least one of the receiving surface of the lower receiving apparatus and the receiving surface of the upper receiving apparatus.

9. A method for bonding of a contact surface of a first substrate to a contact surface of a second substrate, comprising the following steps:
fixing the first substrate on a receiving surface of a concave or convex lower receiving apparatus and the second substrate on a receiving surface of an upper receiving apparatus, the receiving surface of the lower receiving apparatus being adjustable to allow a gravitational field acting in a normal direction to the receiving surface of the lower receiving apparatus to correct a radial asymmetry of the first substrate;
deforming at least one of the first substrate and the second substrate to align the contact surfaces of the substrates with each other outside of a bond initiation site;
establishing contact between the contact surfaces at the bond initiation site; and
dropping the fixed second substrate from the receiving surface of the upper receiving apparatus onto the first substrate that is fixed on the receiving surface of the concave or convex lower receiving apparatus to bond the first substrate to the second substrate along a bonding wave that travels from the bond initiation site to side edges of the substrates and displaces a gas cushion on which the dropped second substrate lies during the bonding.

Assignees

• Ev Group E Thallner Gmbh

Inventors

• Wagenleitner Thomas
• Wimplinger Markus
• Lindner Friedrich Paul
• Plach Thomas
• Kurz Florian

Classifications

• H10P72/0428

  Apparatus for mechanical treatment or grinding or cutting · CPC title

• H10P72/70

  for supporting or gripping · CPC title

• H10P10/128 Primary

  by direct semiconductor to semiconductor bonding · CPC title

• H10W72/0198

  batch processes · CPC title

• H10W72/07141

  Means for applying energy, e.g. ovens or lasers · CPC title