Method for forming semiconductor device structure

Patent metadata

Field	Value
Publication number	US-10276469-B2
Application number	US-201514689210-A
Country	US
Kind code	B2
Filing date	Apr 17, 2015
Priority date	Apr 17, 2015
Publication date	Apr 30, 2019
Grant date	Apr 30, 2019

Abstract

A method for forming a semiconductor device structure is provided. The method includes performing a first process over a surface of a semiconductor substrate. The method includes forming a protective layer over the surface of the semiconductor substrate in a first chamber after the first process. The method includes performing a first transferring process to transfer the semiconductor substrate from the first chamber into a substrate carrier. The method includes performing a second transferring process to transfer the semiconductor substrate from the substrate carrier into a second chamber. The semiconductor substrate is located in the substrate carrier during a substantially entire first time interval between the first transferring process and the second transferring process. The method includes removing the substantially entire protective layer in the second chamber. The method includes performing a second process over the surface of the semiconductor substrate.

First claim

What is claimed is:

1. A method for forming a semiconductor device structure, comprising:
performing a first process over a first top surface of a semiconductor substrate in a first chamber, wherein the first chamber is a plasma chamber;
after the first process, forming a protective layer over the first top surface and a first sidewall of the semiconductor substrate, wherein the first process and the forming of the protective layer are both performed in the first chamber, the protective layer comprises a first film and a second film, and the first film and the second film are made of different materials;
performing a first transferring process to transfer the semiconductor substrate from the first chamber into a substrate carrier;
performing a second transferring process to transfer the semiconductor substrate from the substrate carrier into a second chamber, wherein the semiconductor substrate is located in the substrate carrier during an entire first time interval between the first transferring process and the second transferring process;
removing the protective layer in the second chamber; and
after the removal of the protective layer, performing a second process over the first top surface of the semiconductor substrate.

2. The method for forming a semiconductor device structure as claimed in claim 1 , wherein the protective layer is an outermost layer of the semiconductor device structure during an entire second time interval between the formation of the protective layer and the removal of the protective layer.

3. The method for forming a semiconductor device structure as claimed in claim 1 , wherein the first process comprises a plasma etching process, and the protective layer is formed using a plasma deposition process.

4. The method for forming a semiconductor device structure as claimed in claim 1 , wherein the first film is between the semiconductor substrate and the second film, and the first film is made of a porous material containing carbon.

5. The method for forming a semiconductor device structure as claimed in claim 1 , wherein the first process comprises a first plasma deposition process, and the protective layer is formed using a second plasma deposition process.

6. The method for forming a semiconductor device structure as claimed in claim 1 , wherein the second process is performed in the second chamber.

7. The method for forming a semiconductor device structure as claimed in claim 1 , wherein the first process comprises:
performing a first plasma deposition process over the semiconductor substrate to form a film over the semiconductor substrate; and
the formation of the protective layer comprises:
performing a second plasma deposition process over the film to form the protective layer covering a second top surface and second sidewalls of the film.

8. A method for forming a semiconductor device structure, comprising:
performing a first process over a top surface of a semiconductor substrate;
after the first process, forming a protective layer over the top surface and a sidewall of the semiconductor substrate in a first chamber, wherein the protective layer has a first film and a second film, and materials of the first film and the second film are different;
after a queue time, removing the protective layer in a second chamber, wherein before the removal of the protective layer, the protective layer is an outermost layer of the semiconductor device structure, and the second chamber is a plasma chamber; and
after the removal of the protective layer, performing a second process over the top surface of the semiconductor substrate in the second chamber.

9. The method for forming a semiconductor device structure as claimed in claim 8 , wherein the protective layer is removed using a plasma etching process.

10. The method for forming a semiconductor device structure as claimed in claim 8 , wherein the protective layer is a planar layer.

11. The method for forming a semiconductor device structure as claimed in claim 8 , wherein the first chamber and the second chamber are a same chamber.

12. The method for forming a semiconductor device structure as claimed in claim 8 , wherein the first film is between the second film and the semiconductor substrate, and the first film comprises a porous material.

13. The method for forming a semiconductor device structure as claimed in claim 8 , wherein the formation of the protective layer comprises:
performing a deposition process over the semiconductor substrate to form the protective layer.

14. A method for forming a semiconductor device structure, comprising:
forming a feature structure in a semiconductor substrate;
forming a protective layer over the feature structure and a top surface and a sidewall of the semiconductor substrate in a first chamber, wherein the feature structure comprises a patterned recess, the protective layer has a first film and a second film, materials of the first film and the second film are different, and the protective layer conformally covers inner walls and a bottom surface of the patterned recess;
performing a first transferring process to transfer the semiconductor substrate from the first chamber into a substrate carrier;
performing a second transferring process to transfer the semiconductor substrate from the substrate carrier into a second chamber, wherein the semiconductor substrate is located in the substrate carrier during an entire first time interval between the first transferring process and the second transferring process;
removing the protective layer in the second chamber, wherein the first chamber and the second chamber are a same plasma chamber; and
after the removal of the protective layer, performing a second process over the semiconductor substrate and the feature structure.

15. The method for forming a semiconductor device structure as claimed in claim 14 , wherein the formation of the patterned recess and the protective layer comprises:
performing a plasma etching process over the semiconductor substrate to form the patterned recess in the semiconductor substrate; and
performing a plasma deposition process over the semiconductor substrate to form the protective layer covering the patterned recess.

16. The method for forming a semiconductor device structure as claimed in claim 15 , wherein the formation of the feature structure comprises:
forming the feature structure in the semiconductor substrate in the first chamber.

17. The method for forming a semiconductor device structure as claimed in claim 14 , wherein the second process is performed in the second chamber.

18. The method for forming a semiconductor device structure as claimed in claim 1 , wherein the protective layer is removed using a plasma etching process, and the second chamber is a plasma chamber.

19. The method for forming a semiconductor device structure as claimed in claim 18 , wherein the second process is performed in the second chamber.

20. The method for forming a semiconductor device structure as claimed in claim 8 , wherein the first film comprises a carbon material.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Yu Weibo
• Chuang Jui-Ping
• Lu Chen-Hsiang
• Ku Shao-Yen

Classifications

• H10P90/126

  by chemical etching · CPC title

• H10P72/32

  between different workstations · CPC title

• H10P70/23

  during, before or after processing of insulating materials · CPC title

• H10P70/20 Primary

  Cleaning during device manufacture · CPC title

• H10P14/6326

  Deposition processes · CPC title