Method for manufacturing microelectromechanical system structure having a cavity and through-holes of different widths

Patent metadata

Field	Value
Publication number	US-10273152-B2
Application number	US-201815884919-A
Country	US
Kind code	B2
Filing date	Jan 31, 2018
Priority date	Sep 27, 2017
Publication date	Apr 30, 2019
Grant date	Apr 30, 2019

Abstract

Methods for manufacturing MEMS structures are provided. The method includes forming a first trench and a second trench in a MEMS substrate by performing a main etching process and etching the MEMS substrate through the first trench and the second trench to form a first through hole and an extended second trench by performing a first step of an over-etching process. The method further includes etching the MEMS substrate through the extended second trench to form a second through hole by performing a second step of the over-etching process. In addition, a width of the first trench is greater than a width of the second trench, and a height of the first trench is greater than ¾ of a height of the MEMS substrate, and a height of the second trench is smaller than ⅔ of the MEMS substrate.

First claim

What is claimed is:

1. A method for manufacturing a microelectromechanical system (MEMS) structure, comprising:
forming a first trench and a second trench in a MEMS substrate by performing a main etching process;
etching the MEMS substrate through the first trench and the second trench to form a first through hole and an extended second trench by performing a first step of an over-etching process; and
etching the MEMS substrate through the extended second trench to form a second through hole by performing a second step of the over-etching process,
wherein a width of the first trench is greater than a width of the second trench, and a height of the first trench is greater than ¾ of a height of the MEMS substrate, and a height of the second trench is smaller than ⅔ of the height of the MEMS substrate.

2. The method for manufacturing a microelectromechanical system structure as claimed in claim 1 , wherein a difference between the width of the first trench and the width of the second trench is in a range from about 0.5 μm to about 2 μm.

3. The method for manufacturing a microelectromechanical system structure as claimed in claim 1 , further comprising
forming a movable element between the first through hole and the second through hole.

4. The method for manufacturing a microelectromechanical system structure as claimed in claim 1 , wherein the width of the first trench is in a range from about 1.8 μm to about 2.5 μm, and the width of the second trench is in a range from about 0.5 μm to about 1.5 μm.

5. The method for manufacturing a microelectromechanical system structure as claimed in claim 4 , wherein the width of the second trench is in a range from about 0.5 μm to about 1.5 μm.

6. The method for manufacturing a microelectromechanical system structure as claimed in claim 1 , wherein a ratio of an etching rate in the second step of the over-etching process to an etching rate in the first step of the over-etching process is in a range from about 1.4 to about 1.8.

7. The method for manufacturing a microelectromechanical system structure as claimed in claim 1 , further comprising:
disposing the MEMS substrate over a semiconductor substrate; and
disposing a cap substrate over the MEM substrate,
wherein the first through hole and the second through hole are located over a recess of the semiconductor substrate.

8. A method for manufacturing a microelectromechanical system (MEMS) structure, comprising:
disposing a MEMS substrate over a semiconductor substrate, wherein the MEMS substrate comprises a first region and a second region over a recess of the semiconductor substrate;
removing a top portion of the first region and a top portion of the second region of the MEMS substrate by performing a main etching process;
removing a bottom portion of the first region and a middle portion of the second region by performing a first step of an over-etching process, thereby etching through the first region of the MEMS substrate to form a first through hole; and
removing a bottom portion of the second region by performing a second step of the over-etching process, thereby etching through the second region of the MEMS substrate to form a second through hole,
wherein a width of the first region is greater than a width of the second region, and a ratio of an etching rate of the bottom portion of the second region in the second step of the over-etching process to an etching rate of the middle portion of the second region in the first step of the over-etching process is in a range from about 1.4 to about 1.8.

9. The method for manufacturing a microelectromechanical system structure as claimed in claim 8 , wherein a difference between the width of the first region and the width of the second region is in a range from about 0.5 μm to about 2 μm.

10. The method for manufacturing a microelectromechanical system structure as claimed in claim 8 , wherein the top portion, the middle portion, and the bottom portion of the second region have the same width and are made of the same material.

11. The method for manufacturing a microelectromechanical system structure as claimed in claim 8 , wherein a height of the top portion of the first region is greater than ¾ of a height of the first region, and a height of the top portion of the second region is smaller than ⅔ of a height of the second region.

12. The method for manufacturing a microelectromechanical system structure as claimed in claim 11 , wherein a height of the top portion of the second region is smaller than ⅔ of a height of the second region.

13. The method for manufacturing a microelectromechanical system structure as claimed in claim 8 , wherein the first region and the second region are made of the same material.

14. The method for manufacturing a microelectromechanical system structure as claimed in claim 8 , further comprising
forming a movable element in the MEMS substrate between the first through hole and the second through hole.

15. The method for manufacturing a microelectromechanical system structure as claimed in claim 14 , wherein an etching gas used in the first step of the over-etching process is the same as an etching gas used in the second step of the over-etching process, and a flow rate of the etching gas used in the first step of the over-etching process is also the same as a flow rate of the etching gas used in the second step of the over-etching process.

16. The method for manufacturing a microelectromechanical system structure as claimed in claim 8 , further comprising:
disposing a cap substrate over the MEM substrate.

17. A method for manufacturing a microelectromechanical system (MEMS) structure, comprising:
etching a top portion of a first region of a MEMS substrate to form a first trench and a top portion of a second region of the MEMS substrate to form a second trench;
etching a bottom portion of the first region through the first trench to form a first through hole and a middle portion of the second region through the second trench to form an extended second trench by performing a first step of an over-etching process;
etching a bottom portion of the second region through the extended second trench to form a second through hole by performing a second step of the over-etching process,
wherein a first width of the first region is greater than a width of the second region, a difference between the first width of the first region and the second width of the second region is in a range from about 0.5 μm to about 2 μm, and an ratio of an etching rate of the bottom portion of the second region to an etching rate of the middle portion of the second region is greater than about 1.1.

18. The method for manufacturing a microelectromechanical system structure as claimed in claim 17 , wherein a height of the first trench is greater than ¾ of a height of the MEMS substrate, and a height of the second trench is smaller than ⅔ of the MEMS substrate.

19. The method for manufacturing a microelectromechanical system structure as claimed in claim 17 , further comprising
forming a movable element between the first through hole and the second through hole.

20. The method for manufacturing a microelectromechanical system structure as claimed in claim 17 , wherein the first width of the first region is in a range from about 1.8 μm to about 2.5 μm, and the second width of the second region is in a range from about 0.5 μm to about 1.5 μm.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Meng Chin-Han
• Chen Jr-Sheng
• Hsu Chih-Hsien
• Chiang Yu-Pei
• Huang Lin-Ching

Classifications

• B81C1/00198

  comprising elements which are movable in relation to each other, e.g. comprising slidable or rotatable elements · CPC title

• B81C2201/013

  Etching · CPC title

• B81C1/00087

  Holes · CPC title

• B81C1/00063 Primary

  Trenches · CPC title

• B81C1/00587 Primary

  Processes for avoiding or controlling over-etching not provided for in B81C1/00571 - B81C1/00579 · CPC title