Method for forming separation starting point and separation method

Patent metadata

Field	Value
Publication number	US-10259207-B2
Application number	US-201715413696-A
Country	US
Kind code	B2
Filing date	Jan 24, 2017
Priority date	Jan 26, 2016
Publication date	Apr 16, 2019
Grant date	Apr 16, 2019

Abstract

A starting point for separating a separation layer and a layer to be separated is formed in a process member. A first step of irradiating a first portion of the process member with first laser light in a frame-like shape and a second step of irradiating at least part of a region which is irradiated with the first laser light with second laser light are performed. The process member includes a first substrate, the separation layer, the layer to be separated, and an adhesive layer which are stacked in this order. In the first portion, the adhesive layer overlaps with the first substrate with the separation layer and the layer to be separated provided therebetween. In the first step, the first laser light is absorbed by at least the layer to be separated and the adhesive layer. In the second step, the second laser light is absorbed by at least the separation layer.

First claim

What is claimed is:

1. A method for forming a separation starting point, comprising:
a first step of irradiating a first portion of a process member with first laser light in a frame-like shape; and
a second step of irradiating a second portion of the process member with second laser light,
wherein the first portion and the second portion at least partly overlap with each other,
wherein the process member comprises a first substrate, a separation layer, a layer to be separated, and an adhesive layer which are stacked in this order,
wherein in the first portion, the adhesive layer overlaps with the first substrate with the separation layer and the layer to be separated provided between the adhesive layer and the first substrate,
wherein in the first step, the first laser light is absorbed by at least the layer to be separated and the adhesive layer,
wherein in the second step, the second laser light is absorbed by at least the separation layer, and
wherein a width of the second portion which is irradiated with the second laser light is larger than a width of the first portion which is irradiated with the first laser light.

2. The method for forming a separation starting point according to claim 1 ,
wherein the first laser light is ultraviolet light, and
wherein the second laser light is visible light.

3. The method for forming a separation starting point according to claim 1 , wherein in the first step, the layer to be separated and the adhesive layer are cut.

4. The method for forming a separation starting point according to claim 1 , wherein in the second step, at least part of the separation layer is separated from the layer to be separated.

5. The method for forming a separation starting point according to claim 1 , wherein the irradiation with the first laser light and the irradiation with the second laser light are performed from the adhesive layer side to the first substrate side.

6. The method for forming a separation starting point according to claim 1 , wherein the second step is performed after the first step.

7. The method for forming a separation starting point according to claim 1 , wherein the first step is performed after the second step.

8. The method for forming a separation starting point according to claim 1 ,
wherein the process member further comprises a second substrate,
wherein the second substrate and the layer to be separated are attached to each other with the adhesive layer, and
wherein in the first step, the first laser light is absorbed by at least the second substrate, the layer to be separated, and the adhesive layer.

9. The method for forming a separation starting point according to claim 1 , wherein the separation layer comprises tungsten.

10. A separation method comprising the steps of:
forming the separation layer over the first substrate,
forming the layer to be separated over and in contact with the separation layer,
forming the adhesive layer over the separation layer and the layer to be separated and curing the adhesive layer,
forming a separation starting point by the method for forming a separation starting point according to claim 1 , and
separating the layer to be separated from the separation layer from the separation starting point.

11. A method for manufacturing a device comprising the steps of:
irradiating a first portion of a process member with first laser light in a frame-like shape; and
irradiating a second portion of the process member with second laser light,
wherein a frame-like shaped region which is irradiated with the first laser light comprises at least four sides,
wherein the second portion overlaps with an entire one side of the frame-like shaped region,
wherein the process member comprises a separation layer, a layer to be separated, and an adhesive layer which are stacked in this order,
wherein in the first portion, the adhesive layer overlaps with the separation layer with the layer to be separated provided between the adhesive layer and the separation layer,
wherein the first laser light and the second laser light have different wavelengths,
wherein the layer to be separated and the adhesive layer are cut by the irradiation with the first laser light, and
wherein at least part of the separation layer is separated from the layer to be separated by the irradiation with the second laser light.

12. The method for manufacturing a device according to claim 11 ,
wherein the first laser light is ultraviolet light, and
wherein the second laser light is visible light.

13. The method for manufacturing a device according to claim 11 , wherein the irradiation with the first laser light and the irradiation with the second laser light are performed from the same surface side.

14. The method for manufacturing a device according to claim 11 , wherein the irradiation with the first laser light and the irradiation with the second laser light are performed from the adhesive layer side to the separation layer side.

15. The method for manufacturing a device according to claim 11 , wherein the irradiation with the second laser light is performed after the irradiation with the first laser light.

16. The method for manufacturing a device according to claim 11 , wherein the irradiation with the first laser light is performed after the irradiation with the second laser light.

17. The method for manufacturing a device according to claim 11 , wherein the separation layer comprises tungsten.

18. A method for manufacturing a device comprising the steps of:
irradiating a first portion of a process member with first laser light in a frame-like shape; and
irradiating a second portion of the process member with second laser light,
wherein a frame-like shaped region which is irradiated with the first laser light comprises at least four sides,
wherein the second portion overlaps with an entire one side of the frame-like shaped region,
wherein the process member comprises a first substrate, a separation layer, a layer to be separated, and an adhesive layer which are stacked in this order,
wherein in the first portion, the adhesive layer overlaps with the first substrate with the separation layer and the layer to be separated provided between the adhesive layer and the first substrate,
wherein the first laser light is absorbed by at least the layer to be separated and the adhesive layer, and
wherein the second laser light is absorbed by at least the separation layer.

19. The method for manufacturing a device according to claim 18 , wherein at least one of the sides comprising the frame-like shaped region is not parallel to three sides of the process member.

20. The method for manufacturing a device according to claim 18 ,
wherein the first laser light is ultraviolet light, and
wherein the second laser light is visible light.

21. The method for manufacturing a device according to claim 18 , wherein the separation layer comprises tungsten.

Assignees

• Semiconductor Energy Lab

Inventors

• Ohno Masakatsu
• Takeshima Koichi

Classifications

• H10P72/7432

  used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate · CPC title

• H10P72/7426

  used as a support during build up manufacturing of active devices · CPC title

• H10P72/7412

  the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support · CPC title

• H10P72/744

  Details of chemical or physical process used for separating the auxiliary support from a device or a wafer · CPC title

• H10P72/74

  using temporarily an auxiliary support · CPC title