Member for solid-state image pickup device and method for manufacturing solid-state image pickup device

Patent metadata

Field	Value
Publication number	US-10263034-B2
Application number	US-201715612978-A
Country	US
Kind code	B2
Filing date	Jun 2, 2017
Priority date	Jul 9, 2010
Publication date	Apr 16, 2019
Grant date	Apr 16, 2019

Abstract

A member for a solid-state image pickup device having a bonding plane with no gaps and a method for manufacturing the same are provided. The manufacturing method includes the steps of providing a first substrate provided with a photoelectric converter on its primary face and a first wiring structure, providing a second substrate provided with a part of a peripheral circuit on its primary face and a second wiring structure, and performing bonding so that the first substrate, the first wiring structure, the second wiring structure, and the second substrate are disposed in this order. In addition, at least one of an upper face of the first wiring structure and an upper face of the second wiring structure has a concave portion, and a conductive material forms a bottom face of the concave portion.

First claim

The invention claimed is:

1. A method for manufacturing a device, comprising:
providing a first member which includes a first substrate and a first structure on the first substrate;
providing a second member which includes a second substrate and a second structure on the second substrate;
bonding the first member and the second member so that the first structure and the second structure are disposed between the first substrate and the second substrate,
wherein the first structure includes a first insulating film having a groove, includes a first portion containing copper in the groove of the first insulating film and includes a first film of barrier metal between the first portion and the first insulating film,
wherein the second structure includes a second insulating film having a groove, includes a second portion containing copper in the groove of the second insulating film and includes a second film of barrier metal between the second portion and the second insulating film,
wherein the bonding includes a first step and a second step after the first step,
wherein in the first step, the first insulating film and the second insulating film are bonded together whereas at least a first part of the first portion and at least a second part of the second portion face each other with a gap between the first part and the second part, and
wherein in the second step, the first part and the second part are bonded together.

2. The method according to claim 1 , wherein in the first step, a distance between the first part and the second part is larger than a distance between the first insulating film and the second film and/or a distance between the first film and the second insulating film.

3. The method according to claim 1 , wherein in the first step, a distance between the first part and the second part is larger than a distance between the first film and the second film.

4. The method according to claim 1 , wherein in the first step, a distance between the first part and the second part is smaller than a distance between the first film and the second film.

5. The method according to claim 1 , wherein in the first step, a distance between the first insulating film and the second portion is larger than a distance between the first film and the second insulating film.

6. The method according to claim 1 , wherein in the first step, a distance between the first film and the second film is smaller than a distance between the first insulating film and the second portion and/or a distance between the first portion and the second insulating film.

7. The method according to claim 1 , wherein the first insulating film includes a silicon oxide film and/or a silicon nitride film, the second insulating film includes a silicon oxide film and/or a silicon nitride film, the first film contains tantalum and/or titanium, and the second film contains tantalum and/or titanium.

8. The method according to claim 1 , wherein the first substrate includes a silicon semiconductor substrate, and the second substrate includes a silicon semiconductor substrate.

9. The method according to claim 8 , wherein the first substrate is provided with a first transistor, and the second substrate is provided with a second transistor.

10. The method according to claim 1 , wherein before the bonding, a plasma irradiation is performed on an upper face of the second structure.

11. The method according to claim 10 , wherein the plasma irradiation is performed in a gas atmosphere of oxygen.

12. The method according to claim 10 , wherein the plasma irradiation is performed in a gas atmosphere of nitrogen.

13. The method according to claim 1 , wherein before the bonding, an upper face of the first structure has a first concave portion so that the first portion forms a bottom face of the first concave portion, and an upper face of the second structure has a second concave portion so that the second portion forms a bottom face of the second concave portion.

14. The method according to claim 1 , wherein before the bonding, a chemical treatment is performed on an upper face of the second structure.

15. The method according to claim 1 , wherein in the bonding, a heat treatment is performed.

16. The method according to claim 15 , wherein the bonding is performed in a vacuum or an inert gas atmosphere.

17. The method according to claim 9 , wherein after the bonding, a thickness of the first substrate is reduced.

18. The method according to claim 17 , wherein after the bonding, an opening is formed in the first substrate.

19. The method according to claim 18 , wherein after the bonding, a thickness of the second substrate is reduced.

20. The method according to claim 9 , wherein the first substrate is provided with a photoelectric converter.

Assignees

• Canon Kk

Inventors

• Endo Nobuyuki
• Itano Tetsuya
• Yamazaki Kazuo
• Watanabe Kyouhei
• Iwata Junji

Classifications

• H10W80/312

  characterised by the direct bonding of electrically conductive pads · CPC title

• H10W80/035

  by heating, e.g. melting or causing diffusion · CPC title

• H10W72/01951

  Changing the shapes of bond pads · CPC title

• H10W72/952

  comprising metals or metalloids, e.g. PbSn, Ag or Cu · CPC title

• H10W80/327

  characterised by the direct bonding of insulating parts, e.g. of silicon oxide layers · CPC title