Tantalum sputtering target
US-9085819-B2 · Jul 21, 2015 · US
Tantalum sputtering target
US10266924B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10266924-B2 |
| Application number | US-201013142427-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 23, 2010 |
| Priority date | May 22, 2009 |
| Publication date | Apr 23, 2019 |
| Grant date | Apr 23, 2019 |
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- Title
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Abstract
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Provided is a tantalum sputtering target containing 1 mass ppm or more and 100 mass ppm or less of niobium as an essential component, and having a purity of 99.999% or more excluding niobium and gas components. Thereby obtained is a high purity tantalum sputtering target comprising a uniform and fine structure and which yields stable plasma and superior film evenness (uniformity).
First claim
Opening claim text (preview).
The invention claimed is: 1. A tantalum sputtering target containing 50 mass ppm or more and 100 mass ppm or less of niobium as an essential component, having a purity of 99.999 mass % or more excluding niobium and gas components, having an average crystal grain size of 100 μm or less, having a variation of niobium content in the target of ±20% or less, and having a variation of average crystal grain size of ±20% or less. 2. The tantalum sputtering target according to claim 1 , wherein the variation of the niobium content in the target is +6% to ±10%. 3. The tantalum sputtering target according to claim 1 , wherein the average crystal grain size of the target is 40 to 50 μm. 4. The tantalum sputtering target according to claim 3 , wherein the variation of the average crystal grain size is +5% to ±8%.
Assignees
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Classifications
Alloys based on vanadium, niobium, or tantalum · CPC title
Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy · CPC title
- C22C27/00Primary
Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00 · CPC title
- C23C14/34Primary
Sputtering · CPC title
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Frequently asked questions
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- What does patent US10266924B2 cover?
- Provided is a tantalum sputtering target containing 1 mass ppm or more and 100 mass ppm or less of niobium as an essential component, and having a purity of 99.999% or more excluding niobium and gas components. Thereby obtained is a high purity tantalum sputtering target comprising a uniform and fine structure and which yields stable plasma and superior film evenness (uniformity).
- Who is the assignee on this patent?
- Fukushima Atsushi, Oda Kunihiro, Jx Nippon Mining & Metals Corp
- What technology area does this patent fall under?
- Primary CPC classification C22C27/00. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Apr 23 2019 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 2 related publications on this page (citations in our corpus or others sharing the same primary CPC).